Straintronics of 2D inorganic materials for electronic and optical applications

I.V. Antonova^†
Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, prosp. Lavrent'eva 13, Novosibirsk, 630090, Russian Federation

Straintronics, being a platform for creating new-generation information processing devices and a physical basis for the development of flexible electronics using two-dimensional (2D) inorganic materials, is currently a rapidly developing field of nanoelectronics. An attractive feature of the new family of 2D crystals is their capacity for deformation and stretching. The use of deformations can lead to remarkable changes in the electronic properties of 2D materials and van der Waals heterostructures based on them and to nonconventional technological and engineering solutions. Deformation engineering as an avenue to explore the potential to adjust the physical properties of materials by controlling elastic deformation fields is ideal for implementation precisely in atomically thin materials and structures.

Keywords: straintronics, graphene, 2D materials, heterostructures, mechanical properties, band gap, electrical properties, photoluminescence, light scattering, light absorption, adjustment of optical properties, local deformations, corrugated monolayers, atomic adsorption, potential applications
PACS: 68.60.Bs, 68.65.Pq, 72.80.Vp, 73.40.−c, 77.65.Ly (all)
DOI: 10.3367/UFNe.2021.05.038984
URL: https://ufn.ru/en/articles/2022/6/b/
Web of Science

001098556400001
Scopus

2-s2.0-85182907895
ADS NASA

2022PhyU...65..567A
Citation: Antonova I V "Straintronics of 2D inorganic materials for electronic and optical applications" Phys. Usp. 65 567–596 (2022)

BibTexBibNote ® (generic)BibNote ® (RIS)MedlineRefWorks

Received: 24th, November 2020, revised: 16th, April 2021, accepted: 3rd, May 2021

Оригинал: Антонова И В «Стрейнтроника двумерных неорганических материалов для электронных и оптических приложений» УФН 192 609–641 (2022); DOI: 10.3367/UFNr.2021.05.038984

References (249) Cited by (6) Similar articles (20) ↓

E.F. Sheka, N.A. Popova, V.A. Popova “Physics and chemistry of graphene. Emergentness, magnetism, mechanophysics and mechanochemistry” 61 645–691 (2018)
P.V. Ratnikov, A.P. Silin “Two-dimensional graphene electronics: current status and prospects” 61 1139–1174 (2018)
A.A. Bukharaev, A.K. Zvezdin et al “Straintronics: a new trend in micro- and nanoelectronics and material science” 61 1175–1212 (2018)
A.E. Galashev, O.R. Rakhmanova “Mechanical and thermal stability of graphene and graphene-based materials” 57 970–989 (2014)
L.A. Chernozatonskii, A.A. Artyukh “Quasi-two-dimensional transition metal dichalcogenides: structure, synthesis, properties and applications” 61 2–28 (2018)
P.B. Sorokin, L.A. Chernozatonskii “Graphene-based semiconductor nanostructures” 56 105–122 (2013)
K.V. Larionov, P.B. Sorokin “Investigation of atomically thin films: state of the art” 64 28–47 (2021)
A.V. Eletskii, I.M. Iskandarova et al “Graphene: fabrication methods and thermophysical properties” 54 227–258 (2011)
D.D. Sukachev “Large quantum networks” 64 1021–1037 (2021)
A.L. Ivanovskii “Magnetic effects induced by sp impurities and defects in nonmagnetic sp materials” 50 1031–1052 (2007)
V.G. Veselago “The electrodynamics of substances with simultaneously negative values of ε and μ” 10 509–514 (1968)
M.A. Semina, R.A. Suris “Localized excitons and trions in semiconductor nanosystems” 65 111–130 (2022)
Yu.B. Bolkhovityanov, O.P. Pchelyakov “GaAs epitaxy on Si substrates: modern status of research and engineering” 51 437–456 (2008)
A.S. Borukhovich “Quantum tunneling in multilayers and heterostructures with ferromagnetic semiconductors” 42 653–667 (1999)
A.P. Pyatakov, A.K. Zvezdin “Magnetoelectric and multiferroic media” 55 557–581 (2012)
L.S. Palatnik, A.I. Il’inskii “Mechanical properties of metallic films” 11 564–581 (1969)
I.V. Antonova, A.I. Ivanov “Wearable noninvasive glucose sensors based on graphene and other carbon materials” 67 (5) (2024)
M.V. Durnev, M.M. Glazov “Excitons and trions in two-dimensional semiconductors based on transition metal dichalcogenides” 61 825–845 (2018)
R.A. Andrievski “High-melting point compounds: new approaches and new results” 60 276–289 (2017)
E.L. Shangina, V.T. Dolgopolov “Quantum phase transitions in two-dimensional systems” 46 777–787 (2003)

The list is formed automatically.