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On the 100th anniversary of the Ioffe Institute of the Russian Academy of Sciences


SiC-based electronics (100th anniversary of the Ioffe Institute)

, , , , , ,
Ioffe Institute, ul. Polytekhnicheskaya 26, St. Petersburg, 194021, Russian Federation

We review the history and modern state of silicon carbide and SiC-based devices. Main techniques for growing bulk SiC crystals and epitaxial SiC films are discussed. Epitaxial SiC structures used for post-growth processing are briefly reviewed. The state of the art achieved in developing SiC-devices is presented. The main problems that occur in developing SiC-equipment and prospects for designing and developing such equipment are analyzed.

Keywords: silicon carbide, bulk crystals, sublimation, polytypes, lateral overgrowth, dislocations, high-voltage power diodes, high-voltage subnanosecond pulse diodes, thyristors, bipolar junction transistors, analytical models, computer simulations, color center, spin, sensorics, magnetic field, ODMR, graphene, two-dimensional materials, Raman spectroscopy
PACS: 81.05.ue, 81.10.−h, 85.30.−z (all)
DOI: 10.3367/UFNe.2018.10.038437
URL: https://ufn.ru/en/articles/2019/8/c/
Citation: Lebedev A A, Ivanov P A, Levinshtein M E, Mokhov E N, Nagalyuk S S, Anisimov A N, Baranov P G "SiC-based electronics (100th anniversary of the Ioffe Institute)" Phys. Usp. 62 754–794 (2019)
BibTexBibNote ® (generic) BibNote ® (RIS)MedlineRefWorks
TY JOUR
TI SiC-based electronics (100th anniversary of the Ioffe Institute)
AU Lebedev, A. A.
AU Ivanov, P. A.
AU Levinshtein, M. E.
AU Mokhov, E. N.
AU Nagalyuk, S. S.
AU Anisimov, A. N.
AU Baranov, P. G.
PB Physics-Uspekhi
PY 2019
JO Physics-Uspekhi
JF Physics-Uspekhi
JA Phys. Usp.
VL 62
IS 8
SP 754-794
UR https://ufn.ru/en/articles/2019/8/c/
ER https://doi.org/10.3367/UFNe.2018.10.038437

Received: 4th, September 2018, revised: 1st, October 2018, 4th, October 2018

Оригинал: Лебедев А А, Иванов П А, Левинштейн М Е, Мохов Е Н, Нагалюк С С, Анисимов А Н, Баранов П Г «Электроника на основе SiC (к 100-летию Физико-технического института им. А.Ф. Иоффе РАН)» УФН 189 803–848 (2019); DOI: 10.3367/UFNr.2018.10.038437

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