L.V. Litvin
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Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences
Address: prosp. Akad. Lavrenteva 13, Novosibirsk, 630090, Russian Federation
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Articles
- Z.D. Kvon, L.V. Litvin, V.A. Tkachenko, A.L. Aseev “One-electron transistors based on Coulomb blockade and quantum interference” 42 402–405 (1999)
- A.A. Bykov, Z.D. Kvon, E.B. Ol’shanskii et al “Quasiballistic quantum interferometer” 38 217–219 (1995)
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See also:
Z.D. Kvon,
A.L. Aseev,
V.L. Ginzburg,
V.A. Tkachenko,
A.A. Bykov,
E.B. Ol’shanskii,
M.R. Baklanov,
Yu.V. Nastaushev,
V.G. Mansurov,
V.P. Migal’,
S.P. Moshchenko,
G.A. Askar’yan,
A.V. Gurevich,
Yu.V. Kopaev,
E.L. Feinberg
PACS: 73.23.Hb, 01.10.Fv, 07.60.Ly
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