SiC-based electronics (100th anniversary of the Ioffe Institute)

We review the history and modern state of silicon carbide and SiC-based devices. Main techniques for growing bulk SiC crystals and epitaxial SiC films are discussed. Epitaxial SiC structures used for post-growth processing are briefly reviewed. The state of the art achieved in developing SiC-devices is presented. The main problems that occur in developing SiC-equipment and prospects for designing and developing such equipment are analyzed.

Keywords: silicon carbide, bulk crystals, sublimation, polytypes, lateral overgrowth, dislocations, high-voltage power diodes, high-voltage subnanosecond pulse diodes, thyristors, bipolar junction transistors, analytical models, computer simulations, color center, spin, sensorics, magnetic field, ODMR, graphene, two-dimensional materials, Raman spectroscopy
PACS: 81.05.ue, 81.10.−h, 85.30.−z (all)
DOI: 10.3367/UFNe.2018.10.038437
URL: https://ufn.ru/en/articles/2019/8/c/
Web of Science

000504891900002
Scopus

2-s2.0-85076766922
ADS NASA

2019PhyU...62..754L
Citation: Lebedev A A, Ivanov P A, Levinshtein M E, Mokhov E N, Nagalyuk S S, Anisimov A N, Baranov P G "SiC-based electronics (100th anniversary of the Ioffe Institute)" Phys. Usp. 62 754–794 (2019)

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TY JOUR
TI SiC-based electronics (100th anniversary of the Ioffe Institute)
AU Lebedev, A. A.
AU Ivanov, P. A.
AU Levinshtein, M. E.
AU Mokhov, E. N.
AU Nagalyuk, S. S.
AU Anisimov, A. N.
AU Baranov, P. G.
PB Physics-Uspekhi
PY 2019
JO Physics-Uspekhi
JF Physics-Uspekhi
JA Phys. Usp.
VL 62
IS 8
SP 754-794
UR https://ufn.ru/en/articles/2019/8/c/
ER https://doi.org/10.3367/UFNe.2018.10.038437

Received: 4th, September 2018, revised: 1st, October 2018, accepted: 4th, October 2018

Оригинал: Лебедев А А, Иванов П А, Левинштейн М Е, Мохов Е Н, Нагалюк С С, Анисимов А Н, Баранов П Г «Электроника на основе SiC (к 100-летию Физико-технического института им. А.Ф. Иоффе РАН)» УФН 189 803–848 (2019); DOI: 10.3367/UFNr.2018.10.038437