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One-electron transistors based on Coulomb blockade and quantum interference

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Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, prosp. Akad. Lavrenteva 13, Novosibirsk, 630090, Russian Federation
Fulltext pdf (373 KB)
Fulltext is also available at DOI: 10.1070/PU1999v042n04ABEH000458
PACS: 73.23.Hb
DOI: 10.1070/PU1999v042n04ABEH000458
URL: https://ufn.ru/en/articles/1999/4/j/
000080487700010
Citation: Kvon Z D, Litvin L V, Tkachenko V A, Aseev A L "One-electron transistors based on Coulomb blockade and quantum interference" Phys. Usp. 42 402–405 (1999)
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Оригинал: Квон З Д, Литвин Л В, Ткаченко В А, Асеев А Л «Одноэлектронные транзисторы на основе эффектов кулоновской блокады и квантовой интерференции» УФН 169 471–474 (1999); DOI: 10.3367/UFNr.0169.199904j.0471

References (7) ↓ Cited by (12) Similar articles (14)

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  2. Baksheyev D G, Tkachenko V A Herald Russian Acad. Tech. Sci. 1 (7b) 723 (1994)
  3. Fowler A B "Semiconductor interferometer" US Patent 4550330 (1984)
  4. Washburn S et al. Phys. Rev. B 38 1554 (1988)
  5. Petrov V A, Sandler I M Mikroelektronika 23 (4) 3 (1994)
  6. Bykov A A, Litvin L V, Moshchenko S P Pis’ma ZhETF 61 974 (1995)
  7. Tkachenko V A et al. Physica B 175 75 (1991)

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