RSS feeds
РусскийEnglish
Issue 12, 2024
Volume year page
Issues Authors PACS Subscription For authors

Issues

 / 

2003

 / 

August

←  →

Reviews of topical problems


Defect-impurity engineering in implanted silicon

 a,  b
a Department of Physics, Belarussian State University, prosp. F. Skoriny 4, Minsk, 220050, Belarus
b A.N. Sevchenko Research Institute of Applied Physics Problems, Belarussian State University, pr. Kurchatova 7, Minsk, 220064, Belarus

The basic results of the studies of defect-impurity interaction in implanted silicon are presented. Factors affecting the way in which quasichemical reactions proceed — namely, temperature, level of ionization, and internal electric and elastic-stress fields — are analyzed. Methods for suppressing residual damage effects (rodlike defects, dislocation loops), and schemes for reducing the impurity diffusivity and for gettering metallic impurities in implanted silicon are considered. Examples of the practical realization of defect-impurity engineering are presented and discussed.

Fulltext pdf (1.4 MB)
Fulltext is also available at DOI: 10.1070/PU2003v046n08ABEH001371
PACS: 61.72.Cc, 61.72.Tt, 61.72.Yx (all)
DOI: 10.1070/PU2003v046n08ABEH001371
URL: https://ufn.ru/en/articles/2003/8/b/
000187205200002
Citation: Chelyadinskii A R, Komarov F F "Defect-impurity engineering in implanted silicon" Phys. Usp. 46 789–820 (2003)
BibTexBibNote ® (generic)BibNote ® (RIS)MedlineRefWorks

Оригинал: Челядинский А Р, Комаров Ф Ф «Дефектно-примесная инженерия в имплантированном кремнии» УФН 173 813–846 (2003); DOI: 10.3367/UFNr.0173.200308b.0813

References (330) ↓ Cited by (26) Similar articles (20)

  1. Mozer A P Solid State Phenom. 69 – 70 1 (1999)
  2. Mil’vidskii M G Izv. Vyssh. Ucheb. Zaved. Mater. Elektron. Tekh. (1) 1 (2000)
  3. Kumakhov M A, Komarov F F Energeticheskie Poteri i Probegi Ionov v Tverdykh Telakh (Energy Loss and Ion Ranges in Solids, Minsk: Izd. BGU, 1979) [Translated into English (New York: Gordon and Breach Sci. Publ., 1981)]
  4. Burenkov A F et al. Tablitsy Parametrov Prostranstvennogo Raspredeleniya Ionno-Implantirovannykh Primesei (Tables of Ion Implantation Spatial Distributions, Minsk: Izd. BGU, 1980) [Translated into English (New York: Gordon and Breach Sci. Publ., 1986)]
  5. Gibbons J F Proc. IEEE 60 1062 (1972) [Translated into Russian TIIER 60 (9) 53 (1972)]
  6. Lenchenko V M, Akilov Yu Z Fiz. Tekh. Poluprovodn. 5 397 (1971)
  7. Akilov Yu Z, Lenchenko V M Fiz. Tekh. Poluprovodn. 8 30 (1974)
  8. Gerasimenko N N et al. Fiz. Tekh. Poluprovodn. 6 1978 (1972)
  9. Gerasimenko N N et al. Fiz. Tekh. Poluprovodn. 7 2297 (1973)
  10. Watkins G D Mater. Sci. Forum 143 – 147 (2) 5 (1993)
  11. Stein H J Appl. Phys. Lett. 15 61 (1969)
  12. Barnes C E IEEE Trans. Nucl. Sci. NS-16 28 (1969)
  13. Vavilov V S, Chelyadinskii A R Usp. Fiz. Nauk 165 347 (1995) [Phys. Usp. 38 333 (1995)]
  14. Corbett J W, Watkins G D Phys. Rev. Lett. 7 314 (1961)
  15. Watkins G D, in Lattice Defects in Semiconductors: Invited and Contributed Papers from the Intern. Conf., Freiburg, Switzerland, 22 – 25 July 1974 (Inst. of Phys. Conf. Ser. No. 23, London: Institute of Physics, 1975) p. 1
  16. Watkins G D, in Radiation Damage and Defects in Semiconductors: Proc. of the Intern. Conf., Reading, England, July 19 – 21, 1972 (Inst. of Phys. Conf. Ser. No. 16, London: Institute of Physics, 1973) p. 228
  17. Watkins G D J. Phys. Soc. Jpn. 18 (Suppl. 2) 22 (1963)
  18. McKeighen R E, Koehler J S Phys. Rev. B 4 462 (1971)
  19. Gwozdz P S, Koehler J S Phys. Rev. B 6 4571 (1972)
  20. Bourgoin J C, Corbett J W Phys. Lett. A 38 135 (1972)
  21. Weiser K Phys. Rev. 126 1427 (1962)
  22. Berezhnov N I et al. Nucl. Instrum. Meth. B 73 357 (1993)
  23. Watkins G D, in Radiation Effects in Semiconductors (Ed. F L Vook, New York: Plenum Press, 1968) p. 67
  24. Wada T et al. Bull. Daido Inst. Technol. 33 107 (1997)
  25. Mukashev B N, Abdullin K A, Gorelkinskii Yu V Phys. Status Solidi A 168 73 (1998)
  26. Gerasimenko N N, Dvurechenskii A V, Smirnov L S Fiz. Tekh. Poluprovodn. 5 1700 (1971)
  27. Beezhold W, Brower K L IEEE Trans. Nucl. Sci. NS-19 209 (1973)
  28. De Wit J C, Ammerlaan C A, Watkins G D, in Ion Implantation in Semiconductors: Proc. of the 2nd Intern. Conf., Garmisch-Partenkirchen, Germany, 1971 (Eds I Ruge, J Graul, Berlin: Springer-Verlag, 1971) p. 39
  29. Stein H J, Vook F L, Borders J A Appl. Phys. Lett. 14 328 (1969)
  30. Brower K L, Beezhold W J. Appl. Phys. 43 3499 (1972)
  31. Lee Y-H, Gerasimenko N N, Corbett J W Phys. Rev. B 14 4506 (1976)
  32. Brower K L Phys. Rev. B 14 872 (1976)
  33. Lee Y H, Kim Y M, Corbett J W Radiat. Eff. 15 77 (1972)
  34. Corbett J W, Karins J P, Tan T Y Nucl. Instrum. Methods 182/183 457 (1981)
  35. Berezhnov N I, Stelmakh V F, Chelyadinskii A R Phys. Status Solidi A 78 121 (1983)
  36. Jadan M, Berezhnov N I, Chelyadinskii A R Phys. Status Solidi B 189 K1 (1995)
  37. Chelyadinskii A R, Varichenko V S, Zaitsev A M Fiz. Tverd. Tela 40 1627 (1998) [Phys. Solid State 40 1478 (1998)]
  38. Jung W, Newell G S Phys. Rev. 132 648 (1963)
  39. Botvin V A et al. Fiz. Tekh. Poluprovodn. 6 1683 (1972) [Sov. Phys. Semicond. 6 1453 (1973)]
  40. Araika O J et al. Nucl. Instrum. Meth. B 73 503 (1993)
  41. Stel’makh V F, Tkachev V D, Chelyadinskii A R Fiz. Tverd. Tela 20 2196 (1978) [Sov. Phys. Solid State 20 1267 (1978)]
  42. Yoon M et al. Appl. Phys. Lett. 75 2791 (1999)
  43. Fedina L et al. Phys. Status Solidi A 171 147 (1999)
  44. Fedina L I, Gutakovskii A K, Aseev A L Izv. Vyssh. Ucheb. Zaved. Mater. Elektron. Tekh. (3) 19 (2000)
  45. Liefting J R, Custer J S, Saris F W Mater. Sci. Eng. B 25 60 (1994)
  46. Li J, Jones K S Appl. Phys. Lett. 73 3748 (1998)
  47. Tan T Y Mater. Res. Soc. Symp. Proc. 2 163 (1981)
  48. Lee Y H Appl. Phys. Lett. 73 1119 (1998)
  49. Tan T Y, Foel H Bull. Am. Phys. Soc. 25 372 (1980)
  50. Aseev A L et al. Fiz. Tekh. Poluprovodn. 13 764 (1979)
  51. Schreutelkamp R J et al. Mater. Sci. Rep. 6 275 (1991)
  52. Brown R A et al. Nucl. Instrum. Meth. B 127/128 55 (1997)
  53. Sechan K, Washburn J Radiat. Eff. 14 267 (1972)
  54. Wu W-K, Washburn J J. Appl. Phys. 48 3742 (1977)
  55. Jones K S, Prussin S, Weber E R Appl. Phys. A 45 1 (1988)
  56. Bicknell R W Proc. R. Soc. London Ser. A 311 75 (1969)
  57. Sechan K, Washburn J Radiat. Eff. 26 31 (1975)
  58. Tamura M et al. Nucl. Instrum. Meth. B 21 438 (1987)
  59. Simpson T W, Mitchell I V Nucl. Insrum. Meth. B 127/128 94 (1997)
  60. Tamura M, Suzuki T Nucl. Instrum. Meth. B 39 318 (1989)
  61. Davidson S M, Brooker G R Radiat. Eff. 6 33 (1970)
  62. Lambert J A, Dobson P S Philos. Mag. A 44 1043 (1981)
  63. Cembali F et al. Radiat. Eff. 36 111 (1978)
  64. Jasper C, Hoover A, Jones K S Appl. Phys. Lett. 75 2629 (1999)
  65. Narajan J, Fletcher J Mater. Res. Soc. Symp. Proc. 2 191 (1981)
  66. Mader S, in Ion Implantation: Science and Technology (Ed. J F Ziegler, Orlando: Academic Press, 1984) p. 84
  67. Kalinin V V, Aseev A L, Gerasimenko N N Fiz. Tekh. Poluprovodn. 13 28 (1979)
  68. Benton J L et al. J. Appl. Phys. 82 120 (1997)
  69. Tan T Y et al. Mater. Res. Soc. Symp. Proc. 2 179 (1981)
  70. Krakow W, Tan T Y, Foell H Mater. Res. Soc. Symp. Proc. 2 185 (1981)
  71. Lampin E, Senez V Nucl. Instrum. Meth. B 147 13 (1999)
  72. Bonafos C, Mathiot D, Claverie A J. Appl. Phys. 83 3008 (1998)
  73. Kim J et al. Phys. Rev. B 55 16186 (1997)
  74. Arai N, Takeda S, Kohyama M Phys. Rev. Lett. 78 4265 (1997)
  75. Claverie A et al. Nucl. Instrum. Meth. B 147 1 (1999)
  76. Cowern N E B et al. Phys. Rev. Lett. 82 4460 (1999)
  77. Pan G Z, Tu K N, Prussin S Appl. Phys. Lett. 71 659 (1997)
  78. Eaglesham D J et al. Appl. Phys. Lett. 65 2305 (1994)
  79. Gerasimenko N N, in Trudy 2-go Sovetsko-Amerikanskogo Seminara po Ionnoi Implantatsii, Pushchino, 1979 (Proc. 2nd Soviet-American Seminar on Ion Implantation, Ed. L S Smirnov, Novosibirsk: Izd. NGU, 1979) p. 351
  80. Ostwald W Z. Phys. Chem. 34 495 (1900)
  81. Burton B, Speight M V Philos. Mag. A 53 385 (1985)
  82. Hu S M Mater. Res. Soc. Symp. Proc. 2 333 (1980)
  83. Dunham S T Appl. Phys. Lett. 63 464 (1993)
  84. Huang R Y S, Dutton R W J. Appl. Phys. 74 5821 (1993)
  85. Meekison C D Philos. Mag. A 69 379 (1994)
  86. Seibt M Solid State Phenom. 32 – 33 463 (1993)
  87. Hu S M Mater. Sci. Eng. R 13 105 (1994)
  88. Chelyadinskii A R, Burenkov V A Fiz. Tverd. Tela 40 1995 (1998) [Phys. Solid State 40 1806 (1998)]
  89. Russell K C Adv. Colloid Interface Sci. 13 205 (1980)
  90. Chason E et al. J. Appl. Phys. 81 6513 (1997)
  91. Moller K, Jones K S, Law M E Appl. Phys. Lett. 72 2547 (1998)
  92. Raman R et al. Appl. Phys. Lett. 74 1591 (1999)
  93. Fatima S et al. Appl. Phys. Lett. 74 1141 (1999)
  94. Crowder B L, Title R S Radiat. Eff. 6 63 (1970)
  95. Chelyadinskii A R, Jadan M, Taher Haki, in Proc. of the Intern. Conf. Ion Implantation of Science and Technology, Naleczow, Poland, 22 – 24 Jan., 1997 (Ed. D Maczka, Lublin: Technical Univ. of Lublin, 1997) p. 114
  96. Zhevno A N, Sidorik V V, Tkachev V D Dokl. Akad. Nauk Bel. SSR 20 409 (1976)
  97. Coffa S, Libertino S, Spinella C Appl. Phys. Lett. 76 321 (2000)
  98. Coffa S et al. Appl. Phys. Lett. 73 1571 (1998)
  99. Gerasimenko N N, Mordkovich V N Poverkhnost (6) 5 (1987)
  100. Legotin D L, Bubnovskaya O V, Tyapunina N A Vestn. Mosk. Univ. Ser. 3: Fiz., Astron. (1) 58 (1996)
  101. Fladda G et al. Appl. Phys. Lett. 16 313 (1970)
  102. Mayer J W et al. Can. J. Phys. 46 663 (1968)
  103. Lilak A D et al. Appl. Phys. Lett. 74 2038 (1999)
  104. Nelson R S, in Radiation Damage and Defects in Semiconductors: Proc. of the Intern. Conf., Reading, England, July 19 – 21, 1972 (Inst. of Phys. Conf. Ser. No. 16, London: Institute of Physics, 1973) p. 140
  105. Xia Z et al. Vacuum 46 1071 (1995)
  106. Liefting R, PhD Thesis Degree (Enschede: Univ. of Twente, 1992)
  107. Acco S, Saris F W, Custer J S Mater. Sci. Eng. B 34 168 (1995)
  108. Merli P G, Zignani F Radiat. Eff. Lett. 50 115 (1980)
  109. Cerofolini G F et al. J. Appl. Phys. 56 2981 (1984)
  110. Chen L J et al. J. Appl. Phys. 52 3304 (1981)
  111. Bruel M et al. Nucl. Instrum. Methods 189 135 (1981)
  112. Tolstykh V P, Khit’ko V I, Shiryaev S Yu Poverkhnost (5) 90 (1986)
  113. Komarov F F et al. Radiat. Eff. Lett. 85 243 (1985)
  114. Andreev V S, Efimov S B, Komarov F F Pis’ma Zh. Tekh. Fiz. 11 1110 (1985) [Sov. Tech. Phys. Lett. 11 460 (1985)]
  115. Komarov F F et al. Radiat. Eff. 90 307 (1985)
  116. Holland O W et al. Radiat. Eff. 90 127 (1985)
  117. Elliman R G et al. Nucl. Insrum. Meth. B 19/20 435 (1987)
  118. Leiberich A, Mayer D M, Knoell R V Nucl. Instrum. Meth. B 19/20 457 (1987)
  119. Berti M et al. Nucl. Instrum. Meth. B 19/20 475 (1987)
  120. Komarov F F, Novikov A P, Tolstykh V P, in Materialy 16-go Vsesoyuzn. Soveshch. po Fizike Vzaimodeistviya Zaryazhennykh Chastits s Kristallami, Moskva, 1987 (Proc. 16th All-Union Workshop in Physics of Interaction of Charged Particles and Crystals, Moscow, 1987, Moscow: Izd. MGU, 1987) p. 126
  121. Holland O W, Narayan J Appl. Phys. Lett. 44 758 (1984)
  122. Gadili E et al. Jpn. J. Appl. Phys. Pt. 1 24 14 (1985)
  123. Komarov F F et al. Fiz. Tekh. Poluprovodn. 20 1726 (1986) [Sov. Phys. Semicond. 20 1081 (1986)]
  124. Olson G L et al. Mater. Res. Soc. Symp. Proc. 23 375 (1984)
  125. Galloni R et al. Nucl. Instrum. Meth. B 19/20 446 (1987)
  126. Holland O W, Narayan J Mater. Res. Soc. Symp. Proc. 27 235 (1984)
  127. Cembali G F, Merli P G, Zignani F Appl. Phys. Lett. 38 808 (1981)
  128. Cembali G et al. Appl. Phys. Lett. 40 62 (1982)
  129. Dietrich H B, Corazzi R J, Tseng W F Mater. Res. Soc. Symp. Proc. 27 241 (1984)
  130. Rupprecht H J. Vac. Sci. Technol. 15 1669 (1978)
  131. Westendorp J F M et al. Nucl. Instrum. Meth. B 37/38 357 (1989)
  132. Kakoschke R et al. IEEE Trans. Electron Dev. ED-37 1052 (1990)
  133. Kaim R E Solid State Technol. 33 103 (1990)
  134. Gerasimenko N N "Sposob ionnogo vnedreniya v kristallicheskie podlozhki" ("A method for implanting ions in crystalline substrates"), Author’s Certificate USSR No. 906304 (filed 14.10.81)
  135. Liefting J R et al. Mater. Res. Soc. Symp. Proc. 235 173 (1992)
  136. Liefting J R et al. Appl. Phys. Lett. 63 1134 (1993)
  137. Wong H et al. Appl. Phys. Lett. 52 1023 (1988)
  138. Liefting J R, Custer J S, Saris F W Mater. Res. Soc. Symp. Proc. 235 179 (1992)
  139. Stolk P A et al. J. Appl. Phys. 81 6031 (1997)
  140. Libertino S et al. Appl. Phys. Lett. 71 389 (1997)
  141. Watkins G D, Brower K L Phys. Rev. Lett. 36 1329 (1976)
  142. Tamura M, Ando T, Ohyu K Nucl. Instrum. Meth. B 59/60 572 (1991)
  143. Strane J W et al. J. Appl. Phys. 79 637 (1996)
  144. Kobayashi N et al. Nucl. Instrum. Meth. B 127/128 350 (1997)
  145. Tsukamoto K et al. Nucl. Instrum. Meth. B 59/60 584 (1991)
  146. Serre C et al. J. Appl. Phys. 77 2978 (1995)
  147. Vlasenko L S et al. Fiz. Tekh. Poluprovodn. 33 1164 (1999) [Semicond. 33 1059 (1999)]
  148. Werner P et al. Appl. Phys. Lett. 70 252 (1997)
  149. Claverie A et al. Nucl. Instrum. Meth. B 127/128 22 (1997)
  150. Simpson T W, Goldberg R D, Mitchell I V Appl. Phys. Lett. 67 2857 (1995)
  151. Berezhnov N I, Suprun-Belevich Yu P, Chelyadinskii A R Izv. Vyssh. Uchebn. Zaved. Fiz. (4) 55 (1991) [Sov. Phys. J. 34 325 (1991)]
  152. Rzhanov A V, Gerasimenko N N, Vasil’ev S V Pis’ma Zh. Tekh. Fiz. 7 1221 (1981) [Sov. Tech. Phys. Lett. 7 521 (1981)]
  153. Gay H C, Griot D "Thermal annealing by microwave assisted focused beam", Motorola Patent No. R 9016040 (filed 20.12.90)
  154. Gay H-C, Gibert P, Lin-Kwang J J. Appl. Phys. 88 3968 (2000)
  155. Zhao Q-T, Wang Z-L Nucl. Instrum. Meth. B 108 81 (1996)
  156. Lu W X et al. Appl. Phys. Lett. 55 1838 (1989)
  157. Borkovskaya O Yu et al. Fiz. Tekh. Poluprovodn. 17 1349 (1983) [Sov. Phys. Semicond. 17 856 (1983)]
  158. Nicholas K H et al. Appl. Phys. Lett. 26 320 (1975)
  159. Bohm H-J et al. IEEE Trans. Electron Dev. ED-35 1616 (1988)
  160. Takahashi M, Konaka S, Kajiyama K J. Appl. Phys. 54 6041 (1983)
  161. Bull C et al. Solid State Electron. 22 95 (1979)
  162. Ikeda T et al. Jpn. J. Appl. Phys. 14 311 (1975)
  163. Tamura M, Yoshihiro N, Ikeda T Appl. Phys. Lett. 27 427 (1975)
  164. Prussin S J. Appl. Phys. 45 1635 (1974)
  165. Ashburn P et al. Solid State Electron. 20 731 (1977)
  166. Liefting R et al. IEEE Trans. Electron Dev. ED-41 50 (1994)
  167. Wijburg R C et al. IEEE Trans. Electron Dev. ED-38 111 (1991)
  168. Sze S M Semiconductor Devices, Physics and Technology (New York: Wiley, 1985)
  169. Wong H, Cheung N W, Wong S S Nucl. Instrum. Meth. B 37/38 970 (1989)
  170. Gibbons J F Appl. Phys. Lett. 23 49 (1972)
  171. Aleksandrov O V, Kozlovskii V V, Popov V V Phys. Status Solidi A 110 61 (1986)
  172. Gerasimenko N N et al. Fiz. Tekh. Poluprovodn. 9 2117 (1975)
  173. Werner H W et al. Appl. Phys. 2 262 (1973)
  174. Gorban’ A N, Gorodokhin V A Izv. Vyssh. Uchebn. Zaved. Fiz. (9) 56 (1988)
  175. Stel’makh V F et al. Fiz. Tekh. Poluprovodn. 19 739 (1985) [Sov. Phys. Semicond. 19 455 (1985)]
  176. Stelmakh V F et al. Phys. Status Solidi A 89 45 (1985)
  177. Stel’makh V F, Suprun-Belevich Yu R, Chelyadinskii A R Izv. Vyssh. Uchebn. Zaved. Fiz. (9) 114 (1987)
  178. Stelmakh V F, Suprun-Belevich Yu R, Chelyadinskii A R Phys. Status Solidi A 112 381 (1989)
  179. Chelyadinskii A R, Taher Haki Phys. Status Solidi A 142 331 (1994)
  180. Stelmakh V F, Suprun-Belevich Yu R, Chelyadinskii A R Phys. Res. 8 288 (1988)
  181. Hu S M Phys. Rev. 180 773 (1969)
  182. Servidori M et al. J. Appl. Phys. 65 98 (1989)
  183. Servidori M et al. Nucl. Instrum. Meth. B 39 347 (1989)
  184. Ryssel H, Ruge I Ionenimplantation (Stuttgart: Teubner, 1978) [Translated into English: Ion Implantation (Chichester: Wiley, 1986); translated into Russian (Moscow: Nauka, 1983)]
  185. Gerasimenko N N, Zherebtsov A S, Kamnev A B Mikroelektronika 4 611 (1975)
  186. Scheid E, Chenevier P Phys. Status Solidi A 93 523 (1986)
  187. Gossmann H J et al. Appl. Phys. Lett. 63 639 (1993)
  188. Jadan M, Chelyadinskii A R, in X Intern. Conf. Ion Implantation Technology, Catania, Italia, June 13 – 17, 1994, Abstracts (Ed. R Jones, Amsterdam: North-Holland, 1994) p. 3.85
  189. Peterström S, Svensson B G J. Appl. Phys. 71 1215 (1992)
  190. Emtsev V V, Margoryan M A Pis’ma Zh. Tekh. Fiz. 10 1063 (1984) [Sov. Tech. Phys. Lett. 10 449 (1984)]
  191. Kalinin V V, Gerasimenko N N, Stenin S I Fiz. Tverd. Tela 18 2803 (1976)
  192. Stel’makh V F, Suprun-Belevich Yu R, Chelyadinskii A R Poverkhnost’: Fiz., Khim., Mekh. (10) 123 (1989)
  193. Ohta K, Sakano J, Furukawa S Nucl. Instrum. Meth. B 59/60 1113 (1991)
  194. Fahey P et al. Appl. Phys. Lett. 46 784 (1985)
  195. Mathiot D, Pfister J C J. Appl. Phys. 55 3518 (1984)
  196. Schwettmann F N, Kendal D L Appl. Phys. Lett. 19 218 (1971)
  197. Yoshida M J. Appl. Phys. 48 2169 (1977)
  198. Fair B, Tsai C C J. Electrochem. Soc. 124 1107 (1977)
  199. Burenkov V A, Jadan M, Chelyadinskii A R, in Proc. of the Intern. Conf. Ion Implantation of Science and Technology, Naleczow, Poland, 22 – 24 Jan., 1997 (Ed. D Maczka, Lublin: Technical Univ. of Lublin, 1997) p. 108
  200. Ajmera A C, Rozgonyi G A, Fair R B Appl. Phys. Lett. 52 813 (1988)
  201. Oehrlein G S, Cohen S A, Sedgwick T O Appl. Phys. Lett. 45 417 (1984)
  202. Negrini P et al. Philos. Mag. A 61 553 (1990)
  203. Chelyadinskii A R, Taher Haki, Suprun-Belevich Yu R, in Fall Meeting MRS, Boston, 1993 (Ed. M Stovola, Boston: Academic Press, 1993) p. J.28
  204. Cowern N E B et al. Appl. Phys. Lett. 65 2981 (1994)
  205. Xu J et al. J. Appl. Phys. 81 107 (1997)
  206. Gencer A H, Dunham S T J. Appl. Phys. 81 631 (1997)
  207. Bonafos C et al. J. Appl. Phys. 82 2855 (1997)
  208. Cheng J Y et al. J. Appl. Phys. 80 2105 (1996)
  209. Agarwal A et al. Appl. Phys. Lett. 70 3332 (1997)
  210. Liu J et al. J. Appl. Phys. 81 1656 (1997)
  211. Zhang L H et al. Appl. Phys. Lett. 67 2025 (1995)
  212. Rozgoni G A et al. J. Cryst. Growth 85 300 (1987)
  213. Bergholz W, Gilles D Phys. Status Solidi B 222 5 (2000)
  214. Mil’vidskii M G, Osvenskii V B Strukturnye Defekty v Monokristallakh Poluprovodnikov (Structure Defects in Semiconductor Single Crystals, Moscow: Metallurgiya, 1984) p. 210
  215. Smirnov L S (Ed.) Fizicheskie Protsessy v Obluchennykh Poluprovodnikakh (Physical Processes in Irradiated Semiconductors, Novosibirsk: Nauka, 1977)
  216. Bolotov V V et al. Voprosy Radiatsionnoi Tekhnologii Poluprovodnikov (A Survey of Semiconductor Radiation Techniques, Ed. L S Smirnov, Novosibirsk: Nauka, 1980) [Translated into English (Moscow: Mir Publ., 1983)]
  217. Yamazaki H et al. J. Appl. Phys. 87 4194 (2000)
  218. Ruiz H J, Pollack G P J. Electrochem. Soc. 125 128 (1978)
  219. Hu S M Appl. Phys. Lett. 36 561 (1980)
  220. Gaworzewski P, Ritter H Phys. Status Solidi A 67 511 (1981)
  221. Newman R C et al. J. Appl. Phys. 70 3061 (1991)
  222. McQuaid S A et al. J. Appl. Phys. 77 1427 (1995)
  223. Zhong L, Shimura F J. Appl. Phys. 73 707 (1993)
  224. Izunome K et al. Appl. Phys. Lett. 68 49 (1996)
  225. Gösele U, Tan T Y Appl. Phys. A 28 79 (1982)
  226. McQuaid S A et al. J. Appl. Phys. 86 1878 (1999)
  227. Shimura F, Higuchi T, Hockett R S Appl. Phys. Lett. 53 69 (1988)
  228. Wijaranakula W J. Appl. Phys. 68 6538 (1990)
  229. Kaiser W Phys. Rev. 105 1751 (1957)
  230. Lederhandler S, Patel J R Phys. Rev. 108 239 (1957)
  231. Hu S M J. Appl. Phys. 52 3974 (1981)
  232. Newman R C J. Phys.: Condens. Matter 12 R335 (2000)
  233. Voronkov V V, Mil’vidskii M G, Grinshtein P M Kristallografiya 34 199 (1989) [Sov. Phys. Crystallogr. 31 115 (1989)]
  234. Wada K, Inoue N, Kohra K J. Cryst. Growth 49 749 (1980)
  235. Ham F S J. Phys. Chem. Solids 6 335 (1958)
  236. Rozgonyi G A et al. Appl. Phys. Lett. 29 531 (1976)
  237. Senkader S, Esfandyari J, Hobler G J. Appl. Phys. 78 6469 (1995)
  238. Esfandyari J et al. J. Electrochem. Soc. 143 995 (1996)
  239. Senkader S, Hobler G, in Early Stages of Oxygen Precipitation in Silicon (NATO ASI Ser., Ser. 3, Vol. 17, Ed. R Jones, Dordrecht: Kluwer Acad. Publ., 1996) p. 447
  240. Christian J W The Theory of Transformations in Metals and Alloys Pt. 1 (Oxford: Pergamon Press, 1975)
  241. Vineyard G H J. Phys. Chem. Solids 3 121 (1957)
  242. Mikkelsen J Mater. Res. Soc. Symp. Proc. 59 1 (1986)
  243. Turnbull D, Fisher J C J. Chem. Phys. 17 71 (1949)
  244. Burke J The Kinetics of Phase Transformations in Metals (Oxford: Pergamon Press, 1965)
  245. Tiller W A, Oh S J. Appl. Phys. 64 375 (1988)
  246. Koizuka M, Yamada-Kaneta H J. Appl. Phys. 84 4255 (1998)
  247. Koizuka M, Yamada-Kaneta H J. Appl. Phys. 88 1784 (2000)
  248. Caplan P J et al. J. Appl. Phys. 50 5847 (1979)
  249. Poindexter E H, Caplan P J Prog. Surf. Sci. 14 201 (1983)
  250. Hu S M J. Appl. Phys. 51 5945 (1980)
  251. Sassella A et al. Appl. Phys. Lett. 75 1131 (1999)
  252. Borghesi A et al. Mater. Sci. Eng. B 73 145 (2000)
  253. Kishino S et al. J. Appl. Phys. 50 8240 (1979)
  254. Kishino S, Matsushita Y, Kanamori M Jpn. J. Appl. Phys. Pt. 1 21 1 (1982)
  255. Tang S S, Shen Y Y, Li Y Z Chinese J. Semicond. 7 489 (1986)
  256. Tan T Y, Gardner E E, Tice W K Appl. Phys. Lett. 30 175 (1977)
  257. Shimura F J. Appl. Phys. 59 3251 (1986)
  258. Liu P et al. J. Appl. Phys. 87 3669 (2000)
  259. Leroncille J Phys. Status Solidi A 74 159 (1982)
  260. Shimura F, Hockett R S Appl. Phys. Lett. 48 224 (1986)
  261. Aihara K et al. J. Appl. Phys. 88 3705 (2000)
  262. Tan T Y, Tice W K Philos. Mag. 34 615 (1976)
  263. Tice W K, Tan T Y Appl. Phys. Lett. 28 564 (1976)
  264. Ourmazd A, Schröter W Appl. Phys. Lett. 45 781 (1984)
  265. Colas E G, Weber E R Appl. Phys. Lett. 48 1371 (1986)
  266. Sumino K Mater. Sci. Eng. B 72 67 (2000)
  267. Gilles D, Weber E R, Hahn S K Phys. Rev. Lett. 64 196 (1990)
  268. Masters B J, Fairfield J M, Crowder B L, in Ion Implantation (Ed. F H Eisen, L T Chadderton, London: Gordon and Breach Sci. Publ., 1971) p. 81
  269. Buck T M, Pickar K A, Poate J M Appl. Phys. Lett. 21 485 (1972)
  270. Goetzberger A, Shockley W J. Appl. Phys. 31 1821 (1960)
  271. Huntley F A, Willoughby A F W J. Electrochem. Soc. 120 914 (1973)
  272. Seidel T E, Meek R L, Cullis A G J. Appl. Phys. 46 600 (1975)
  273. Wong H, Cheung N W, Chu P K Appl. Phys. Lett. 52 889 (1988)
  274. Benton J L et al. J. Electrochem. Soc. 143 1406 (1996)
  275. Lambert J L, Reese M Solid State Electron. 11 1055 (1968)
  276. Borland J O, Koelsch R Solid State Technol. 36 28 (1993)
  277. Wang Z L et al. J. Appl. Phys. 71 3780 (1992)
  278. Kuroi T et al. Jpn. J. Appl. Phys. Pt. 1 32 303 (1993)
  279. Venezia V C et al. Appl. Phys. Lett. 73 2980 (1998)
  280. Kögler R et al. Appl. Phys. Lett. 75 1279 (1999)
  281. Brown R A et al. Mater. Res. Soc. Symp. Proc. 438 155 (1997)
  282. Koveshnikov S, Kononchuk O Appl. Phys. Lett. 73 2340 (1998)
  283. Brown R A et al. J. Appl. Phys. 84 2459 (1998)
  284. Kögler R et al. Nucl. Instrum. Meth. B 186 298 (2002)
  285. Gueorguiev Y M et al. Appl. Phys. Lett. 75 3467 (1999)
  286. Kögler R et al. Nucl. Instrum. Meth. B 148 334 (1999)
  287. Troitski V Yu, Gerasimenko N N, Smirnov A V, in Ion Implantation 2000: Proc. of the Intern. Conf., Alpach, Austria, 17 – 22 Sept. 2000 (Eds H Ryssel et al., New York: IEEE, 2000) p. 334
  288. Griffioen C C et al. Nucl. Instrum. Meth. B 27 417 (1987)
  289. Wong-Leung J et al. Appl. Phys. Lett. 66 1231 (1995)
  290. Godey S et al. J. Appl. Phys. 87 2158 (2000)
  291. Delamare R et al. Nucl. Instrum. Meth. B 186 324 (2002)
  292. Myers S M, Follstaedt D M, Bishop D M Mater. Sci. Forum 143 – 147 1635 (1994)
  293. Myers S M, Follstaedt D M J. Appl. Phys. 79 1337 (1996)
  294. Lee Y-H, Corbett J W Phys. Rev. B 9 4351 (1974)
  295. Ramdas A K, Fan H Y J. Phys. Soc. Jpn. 18 34 (1963)
  296. Daly D F, Pickar K A Appl. Phys. Lett. 15 267 (1969)
  297. Akiyama T et al. Jpn. J. Appl. Phys. Pt. 2 38 L1363 (1999)
  298. Fichtner P F P et al. Appl. Phys. Lett. 70 732 (1997)
  299. Muto S, Takeda S, Hirata M Philos. Mag. A 72 1057 (1995)
  300. Murakami K et al. Phys. Rev. Lett. 77 3161 (1996)
  301. Okamoto Y, Saito M, Oshiyama A Phys. Rev. B 56 R10016 (1997)
  302. Van de Walle C G Phys. Rev. Lett. 80 2177 (1998)
  303. Hourahine B et al. Phys. Rev. B 57 R12666 (1998)
  304. Leitch A W R, Alex V, Weber J Phys. Rev. Lett. 81 421 (1998)
  305. Pritchard R E et al. Phys. Rev. B 56 13118 (1997)
  306. Kitajima M et al. Jpn. J. Appl. Phys. Pt. 2 38 L691 (1999)
  307. Kitajima M et al. Mater. Sci. Eng. B 58 13 (1999)
  308. Cerofolini G F et al. Phys. Rev. B 46 2061 (1992)
  309. Myers S M et al. Phys. Rev. B 47 13380 (1993)
  310. Markevich V P, Suezawa M, Murin L I Mater. Sci. Eng. B 58 26 (1999)
  311. Hourahine B et al. Mater. Sci. Eng. B 58 24 (1999)
  312. Van de Walle C G Phys. Rev. B 49 4579 (1994)
  313. Leitch A W R, Weber J, Alex V Mater. Sci. Eng. B 58 6 (1999)
  314. Raineri V et al. J. Appl. Phys. 78 3727 (1995)
  315. Matthews M D, Ashby S J Philos. Mag. 27 1313 (1973)
  316. Myers S M, Bishop D M, Follstaedt D M Mater. Res. Soc. Symp. Proc. 283 549 (1993)
  317. Skorupa W et al. Appl. Phys. Lett. 67 2992 (1995)
  318. Zhang M et al. Appl. Phys. Lett. 72 830 (1998)
  319. Zhang M et al. Nucl. Instrum. Meth. B 134 360 (1998)
  320. Zhang M et al. J. Appl. Phys. 85 94 (1999)
  321. Job R et al. Appl. Phys. A 72 325 (2001)
  322. Kinomura A et al. Nucl. Instrum. Meth. B 127/128 297 (1997)
  323. Wong-Leung J, Nygren E, Williams J S Nucl. Instrum. Meth. B 106 424 (1995)
  324. Mohadjeri B, Williams J S, Wong-Leung J Appl. Phys. Lett. 66 1889 (1995)
  325. Ishiwara H, Saitoh S, Hikosaka K Jpn. J. Appl. Phys. 20 843 (1981)
  326. Myers S M, Bishop D M, Follstaedt D M Mater. Res. Soc. Symp. Proc. 316 33 (1994)
  327. Wong-Leung J et al. Nucl. Instrum. Meth. B 96 253 (1995)
  328. Petersen G A, Myers S M, Follstaedt D M Nucl. Instrum. Meth. B 127/128 301 (1997)
  329. Saint-Jacques R G Nucl. Instrum. Methods 209/210 333 (1983)
  330. Popov V P et al. Mikroelektronika 31 274 (2002) [Russ. Microelectron. 31 232 (2002)]
© 1918–2024 Uspekhi Fizicheskikh Nauk
Email: ufn@ufn.ru Editorial office contacts About the journal Terms and conditions