S.I. Chikichev



Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences
Address: prosp. Akad. Lavrenteva 13, Novosibirsk, 630090, Russian Federation


Articles

  1. Yu.B. Bolkhovityanov, O.P. Pchelyakov, S.I. Chikichev “Silicon-germanium epilayers: physical fundamentals of growing strained and fully relaxed heterostructures44 655–680 (2001)

See also: O.P. Pchelyakov, Yu.B. Bolkhovityanov

PACS: 61.72.Lk, 62.25.+g, 73.40.Kp, 81.15.-z,

© 1918–2019 Uspekhi Fizicheskikh Nauk
Email: ufn@ufn.ru Editorial office contacts About the journal Terms and conditions