Molecular beam epitaxy: equipment, devices, technology

O.P. Pchelyakov
Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, prosp. Akad. Lavrenteva 13, Novosibirsk, 630090, Russian Federation

PACS: 07.07.−a, 81.15.Hi, 85.30.−z (all)
DOI: 10.1070/PU2000v043n09ABEH000790
URL: https://ufn.ru/en/articles/2000/9/d/
Web of Science

000165206800004
Citation: Pchelyakov O P "Molecular beam epitaxy: equipment, devices, technology" Phys. Usp. 43 923–925 (2000)

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TY JOUR
TI Molecular beam epitaxy: equipment, devices, technology
AU Pchelyakov, O. P.
PB Physics-Uspekhi
PY 2000
JO Physics-Uspekhi
JF Physics-Uspekhi
JA Phys. Usp.
VL 43
IS 9
SP 923-925
UR https://ufn.ru/en/articles/2000/9/d/
ER https://doi.org/10.1070/PU2000v043n09ABEH000790

Оригинал: Пчеляков О П «Молекулярно-лучевая эпитаксия: оборудование, приборы, технология» УФН 170 993–995 (2000); DOI: 10.3367/UFNr.0170.200009d.0993