Reviews of topical problems

Silicon-germanium epilayers: physical fundamentals of growing strained and fully relaxed heterostructures

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Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, prosp. Akad. Lavrenteva 13, Novosibirsk, 630090, Russian Federation

GexSi1-x/Si heterostructures involving two elemental semiconductors are becoming an important element in microelectronics. Their epitaxial growth requires a detailed knowledge of the mechanisms of elastic and plastic deformations in continuous and island films both at the early stages of epitaxy and during the subsequent heat treatment. The present work is a systematic review of current ideas on the fundamental physical mechanisms governing the formation of elastically strained and plastically relaxed GexSi1- x/Si heterocompositions. In particular, the use of compliant and soft substrates and the epitaxial synthesis of nanometer-sized islands (’quantum dots’) are discussed.

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Fulltext is also available at DOI: 10.1070/PU2001v044n07ABEH000879
PACS: 61.72.Lk, 62.25.+g, 73.40.Kp, 81.15.−z (all)
DOI: 10.1070/PU2001v044n07ABEH000879
Citation: Bolkhovityanov Yu B, Pchelyakov O P, Chikichev S I "Silicon-germanium epilayers: physical fundamentals of growing strained and fully relaxed heterostructures" Phys. Usp. 44 655–680 (2001)
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RT Journal
T1 Silicon – germanium epilayers: physical fundamentals of growing strained and fully relaxed heterostructures
A1 Bolkhovityanov,Yu.B.
A1 Pchelyakov,O.P.
A1 Chikichev,S.I.
PB Physics-Uspekhi
PY 2001
FD 10 Jul, 2001
JF Physics-Uspekhi
JO Phys. Usp.
VO 44
IS 7
SP 655-680
DO 10.1070/PU2001v044n07ABEH000879

Оригинал: Болховитянов Ю Б, Пчеляков О П, Чикичев С И «Кремний-германиевые эпитаксиальные пленки: физические основы получения напряженных и полностью релаксированных гетероструктур» УФН 171 689–715 (2001); DOI: 10.3367/UFNr.0171.200107a.0689

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