81.10.−h Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation

A.A. Lebedev, P.A. Ivanov et al “SiC-based electronics (100th anniversary of the Ioffe Institute)” Phys. Usp. 62 754–794 (2019)
81.05.ue, 81.10.−h, 85.30.−z (all)
V.P. Filonenko, I.P. Zibrov et al “Diamond-based superhard composites: new synthesis approaches and application prospects” Phys. Usp. 62 207–212 (2019)
81.10.−h, 89.20.Bb (all)
E.A. Ekimov, M.V. Kondrin “Vacancy-impurity centers in diamond: perspectives of synthesis and applications” Phys. Usp. 60 539–558 (2017)
33.15.Pw, 33.50.Dq, 42.50.Ex, 61.46.−w, 61.71.U-, 63.20.kp, 63.20.Pw, 78.55.−m, 81.10.−h (all)
I. Akasaki “Fascinated journeys into blue light” Phys. Usp. 59 (5) (2016)
42.72.Bj, 81.10.−h, 85.60.Dw (all)
H. Amano “Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiation” Phys. Usp. 59 (5) (2016)
42.72.Bj, 81.10.−h, 85.60.Dw (all)
Sh. Nakamura “Background story of the invention of efficient blue InGaN light emitting diodes” Phys. Usp. 59 (5) (2016)
42.72.Bj, 81.10.−h, 85.60.Dw (all)
V.L. Tsymbalenko “Amazing growth of helium crystal facets” Phys. Usp. 58 1059–1073 (2015)
67.80.−s, 81.10.−h (all)
R.A. Khmelnitskiy “Prospects for the synthesis of large single-crystal diamonds” Phys. Usp. 58 134–149 (2015)
68.55.A−, 81.05.ug, 81.10.−h, 82.33.Ya (all)
A.I. Zhmakin “Physical aspects of cryobiology” Phys. Usp. 51 231–252 (2008)
44.05.+e, 81.10.−h, 87.15.Aa, 87.54.Br (all)
N.A. Bendeliani “Hydrothermal growth of stishovite (SiO₂)” Phys. Usp. 45 444–445 (2002)
81.10.−h
V.A. Borodin “Development of new-generation equipment for crystal growth from melt. The RAS Experimental Factory of Scientific Engineering in the novel economic conditions” Phys. Usp. 43 929–931 (2000)
07.90.+c, 81.10.−h, 81.10.Fq (all)
V.I. Aleksandrov, T.T. Basiev et al “Vyacheslav Vasil’evich Osiko (on his 60th birthday)” Sov. Phys. Usp. 35 (4) 339–340 (1992)
01.60.+q, 81.10.−h (all)
L.N. Dem’yanets “High-temperature superconductors: growth of single crystals” Sov. Phys. Usp. 34 (1) 36–73 (1991)
74.72.−h, 74.62.Bf, 81.10.−h, 74.25.Dw, 61.66.Fn (all)
V.B. Timofeev “Current state of semiconductor silicon technology and material science” Sov. Phys. Usp. 33 (6) 492–493 (1990)
01.30.Vv, 85.40.−e, 81.10.−h, 81.15.−z (all)

PACS numbers