Irina Veniaminovna Antonova



Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences
Address: prosp. Lavrent'eva 13, Novosibirsk, 630090, Russian Federation
Phone: +7 (383) 333 27 66
Fax: +7 (383) 333 27 71
Website:


Articles

  1. I.V. Antonova “2D printing technologies using graphene based materials60 204–218 (2017)
  2. I.V. Antonova “Chemical vapor deposition growth of graphene on copper substrates: current trends56 1013–1020 (2013)

PACS: 68.65.Pq, 73.61.-r, 79.60.Jv, 81.05.ue, 81.15.Gh, 81.16.Be,

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