S.I. Chikichev

Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences
Address: prosp. Akad. Lavrenteva 13, Novosibirsk, 630090, Russian Federation

Articles

Yu.B. Bolkhovityanov, O.P. Pchelyakov, S.I. Chikichev “Silicon-germanium epilayers: physical fundamentals of growing strained and fully relaxed heterostructures” 44 655–680 (2001)

See also: Yu.B. Bolkhovityanov, O.P. Pchelyakov

PACS: 61.72.Lk, 62.25.+g, 73.40.Kp, 81.15.-z