PACS numbers

61.72.Tt Doping and impurity implantation in germanium and silicon
  1. A.R. Chelyadinskii, F.F. Komarov “Defect-impurity engineering in implanted siliconPhys. Usp. 46 789–820 (2003)
    61.72.Cc, 61.72.Tt, 61.72.Yx (all)
  2. V.G. Plekhanov “Isotope engineeringPhys. Usp. 43 1147–1154 (2000)
    42.70.Hj, 42.81.Qb, 61.72.Tt, 66.30.Hs (all)
  3. B.N. Mukashev, Kh.A. Abdullin, Yu.V. Gorelkinskii “Metastable and bistable defects in siliconPhys. Usp. 43 139–150 (2000)
    61.72.−y, 61.72.Tt, 61.80.−x, 71.55.−i (all)
  4. B.A. Volkov “Semiconductor encyclopedia—once againSov. Phys. Usp. 31 384–384 (1988)
    01.30.Kj, 61.72.Tt, 61.72.Vv, 72.20.−i, 61.66.Fn (all)
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