We review the history and modern state of silicon carbide and SiC-based devices. Main techniques for growing bulk SiC crystals and epitaxial SiC films are discussed. Epitaxial SiC structures used for post-growth processing are briefly reviewed. The state of the art achieved in developing SiC-devices is presented. The main problems that occur in developing SiC-equipment and prospects for designing and developing such equipment are analyzed.
Keywords: silicon carbide, bulk crystals, sublimation, polytypes, lateral overgrowth, dislocations, high-voltage power diodes, high-voltage subnanosecond pulse diodes, thyristors, bipolar junction transistors, analytical models, computer simulations, color center, spin, sensorics, magnetic field, ODMR, graphene, two-dimensional materials, Raman spectroscopy PACS:81.05.ue, 81.10.−h, 85.30.−z (all) DOI:10.3367/UFNe.2018.10.038437 URL: https://ufn.ru/en/articles/2019/8/c/ 000504891900002 2-s2.0-85076766922 2019PhyU...62..754L Citation: Lebedev A A, Ivanov P A, Levinshtein M E, Mokhov E N, Nagalyuk S S, Anisimov A N, Baranov P G "SiC-based electronics (100th anniversary of the Ioffe Institute)" Phys. Usp.62 754–794 (2019)
TI SiC-based electronics (100th anniversary of the Ioffe Institute)
AU Lebedev, A. A.
AU Ivanov, P. A.
AU Levinshtein, M. E.
AU Mokhov, E. N.
AU Nagalyuk, S. S.
AU Anisimov, A. N.
AU Baranov, P. G.
JA Phys. Usp.
Received: 4th, September 2018, revised: 1st, October 2018, accepted: 4th, October 2018