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2000

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February

  

Reviews of topical problems


Metastable and bistable defects in silicon

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Institute of Physics and Technology, Almaty, Kazakhstan

Existing data on the properties and structure of metastable and bistable defects in silicon are analyzed. Primary radiation-induced defects (vacancies, self-interstitial atoms, and Frenkel pairs), complexes of oxygen, carbon, hydrogen, and other impurity atoms and defects with negative correlation energy are considered.

Text can be downloaded in Russian. English translation is available on IOP Science.
PACS: 61.72.−y, 61.72.Tt, 61.80.−x, 71.55.−i (all)
DOI: 10.1070/PU2000v043n02ABEH000649
URL: https://ufn.ru/en/articles/2000/2/b/
Citation: Mukashev B N, Abdullin Kh A, Gorelkinskii Yu V "Metastable and bistable defects in silicon" Phys. Usp. 43 139–150 (2000)
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Оригинал: Мукашев Б Н, Абдуллин Х А, Горелкинский Ю В «Метастабильные и бистабильные дефекты в кремнии» УФН 170 143–155 (2000); DOI: 10.3367/UFNr.0170.200002b.0143

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