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Molecular beam epitaxy: equipment, devices, technology
Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, prosp. Akad. Lavrenteva 13, Novosibirsk, 630090, Russian Federation
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PACS: 07.07.−a, 81.15.Hi, 85.30.−z ()
DOI: URL: https://ufn.ru/en/articles/2000/9/d/  000165206800004 Citation: Pchelyakov O P "Molecular beam epitaxy: equipment, devices, technology" Phys. Usp. 43 923–925 (2000) Оригинал: Пчеляков О П «Молекулярно-лучевая эпитаксия: оборудование, приборы, технология» УФН 170 993–995 (2000); |
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