Defect-impurity engineering in implanted silicon

A.R. Chelyadinskii^a, F.F. Komarov^b
^aDepartment of Physics, Belarussian State University, prosp. F. Skoriny 4, Minsk, 220050, Belarus
^bA.N. Sevchenko Research Institute of Applied Physics Problems, Belarussian State University, pr. Kurchatova 7, Minsk, 220064, Belarus

The basic results of the studies of defect-impurity interaction in implanted silicon are presented. Factors affecting the way in which quasichemical reactions proceed — namely, temperature, level of ionization, and internal electric and elastic-stress fields — are analyzed. Methods for suppressing residual damage effects (rodlike defects, dislocation loops), and schemes for reducing the impurity diffusivity and for gettering metallic impurities in implanted silicon are considered. Examples of the practical realization of defect-impurity engineering are presented and discussed.

PACS: 61.72.Cc, 61.72.Tt, 61.72.Yx (all)
DOI: 10.1070/PU2003v046n08ABEH001371
URL: https://ufn.ru/en/articles/2003/8/b/
Web of Science

000187205200002
Citation: Chelyadinskii A R, Komarov F F "Defect-impurity engineering in implanted silicon" Phys. Usp. 46 789–820 (2003)

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TY JOUR
TI Defect-impurity engineering in implanted silicon
AU Chelyadinskii, A. R.
AU Komarov, F. F.
PB Physics-Uspekhi
PY 2003
JO Physics-Uspekhi
JF Physics-Uspekhi
JA Phys. Usp.
VL 46
IS 8
SP 789-820
UR https://ufn.ru/en/articles/2003/8/b/
ER https://doi.org/10.1070/PU2003v046n08ABEH001371

Оригинал: Челядинский А Р, Комаров Ф Ф «Дефектно-примесная инженерия в имплантированном кремнии» УФН 173 813–846 (2003); DOI: 10.3367/UFNr.0173.200308b.0813