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Silicon-germanium epilayers: physical fundamentals of growing strained and fully relaxed heterostructures

, ,
Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, prosp. Akad. Lavrenteva 13, Novosibirsk, 630090, Russian Federation

GexSi1-x/Si heterostructures involving two elemental semiconductors are becoming an important element in microelectronics. Their epitaxial growth requires a detailed knowledge of the mechanisms of elastic and plastic deformations in continuous and island films both at the early stages of epitaxy and during the subsequent heat treatment. The present work is a systematic review of current ideas on the fundamental physical mechanisms governing the formation of elastically strained and plastically relaxed GexSi1- x/Si heterocompositions. In particular, the use of compliant and soft substrates and the epitaxial synthesis of nanometer-sized islands (’quantum dots’) are discussed.

Text can be downloaded in Russian. English translation is available on IOP Science.
PACS: 61.72.Lk, 62.25.+g, 73.40.Kp, 81.15.−z (all)
DOI: 10.1070/PU2001v044n07ABEH000879
URL: https://ufn.ru/en/articles/2001/7/a/
Citation: Bolkhovityanov Yu B, Pchelyakov O P, Chikichev S I "Silicon-germanium epilayers: physical fundamentals of growing strained and fully relaxed heterostructures" Phys. Usp. 44 655–680 (2001)
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Оригинал: Болховитянов Ю Б, Пчеляков О П, Чикичев С И «Кремний-германиевые эпитаксиальные пленки: физические основы получения напряженных и полностью релаксированных гетероструктур» УФН 171 689–715 (2001); DOI: 10.3367/UFNr.0171.200107a.0689

References (140) ↓ Cited by (47) Similar articles (20)

  1. Kvam E P, Maher D M, Humphreys C J J. Mater. Res. 5 1900 (1990)
  2. Frank F C, Van der Merwe J H Proc. Roy. Soc. London Ser. A 198 205 (1949)
  3. Matthews J W J. Vac. Sci. Technol. 12 126 (1975)
  4. Gillard V T, Nix W D, Freund L B J. Appl. Phys. 76 7280 (1994)
  5. Matthews J W, Blakeslee A E J. Cryst. Growth 27 118 (1974)
  6. Fitzgerald E A Mater. Sci. Rep. 7 87 (1991)
  7. Fisher A Appl. Phys. Lett. 64 1218 (1994)
  8. Gutakovskiî A K, Pchelyakov O P, Stenin S I Kristallografiya. 25 806 (1980) [Sov. Phys. Crystallogr. 25 461 (1980)]
  9. Green M L et al. J. Appl. Phys. 69 745 (1991)
  10. Houghton D C et al. Appl. Phys. Lett. 56 460 (1990)
  11. Houghton D C et al. J. Appl. Phys. 67 1850 (1990)
  12. People R, Bean J C Appl. Phys. Lett. 47 322 (1985)
  13. Bolkhovityanov Yu B et al. Thin Solid Films (2001, in press)
  14. Bai G et al. J. Appl. Phys. 75 4475 (1994)
  15. Hirth J P, Lothe J Theory of Dislocations 2nd ed. (New York: Wiley, 1982)
  16. Hull R, Bean J C, Buescher C J. Appl. Phys. 66 S837 (1989)
  17. Hull R et al. Appl. Phys. Lett. 65 327 (1994)
  18. Stach E A et al. J. Appl. Phys. 83 1931 (1998)
  19. Hull R et al. Phys. Stat. Solidi A 171 133 (1999)
  20. Houghton D C J. Appl. Phys. 70 2136 (1991)
  21. Perovic D D, Houghton D C Inst. Phys. Conf. Ser. 146 117 (1995)
  22. Alexander H, Haasen P Solid State Phys. 22 27 (1968)
  23. Farber B Ya, Iunin Yu L, Nikitenko V I Phys. Stat. Solidi A 97 469 (1986)
  24. Iunin Yu L et al. Zh. Eksp. Teor. Fiz. 100 1951 (1991) [Sov. Phys. JETP 73 1079 (1991)]
  25. Iunin Yu L, Nikitenko V I Phys. Stat. Solidi A 171 17 (1999)
  26. Yonenaga I Phys. Stat. Solidi A 171 41 (1999)
  27. Perovic D D et al. Thin Solid Films 183 141 (1989)
  28. Wickenhauser S et al. Appl. Phys. Lett. 70 324 (1997)
  29. Stach E A et al. Microsc. Microanal. 4 294 (1998)
  30. Jain S C et al. J. Appl. Phys. 87 965 (2000)
  31. Matthews J W, Blakeslee A E, Mader S Thin Solid Films 33 253 (1976)
  32. Kamat S V, Hirth J P J. Appl. Phys. 67 6844 (1990)
  33. Eaglesham D J et al. Philos. Mag. A 59 1059 (1989)
  34. Hull R, Bean J C J. Vac. Sci. Technol. A 7 2580 (1989)
  35. Mooney P M et al. J. Appl. Phys. 75 3968 (1994)
  36. Beanland R J. Appl. Phys. 77 6217 (1995)
  37. Vdovin V I Phys. Stat. Solidi A 171 239 (1999)
  38. Jain S C, Willander M, Maes H Semicond. Sci. Technol. 11 641 (1996)
  39. Tersoff J, LeGoues F K Phys. Rev. Lett. 72 3570 (1994)
  40. Shchukin V A, Bimberg D Appl. Phys. A 67 687 (1998)
  41. Ozkan C S, Nix W D, Gao H Appl. Phys. Lett. 70 2247 (1997)
  42. Cullis A G, Pidduck A J, Emeny M T J. Cryst. Growth 158 15 (1996)
  43. Hu S M J. Appl. Phys. 69 7901 (1991)
  44. Matthews J W, Mader S, Light T B J. Appl. Phys. 41 3800 (1970)
  45. Dodson B W, Tsao J Y Appl. Phys. Lett. 51 1325 (1987); 52 852 (1988)
  46. Fox B A, Jesser W A J. Appl. Phys. 68 2801 (1990)
  47. Jesser W A, Fox B A J. Electron. Mater. 19 1289 (1990)
  48. Hull R, Bean J C Appl. Phys. Lett. 54 925 (1989)
  49. Gillard V T, Nix W D, Freund L B J. Appl. Phys. 76 7280 (1994)
  50. Freund L B J. Appl. Phys. 68 2073 (1990)
  51. Fitzgerald E A et al. Phys. Stat. Solidi A 171 227 (1999)
  52. Fisher A et al. Phys. Rev. B 54 8761 (1996)
  53. Hagen W, Strunk H Appl. Phys. 17 85 (1978)
  54. Rajan K, Denhoff M J. Appl. Phys. 62 1710 (1987)
  55. Vdovin V I (private communication)
  56. Beanland R J. Appl. Phys. 72 4031 (1992)
  57. LeGoues F K, Meyerson B S, Morar J F Phys. Rev. Lett. 66 2903 (1991)
  58. LeGoues F K Phys. Rev. Lett. 72 876 (1994)
  59. Capano M A Phys. Rev. B 45 11768 (1992)
  60. Tuppen C G, Gibbings C J, Hockly M J. Cryst. Growth 94 392 (1989)
  61. Houghton D C et al. J. Appl. Phys. 67 1850 (1990)
  62. Liu J L et al. Appl. Phys. Lett. 75 1586 (1999)
  63. Vdovin V I J. Cryst. Growth 172 58 (1997)
  64. Gosling T J J. Appl. Phys. 74 5415 (1993)
  65. Dentel D et al. J. Cryst. Growth 191 697 (1998)
  66. Gosling T J et al. J. Appl. Phys. 73 8267 (1993)
  67. Houghton D C, Davies M, Dion M Appl. Phys. Lett. 64 505 (1994)
  68. Tkhorik Yu A, Khazan L S Plasticheskaya Deformatsiya i Dislokatsii Nesootvetstviya v Geteroepitaksial’nykh Sistemakh (Plastic Strain and Misfit Dislocations in Heteroepitaxial Systems, Kiev: Naukova Dumka, 1983) p. 135
  69. Freund L B, Nix W D Appl. Phys. Lett. 69 173 (1996)
  70. Zhang T Y, Su Y J Appl. Phys. Lett. 74 1689 (1999)
  71. Lo Y H Appl. Phys. Lett. 59 2311 (1991)
  72. Powell A R, LeGoues F K, Iyer S S Appl. Phys. Lett. 64 324 (1994)
  73. Brunner K et al. Thin Solid Films 321 245 (1998)
  74. Antypas G A, Edgecumbe J Appl. Phys. Lett. 26 371 (1975)
  75. Lau W S et al. Jpn. J. Appl. Phys. 36 3770 (1997)
  76. Carter-Coman C et al. Appl. Phys. Lett. 70 1754 (1997)
  77. Ejeckam F E et al. Appl. Phys. Lett. 71 776 (1997)
  78. Kästner G, Gösele U, Tan T Y Appl. Phys. A 66 13 (1988)
  79. Jesser W A, van der Merwe J H, Stoop P M J. Appl. Phys. 85 2129 (1999)
  80. Bellet D, in Properties of Porous Silicon (Ed. L Carnham, London: INSPEC, 1997) p. 127
  81. Romanov S I et al. Appl. Phys. Lett. 75 4118 (1999)
  82. Asaro R J, Tiller W A Metall. Trans. 3 1789 (1972)
  83. Grinfel’d M A Dokl. Akad. Nauk SSSR 290 1358 (1986) [Sov. Phys. Dokl. 31 831 (1986)]
  84. Berger P R et al. Appl. Phys. Lett. 53 684 (1988)
  85. Srolovitz D J Acta Metall. 37 621 (1989)
  86. Eaglesham D J, Cerullo M Phys. Rev. Lett. 64 1943 (1990)
  87. Guha S, Madhukar A, Rajkumar K C Appl. Phys. Lett. 57 2110 (1990)
  88. Mo Y W et al. Phys. Rev. Lett. 65 1020 (1990)
  89. Snyder C W et al. Phys. Rev. Lett. 66 3032 (1991)
  90. Cullis A G et al. J. Cryst. Growth 123 333 (1992)
  91. Ratsch C, Zangwill A Surface Sci. 293 123 (1993)
  92. Spencer B J, Voorhees P W, Davis S H J. Appl. Phys. 73 4955 (1993)
  93. Freund L B, Jonsdottir F J. Mech. Phys. Solids 41 1245 (1993)
  94. Johnson H T, Freund L B J. Appl. Phys. 81 6081 (1997)
  95. Obayashi Y, Shintani K J. Appl. Phys. 84 3142 (1998)
  96. Müller P, Kern R J. Cryst. Growth 193 257 (1998)
  97. Kern R, Müller P Surface Sci. 392 103 (1997)
  98. Moll N, Scheffler M, Pehlke E Phys. Rev. B 58 4566 (1998); Pehlke E et al. Appl. Phys. A 65 525 (1997)
  99. Kamins T I et al. J. Appl. Phys. 85 1159 (1999)
  100. Floro J A et al. Phys. Rev. B 59 1990 (1999)
  101. Ozkan C S, Nix W D, Gao H Appl. Phys. Lett. 70 2247 (1997)
  102. Dentel D et al. J. Cryst. Growth 191 697 (1998)
  103. Lafontaine H et al. J. Vac. Sci. Tech. B 16 599 (1998)
  104. Jesson D E et al. Phys. Rev. Lett. 71 1744 (1993)
  105. Dorsch W et al. Appl. Phys. Lett. 72 179 (1998)
  106. Cullis A G, Pidduck A J, Emeny M T Phys. Rev. Lett. 75 2368 (1995)
  107. Cullis A G, Pidduck A J, Emeny M T J. Cryst. Growth 158 15 (1996)
  108. Peiro F et al. Appl. Phys. Lett. 74 3818 (1999)
  109. Gao H et al. Philos. Mag. A 79 349 (1999)
  110. Gallas B et al. J. Cryst. Growth 201/202 547 (1999)
  111. Olsen G H J. Cryst. Growth 31 223 (1975)
  112. Lutz M A et al. Appl. Phys. Lett. 66 724 (1995)
  113. Samavedam S B, Fitzgerald E A J. Appl. Phys. 81 3 108 (1997)
  114. Dargys A, Kundrotas J Handbook on Physical Properties of Ge, Si, GaAs and InP (Vilnius: Science and Encyclopedia Publ., 1994)
  115. Liu L, Lee C S, Marshak A H Solid State Electron. 37 421 (1994)
  116. Whall T E, Parker E H C Thin Solid Films 367 250 (2000)
  117. König V, Glück M, Höck G J. Vac. Sci. Technol. B 16 2609 (1998)
  118. Ahlgren D C, Jagannathan B Solid State Technol. 43 53 (2000)
  119. Abrahams M S et al. J. Mater. Sci. 4 223 (1969)
  120. Burd J W Trans. Metall. Soc. AIME 245 571 (1969)
  121. Schäffler F Semicond. Sci. Technol. 12 1515 (1997); Thin Solid Films 321 1 (1998)
  122. Paul D J Thin Solid Films 321 172 (1998)
  123. Fitzgerald E A et al. Appl. Phys. Lett. 59 811 (1991)
  124. Schäffler F et al. Semicond. Sci. Technol. 7 260 (1992)
  125. Fitzgerald E A et al. J. Vac. Sci. Technol. A 15 1048 (1997)
  126. Currie M T et al. Appl. Phys. Lett. 72 1718 (1998)
  127. Samavedam S B et al. Appl. Phys. Lett. 73 2125 (1998)
  128. Iwano H et al. Thin Solid Films 317 17 (1998)
  129. König U Phys. Scripta 68 90 (1996)
  130. Valtuena J F et al. J. Cryst. Growth 182 281 (1997)
  131. Sieg R M et al. Appl. Phys. Lett. 73 3111 (1998)
  132. Fitzgerald E A et al. J. Appl. Phys. 65 2220 (1989)
  133. Noble D B et al. Appl. Phys. Lett. 56 51 (1990)
  134. Hammond R et al. Appl. Phys. Lett. 71 2517 (1997)
  135. Rupp T et al. Thin Solid Films 294 27 (1997)
  136. Fischer R et al. J. Appl. Phys. 60 1640 (1986)
  137. Samonji K et al. Appl. Phys. Lett. 69 100 (1996)
  138. Obata T et al. J. Appl. Phys. 81 199 (1997)
  139. Osten H J, Bugiel E Appl. Phys. Lett. 70 2813 (1997)
  140. Pchelyakov O P et al. Thin Solid Films 367 75 (2000); Pchelyakov O P Fiz. Tekh. Poluprovodn. 34 1281 (2000) [Semiconductors 34 1229 (2000)]

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