Issues

 / 

1999

 / 

April

←  →

Conferences and symposia


One-electron transistors based on Coulomb blockade and quantum interference

, , ,
Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, prosp. Akad. Lavrenteva 13, Novosibirsk, 630090, Russian Federation
Fulltext pdf (373 KB)
Fulltext is also available at DOI: 10.1070/PU1999v042n04ABEH000458
PACS: 73.23.Hb
DOI: 10.1070/PU1999v042n04ABEH000458
URL: https://ufn.ru/en/articles/1999/4/j/
000080487700010
Citation: Kvon Z D, Litvin L V, Tkachenko V A, Aseev A L "One-electron transistors based on Coulomb blockade and quantum interference" Phys. Usp. 42 402–405 (1999)
BibTexBibNote ® (generic)BibNote ® (RIS)MedlineRefWorks

Оригинал: Квон З Д, Литвин Л В, Ткаченко В А, Асеев А Л «Одноэлектронные транзисторы на основе эффектов кулоновской блокады и квантовой интерференции» УФН 169 471–474 (1999); DOI: 10.3367/UFNr.0169.199904j.0471

References (7) Cited by (12) Similar articles (20) ↓

  1. A.A. Bykov, Z.D. Kvon et al “Quasiballistic quantum interferometer” Phys. Usp. 38 217–219 (1995)
  2. Z.D. Kvon, E.B. Olshanetskii et al “Coulomb-like mesoscopic conductance fluctuations in a 2D electron gas near the filling factor ν = 1/2” Phys. Usp. 41 164–166 (1998)
  3. V.M. Pudalov, S.V. Iordanskii et al “Joint scientific session of the Physical Sciences Division of the Russian Academy of Sciences and the Joint Physical Society of the Russian Federation ’Strongly correlated electrons in two-dimensional systems’ (26 October 2005)” Phys. Usp. 49 203–208 (2006)
  4. V.A. Krupenin, S.V. Lotkhov et al “Sensing of dynamic charge states using single-electron tunneling transistors” Phys. Usp. 41 204–206 (1998)
  5. E.V. Devyatov, A.A. Shashkin et al “Tunneling measurements of the Coulomb pseudogap in a two-dimensional electron system in a quantizing magnetic field” Phys. Usp. 43 285–288 (2000)
  6. D.E. Presnov, V.A. Krupenin, S.V. Lotkhov “Single-electron structures of supersmall Al/AlOx/Al tunnelling junctions: manufacturing techniques and experimental results” Phys. Usp. 39 847–848 (1996)
  7. F.V. Khan, L.V. Filippenko et al “Superconducting terahertz generators” Phys. Usp. 68 584–596 (2025)
  8. J. Koenig, H. Schoeller, G. Schon “Resonant tunneling through a single-electron transistor” Phys. Usp. 41 159–164 (1998)
  9. D.A. Ivanov, M.V. Feigel’man “Coulomb effects in a ballistic one-channel S-S-S device” Phys. Usp. 41 197–201 (1998)
  10. Z.D. Kvon, I.G. Neizvestnyi, V.N. Ovsyuk “Effect of a surface superlattice on a two-dimensional electron gas” Sov. Phys. Usp. 28 528–530 (1985)
  11. E.S. Soldatov, V.V. Khanin et al “Room temperature molecular single-electron transistor” Phys. Usp. 41 202–204 (1998)
  12. M.V. Feigel’man “A quantum bit based on a Josephson contact between conventional and high-temperature superconductors (theory)” Phys. Usp. 42 823–825 (1999)
  13. S.V. Demishev, V.N. Ryzhov, S.M. Stishov “Strongly correlated electron systems and quantum critical phenomena (11 April 2003, Troitsk, Moscow Region)” Phys. Usp. 47 401–407 (2004)
  14. I.A. Shcherbakov “Solid state lasers: a major area of quantum electronics” Phys. Usp. 47 1048–1051 (2004)
  15. A.L. Mikaelyan “From quantum electronics to laser technology (first steps in application)” Phys. Usp. 47 1051–1055 (2004)
  16. M. Pascaud, G. Montambaux “Interference effects in mesoscopic disordered rings and wires” Phys. Usp. 41 182–186 (1998)
  17. A.V. Subashiev “Effective polarized electron emitters based on semiconductor nanostructures” Phys. Usp. 44 1310–1312 (2001)
  18. V.D. Kulakovskii, M. Bayer et al “Excitonic molecules in InGaAs/GaAs quantum dots” Phys. Usp. 41 115–118 (1998)
  19. V.M. Pudalov, S.G. Semenchinskii “A physical standard of the unit of electrical resistance based on the quantum Hall effect” Sov. Phys. Usp. 31 880–881 (1988)
  20. A.D. Zaikin, D.S. Golubev et al “Quantum fluctuations and dissipation in thin superconducting wires” Phys. Usp. 41 226–230 (1998)

The list is formed automatically.

© 1918–2026 Uspekhi Fizicheskikh Nauk
Email: ufn@ufn.ru Editorial office contacts About the journal Terms and conditions