PACS numbers

61.72.Tt Doping and impurity implantation in germanium and silicon
  1. A.R. Chelyadinskii, F.F. Komarov “Defect-impurity engineering in implanted silicon46 789–820 (2003)
    61.72.Cc, 61.72.Tt, 61.72.Yx (all)
  2. V.G. Plekhanov “Isotope engineering43 1147–1154 (2000)
    42.70.Hj, 42.81.Qb, 61.72.Tt, 66.30.Hs (all)
  3. B.N. Mukashev, Kh.A. Abdullin, Yu.V. Gorelkinskii “Metastable and bistable defects in silicon43 139–150 (2000)
    61.72.−y, 61.72.Tt, 61.80.−x, 71.55.−i (all)
  4. B.A. Volkov “Semiconductor encyclopedia—once again31 384–384 (1988)
    01.30.Kj, 61.72.Tt, 61.72.Vv, 72.20.−i, 61.66.Fn (all)
© 1918–2017 Uspekhi Fizicheskikh Nauk
Email: ufn@ufn.ru Editorial office contacts About the journal Terms and conditions