Silicon – germanium epilayers: physical fundamentals of growing strained and fully relaxed heterostructures

Yu.B. Bolkhovityanov, O.P. Pchelyakov, S.I. Chikichev
Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, prosp. Akad. Lavrenteva 13, Novosibirsk, 630090, Russian Federation

Ge_xSi_1-x/Si heterostructures involving two elemental semiconductors are becoming an important element in microelectronics. Their epitaxial growth requires a detailed knowledge of the mechanisms of elastic and plastic deformations in continuous and island films both at the early stages of epitaxy and during the subsequent heat treatment. The present work is a systematic review of current ideas on the fundamental physical mechanisms governing the formation of elastically strained and plastically relaxed Ge_xSi_1-
x/Si heterocompositions. In particular, the use of compliant and soft substrates and the epitaxial synthesis of nanometer-sized islands (’quantum dots’) are discussed.

PACS: 61.72.Lk, 62.25.+g, 73.40.Kp, 81.15.−z (all)
DOI: 10.1070/PU2001v044n07ABEH000879
URL: https://ufn.ru/en/articles/2001/7/a/
Web of Science

000173467700001
Citation: Bolkhovityanov Yu B, Pchelyakov O P, Chikichev S I "Silicon-germanium epilayers: physical fundamentals of growing strained and fully relaxed heterostructures" Phys. Usp. 44 655–680 (2001)

BibTexBibNote ® (generic)BibNote ® (RIS)MedlineRefWorks

Оригинал: Болховитянов Ю Б, Пчеляков О П, Чикичев С И «Кремний-германиевые эпитаксиальные пленки: физические основы получения напряженных и полностью релаксированных гетероструктур» УФН 171 689–715 (2001); DOI: 10.3367/UFNr.0171.200107a.0689

References (140) Cited by (56) Similar articles (20) ↓

Yu.B. Bolkhovityanov, O.P. Pchelyakov “GaAs epitaxy on Si substrates: modern status of research and engineering” 51 437–456 (2008)
S.A. Kukushkin, A.V. Osipov “Thin-film condensation processes” 41 983–1014 (1998)
V.V. Slezov, V.V. Sagalovich “Diffusive decomposition of solid solutions” 30 23–45 (1987)
A.V. Golenishchev-Kutuzov, V.A. Golenishchev-Kutuzov, R.I. Kalimullin “Induced domains and periodic domain structures in electrically and magnetically ordered materials” 43 647–662 (2000)
V.I. Fistul’, N.Z. Shvarts “TUNNEL DIODES” 5 430–459 (1962)
R.I. Garber, I.A. Gindin “Physics of the strength of crystalline materials” 3 41–77 (1960)
V.B. Shikin, Yu.V. Shikina “Charged dislocations in semiconductor crystals” 38 845–875 (1995)
V.I. Boiko, A.N. Valyaev, A.D. Pogrebnyak “Metal modification by high-power pulsed particle beams” 42 1139–1166 (1999)
A.V. Eletskii “Mechanical properties of carbon nanostructures and related materials” 50 225–261 (2007)
A.I. Olemskoi, I.A. Sklyar “Evolution of the defect structure of a solid during plastic deformation” 35 (6) 455–480 (1992)
I.V. Kukushkin, S.V. Meshkov, V.B. Timofeev “Two-dimensional electron density of states in a transverse magnetic field” 31 511–534 (1988)
V.V. Kirsanov, A.N. Orlov “Computer simulation of the atomic structure of defects in metals” 27 106–133 (1984)
F.M. Kuni, A.K. Shchekin, A.P. Grinin “Theory of heterogeneous nucleation for vapor undergoing a gradual metastable state formation” 44 331–370 (2001)
A.L. Suvorov “Field-ion microscopy of radiation defects in single crystals” 13 317–334 (1970)
L.M. Blinov, V.M. Fridkin et al “Two-dimensional ferroelectrics” 43 243–257 (2000)
A.M. Kosevich “Dynamical theory of dislocations” 7 837–854 (1965)
E.Z. Meilikhov “Structural features, critical currents and current-voltage characteristics of high temperature superconducting ceramics” 36 (3) 129–151 (1993)
A.P. Pyatakov, A.K. Zvezdin “Magnetoelectric and multiferroic media” 55 557–581 (2012)
A.V. Guglielmi, A.S. Potapov “Frequency-modulated ULF waves in near-Earth space” 64 452–467 (2021)
A.P. Porfirev, A.A. Kuchmizhak et al “Phase singularities and optical vortices in photonics” 65 789–811 (2022)

The list is formed automatically.