One-electron transistors based on Coulomb blockade and quantum interference
Z.D. Kvon,
L.V. Litvin,
V.A. Tkachenko,
A.L. Aseev Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, prosp. Akad. Lavrenteva 13, Novosibirsk, 630090, Russian Federation
PACS: 73.23.Hb DOI:10.1070/PU1999v042n04ABEH000458 URL: https://ufn.ru/en/articles/1999/4/j/ 000080487700010 Citation: Kvon Z D, Litvin L V, Tkachenko V A, Aseev A L "One-electron transistors based on Coulomb blockade and quantum interference" Phys. Usp.42 402–405 (1999)
TY JOUR
TI One-electron transistors based on Coulomb blockade and quantum interference
AU Kvon, Z. D.
AU Litvin, L. V.
AU Tkachenko, V. A.
AU Aseev, A. L.
PB Physics-Uspekhi
PY 1999
JO Physics-Uspekhi
JF Physics-Uspekhi
JA Phys. Usp.
VL 42
IS 4
SP 402-405
UR https://ufn.ru/en/articles/1999/4/j/
ER https://doi.org/10.1070/PU1999v042n04ABEH000458