O.P. Pchelyakov Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, prosp. Akad. Lavrenteva 13, Novosibirsk, 630090, Russian Federation
PT Journal Article
TI Molecular beam epitaxy: equipment, devices, technology
AU Pchelyakov O P
FAU Pchelyakov OP
DP 10 Sep, 2000
TA Phys. Usp.
VI 43
IP 9
PG 923-925
RX 10.1070/PU2000v043n09ABEH000790
URL https://ufn.ru/en/articles/2000/9/d/
SO Phys. Usp. 2000 Sep 10;43(9):923-925