Pavel Georgievich Baranov



Ioffe Institute
Address: ul. Polytekhnicheskaya 26, St. Petersburg, 194021, Russian Federation
Fax: (812) 247 1017
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Articles

  1. A.A. Lebedev, P.A. Ivanov, M.E. Levinshtein et alSiC-based electronics (100th anniversary of the Ioffe Institute)62 (8) (2019)
  2. P.G. Baranov, A.M. Kalashnikova, V.I. Kozub et alSpintronics of semiconductor, metallic, dielectric, and hybrid structures (100th anniversary of the Ioffe Institute)62 (8) (2019)
  3. V.A. Soltamov, P.G. Baranov “Radio spectroscopy of the optically aligned spin states of color centers in silicon carbide59 605–610 (2016)

See also: K.P. Belov, V.A. Soltamov, Yu.G. Kusrayev, A.A. Lebedev, D.R. Yakovlev, A.V. Scherbakov, M. Bayer, I.A. Akimov, V.F. Sapega, R.V. Pisarev, V.L. Korenev, V.I. Kozub, A.M. Kalashnikova, A.N. Anisimov, S.S. Nagalyuk

PACS: 85.75.-d, 76.30.-v, 78.47.-p, 75.76.+j, 75.78.Jp, 78.30.Fs, 78.55.Et, 76.70.Hb, 75.30.Kz, 75.50.Bb, 75.50.Gg,

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