One-electron transistors based on Coulomb blockade and quantum interference

Z.D. Kvon, L.V. Litvin, V.A. Tkachenko, A.L. Aseev
Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, prosp. Akad. Lavrenteva 13, Novosibirsk, 630090, Russian Federation

PACS: 73.23.Hb
DOI: 10.1070/PU1999v042n04ABEH000458
URL: https://ufn.ru/en/articles/1999/4/j/
Web of Science

000080487700010
Citation: Kvon Z D, Litvin L V, Tkachenko V A, Aseev A L "One-electron transistors based on Coulomb blockade and quantum interference" Phys. Usp. 42 402–405 (1999)

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RT Journal
T1 One-electron transistors based on Coulomb blockade and quantum interference
A1 Kvon,Z.D.
A1 Litvin,L.V.
A1 Tkachenko,V.A.
A1 Aseev,A.L.
PB Physics-Uspekhi
PY 1999
FD 10 Apr, 1999
JF Physics-Uspekhi
JO Phys. Usp.
VO 42
IS 4
SP 402-405
DO 10.1070/PU1999v042n04ABEH000458
LK https://ufn.ru/en/articles/1999/4/j/

Оригинал: Квон З Д, Литвин Л В, Ткаченко В А, Асеев А Л «Одноэлектронные транзисторы на основе эффектов кулоновской блокады и квантовой интерференции» УФН 169 471–474 (1999); DOI: 10.3367/UFNr.0169.199904j.0471