RSS feeds
РусскийEnglish
Issue 9, 2026
Volume year page
Issues Authors PACS Subscription For authors

Issues

 / 

2003

 / 

August

←  →

Reviews of topical problems


Defect-impurity engineering in implanted silicon

 a,  b
a Department of Physics, Belarussian State University, prosp. F. Skoriny 4, Minsk, 220050, Belarus
b A.N. Sevchenko Research Institute of Applied Physics Problems, Belarussian State University, pr. Kurchatova 7, Minsk, 220064, Belarus

The basic results of the studies of defect-impurity interaction in implanted silicon are presented. Factors affecting the way in which quasichemical reactions proceed — namely, temperature, level of ionization, and internal electric and elastic-stress fields — are analyzed. Methods for suppressing residual damage effects (rodlike defects, dislocation loops), and schemes for reducing the impurity diffusivity and for gettering metallic impurities in implanted silicon are considered. Examples of the practical realization of defect-impurity engineering are presented and discussed.

Fulltext pdf (1.4 MB)
Fulltext is also available at DOI: 10.1070/PU2003v046n08ABEH001371
PACS: 61.72.Cc, 61.72.Tt, 61.72.Yx (all)
DOI: 10.1070/PU2003v046n08ABEH001371
URL: https://ufn.ru/en/articles/2003/8/b/
000187205200002
Citation: Chelyadinskii A R, Komarov F F "Defect-impurity engineering in implanted silicon" Phys. Usp. 46 789–820 (2003)
BibTexBibNote ® (generic)BibNote ® (RIS)MedlineRefWorks

Оригинал: Челядинский А Р, Комаров Ф Ф «Дефектно-примесная инженерия в имплантированном кремнии» УФН 173 813–846 (2003); DOI: 10.3367/UFNr.0173.200308b.0813

References (330) Cited by (31) ↓ Similar articles (20)

  1. Borgekov D B, Kozlovskiy A L et al Kompl. Ispolz. Min. Syra = Compl. Use Of Min. Resour. 337 (2) 21 (2026)
  2. Kovalev M S, Podlesnykh I M et al ’pс’?’?kh’? ф’?’?’?ch’?с’?’?kh ’?’?у’? 196 (06) 601 (2026)
  3. Snitovsky Y P J. Surf. Investig. 19 (S1) S58 (2025)
  4. Ivanova A I, Vakhrushev D O et al J. Surf. Investig. 18 (5) 1216 (2024)
  5. Kovalchuk N S, Marudo Yu A et al High Temp Mat Proc 26 (3) 59 (2022)
  6. ODZAEV V, PRASALOVICH U et al HERALD OF POLOTSK STATE UNIVERSITY. Series ’l FUNDAMENTAL SCIENCES 39 (11) 65 (2022)
  7. Odzaev V B, Pyatlitski A N et al Vesc?y Akadem?y?y Navuk Belarus?y. Sery?n Fizika-matematyčnyh Navuk 57 (2) 232 (2021)
  8. Bogatov N, Grigoryan L et al J. Phys.: Conf. Ser. 1679 (3) 032077 (2020)
  9. Nikolskaya A, Korolev D et al Nuclear Instruments And Methods In Physics Research Section B: Beam Interactions With Materials And Atoms 472 32 (2020)
  10. Borisov A M, Kazakov V A et al J. Surf. Investig. 13 (2) 306 (2019)
  11. Litovchenko V G, Melnik V P, Romanjuk B M Ukr. J. Phys. 60 (1) 64 (2019)
  12. Makarenko L F, Lastovskii S B et al Journal of Applied Physics 123 (16) (2018)
  13. Odzhaev V B, Panfilenko A K et al Vesc?y Akadem?y?y Navuk Belarus?y. Sery?n Fizika-tehničnyh Navuk 63 (2) 244 (2018)
  14. Herega A The Selected Models of the Mesostructure of Composites SpringerBriefs In Physics Chapter 3 (2018) p. 17
  15. Khuchua N, Tigishvili M et al Ion Beam Applications Chapter 7 (2018)
  16. Agafonov Y A, Bogatov N M et al J. Surf. Investig. 12 (3) 499 (2018)
  17. Tigishvili M, Khuchua N et al Phys. Status Solidi C 14 (7) (2017)
  18. Poklonski N A, Gorbachuk N I et al Modern Electronic Materials 2 (2) 48 (2016)
  19. Bazarov V V, Nuzhdin V I et al J Appl Spectrosc 83 (1) 47 (2016)
  20. Khuchua N, Tigishvili M et al SSP 242 374 (2015)
  21. Rudakov V I, Ovcharov V V et al Russ Microelectron 43 (4) 284 (2014)
  22. Poklonski N A, Gorbachuk N I et al Acta Phys. Pol. A 123 (5) 926 (2013)
  23. Michel Ju, Koester S et al Series In Optics And Optoelectronics Vol. Handbook of Silicon PhotonicsPhotodetectors20130577 (2013) p. 479
  24. Poklonski N A, Gorbachuk N I et al Microelectronics Reliability 50 (6) 813 (2010)
  25. Olikh O Ya Semiconductors 43 (6) 745 (2009)
  26. Ovcharov V V, Rudakov V I J. Surf. Investig. 3 (4) 639 (2009)
  27. Poklonski N A, Gorbachuk N I et al Nuclear Instruments And Methods In Physics Research Section B: Beam Interactions With Materials And Atoms 266 (23) 5007 (2008)
  28. Extended Defects in Semiconductors 1 5 (2007) p. 412
  29. Dolgolenko A P Semicond. Phys. Quantum Electron. Optoelectron. 10 (1) 4 (2007)
  30. Varentsov M D, Gaidar G P et al Nucl. Phys. At. Energy 7 (1) 60 (2006)
  31. Olikhovsky S J, Belova M M, Kochelab Y V Usp. Fiz. Met. 7 (3) 135 (2006)
© 1918–2026 Uspekhi Fizicheskikh Nauk
Email: ufn@ufn.ru Editorial office contacts About the journal Terms and conditions