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Conferences and symposia


Molecular beam epitaxy: equipment, devices, technology


Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, prosp. Akad. Lavrenteva 13, Novosibirsk, 630090, Russian Federation
Fulltext pdf (349 KB)
Fulltext is also available at DOI: 10.1070/PU2000v043n09ABEH000790
PACS: 07.07.−a, 81.15.Hi, 85.30.−z (all)
DOI: 10.1070/PU2000v043n09ABEH000790
URL: https://ufn.ru/en/articles/2000/9/d/
000165206800004
Citation: Pchelyakov O P "Molecular beam epitaxy: equipment, devices, technology" Phys. Usp. 43 923–925 (2000)
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Оригинал: Пчеляков О П «Молекулярно-лучевая эпитаксия: оборудование, приборы, технология» УФН 170 993–995 (2000); DOI: 10.3367/UFNr.0170.200009d.0993

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