One-electron transistors based on Coulomb blockade and quantum interference

Z.D. Kvon, L.V. Litvin, V.A. Tkachenko, A.L. Aseev
Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, prosp. Akad. Lavrenteva 13, Novosibirsk, 630090, Russian Federation

PACS: 73.23.Hb
DOI: 10.1070/PU1999v042n04ABEH000458
URL: https://ufn.ru/en/articles/1999/4/j/
Web of Science

000080487700010
Citation: Kvon Z D, Litvin L V, Tkachenko V A, Aseev A L "One-electron transistors based on Coulomb blockade and quantum interference" Phys. Usp. 42 402–405 (1999)

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PT Journal Article
TI One-electron transistors based on Coulomb blockade and quantum interference
AU Kvon Z D
FAU Kvon ZD
AU Litvin L V
FAU Litvin LV
AU Tkachenko V A
FAU Tkachenko VA
AU Aseev A L
FAU Aseev AL
DP 10 Apr, 1999
TA Phys. Usp.
VI 42
IP 4
PG 402-405
RX 10.1070/PU1999v042n04ABEH000458
URL https://ufn.ru/en/articles/1999/4/j/
SO Phys. Usp. 1999 Apr 10;42(4):402-405

Оригинал: Квон З Д, Литвин Л В, Ткаченко В А, Асеев А Л «Одноэлектронные транзисторы на основе эффектов кулоновской блокады и квантовой интерференции» УФН 169 471–474 (1999); DOI: 10.3367/UFNr.0169.199904j.0471