Oleg P. Pchelyakov



Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences
Address: prosp. Akad. Lavrenteva 13, Novosibirsk, 630090, Russian Federation


Articles

  1. Yu.B. Bolkhovityanov, O.P. Pchelyakov “GaAs epitaxy on Si substrates: modern status of research and engineering51 437–456 (2008)
  2. Yu.B. Bolkhovityanov, O.P. Pchelyakov, S.I. Chikichev “Silicon-germanium epilayers: physical fundamentals of growing strained and fully relaxed heterostructures44 655–680 (2001)
  3. O.P. Pchelyakov “Molecular beam epitaxy: equipment, devices, technology43 923–925 (2000)

See also: Yu.B. Bolkhovityanov, S.I. Chikichev

PACS: 61.72.Lk, 81.15.-z, 62.25.-g, 81.05.Cy, 81.05.Ea, 85.40.Sz, 62.25.+g, 73.40.Kp, 07.07.-a, 81.15.Hi, 85.30.-z,

© 1918–2019 Uspekhi Fizicheskikh Nauk
Email: ufn@ufn.ru Editorial office contacts About the journal Terms and conditions