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2000

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February

  

Reviews of topical problems


Metastable and bistable defects in silicon

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Institute of Physics and Technology, Almaty, Kazakhstan

Existing data on the properties and structure of metastable and bistable defects in silicon are analyzed. Primary radiation-induced defects (vacancies, self-interstitial atoms, and Frenkel pairs), complexes of oxygen, carbon, hydrogen, and other impurity atoms and defects with negative correlation energy are considered.

Fulltext is available at IOP
PACS: 61.72.−y, 61.72.Tt, 61.80.−x, 71.55.−i (all)
DOI: 10.1070/PU2000v043n02ABEH000649
URL: https://ufn.ru/en/articles/2000/2/b/
Citation: Mukashev B N, Abdullin Kh A, Gorelkinskii Yu V "Metastable and bistable defects in silicon" Phys. Usp. 43 139–150 (2000)
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Оригинал: Мукашев Б Н, Абдуллин Х А, Горелкинский Ю В «Метастабильные и бистабильные дефекты в кремнии» УФН 170 143–155 (2000); DOI: 10.3367/UFNr.0170.200002b.0143

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