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Room temperature molecular single-electron transistor

 a,  a,  a,  b,  c,  d,  a,  a,  e
a Lomonosov Moscow State University, Department of Physics, Leninskie Gory 1 build. 2, Moscow, 119991, Russian Federation
b N.S. Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Leninsky prosp. 31, Moscow, 119991, Russian Federation
c Institute of Radio Engineering and Electronics, Russian Academy of Sciences, ul. Mokhovaya 11, Moscow, 125009, Russian Federation
d Lebedev Physical Institute, Russian Academy of Sciences, Leninsky prosp. 53, Moscow, 119991, Russian Federation
e Lomonosov Moscow State University, Skobeltsyn Institute of Nuclear Physics, Leninskie Gory 1 build. 2, Moscow, 119991, Russian Federation
PACS: 73.40.−c, 74.80.Fp
DOI: 10.1070/PU1998v041n02ABEH000364
URL: https://ufn.ru/en/articles/1998/2/ab/
Citation: Soldatov E S, Khanin V V, Trifonov A S, Gubin S P, Kolesov V V, Presnov D E, Yakovenko S A, Khomutov G V, Korotkov A N "Room temperature molecular single-electron transistor" Phys. Usp. 41 202–204 (1998)
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Оригинал: Солдатов Е С, Ханин В В, Трифонов А С, Губин С П, Колесов В В, Преснов Д Е, Яковенко С А, Хомутов Г Б, Коротков А Н «Молекулярный одноэлектронный транзистор, работающий при комнатной температуре» УФН 168 217–219 (1998); DOI: 10.3367/UFNr.0168.199802ab.0217

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