Room temperature molecular single-electron transistor
E.S. Soldatova,
V.V. Khanina,
A.S. Trifonova,
S.P. Gubinb,
V.V. Kolesovc,
D.E. Presnovd,
S.A. Yakovenkoa,
G.V. Khomutova,
A.N. Korotkove aLomonosov Moscow State University, Department of Physics, Leninskie Gory 1 build. 2, Moscow, 119991, Russian Federation bN.S. Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Leninsky prosp. 31, Moscow, 119991, Russian Federation cInstitute of Radio Engineering and Electronics, Russian Academy of Sciences, ul. Mokhovaya 11, Moscow, 125009, Russian Federation dLebedev Physical Institute, Russian Academy of Sciences, Leninsky prosp. 53, Moscow, 119991, Russian Federation eLomonosov Moscow State University, Skobeltsyn Institute of Nuclear Physics, Leninskie Gory 1 build. 2, Moscow, 119991, Russian Federation
PACS:73.40.−c, 74.80.Fp DOI:10.1070/PU1998v041n02ABEH000364 URL: https://ufn.ru/en/articles/1998/2/ab/ Citation: Soldatov E S, Khanin V V, Trifonov A S, Gubin S P, Kolesov V V, Presnov D E, Yakovenko S A, Khomutov G V, Korotkov A N "Room temperature molecular single-electron transistor" Phys. Usp.41 202–204 (1998)