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Issue 12, 2024
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On the 100th anniversary of the Ioffe Institute of the Russian Academy of Sciences


SiC-based electronics (100th anniversary of the Ioffe Institute)

, , , , , ,
Ioffe Institute, ul. Polytekhnicheskaya 26, St. Petersburg, 194021, Russian Federation

We review the history and modern state of silicon carbide and SiC-based devices. Main techniques for growing bulk SiC crystals and epitaxial SiC films are discussed. Epitaxial SiC structures used for post-growth processing are briefly reviewed. The state of the art achieved in developing SiC-devices is presented. The main problems that occur in developing SiC-equipment and prospects for designing and developing such equipment are analyzed.

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Fulltext is also available at DOI: 10.3367/UFNe.2018.10.038437
Keywords: silicon carbide, bulk crystals, sublimation, polytypes, lateral overgrowth, dislocations, high-voltage power diodes, high-voltage subnanosecond pulse diodes, thyristors, bipolar junction transistors, analytical models, computer simulations, color center, spin, sensorics, magnetic field, ODMR, graphene, two-dimensional materials, Raman spectroscopy
PACS: 81.05.ue, 81.10.−h, 85.30.−z (all)
DOI: 10.3367/UFNe.2018.10.038437
URL: https://ufn.ru/en/articles/2019/8/c/
000504891900002
2-s2.0-85076766922
2019PhyU...62..754L
Citation: Lebedev A A, Ivanov P A, Levinshtein M E, Mokhov E N, Nagalyuk S S, Anisimov A N, Baranov P G "SiC-based electronics (100th anniversary of the Ioffe Institute)" Phys. Usp. 62 754–794 (2019)
BibTexBibNote ® (generic)BibNote ® (RIS)MedlineRefWorks

Received: 4th, September 2018, revised: 1st, October 2018, 4th, October 2018

Оригинал: Лебедев А А, Иванов П А, Левинштейн М Е, Мохов Е Н, Нагалюк С С, Анисимов А Н, Баранов П Г «Электроника на основе SiC (к 100-летию Физико-технического института им. А.Ф. Иоффе РАН)» УФН 189 803–848 (2019); DOI: 10.3367/UFNr.2018.10.038437

References (239) Cited by (15) ↓ Similar articles (1)

  1. Zainutdinov D I, Voronkov R A et al J. Surf. Investig. 18 683 (2024)
  2. Lebedev A A, Sakharov A V et al Semiconductors 58 433 (2024)
  3. Guo N, Pei Y et al 2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS), (2023) p. 6
  4. Davydov S Yu, Posrednik O V Semiconductors 57 100 (2023)
  5. Guo N, Pei Y et al Crystals 13 1123 (2023)
  6. Mokhov E N, Davydov V Yu et al Semiconductors 57 483 (2023)
  7. Lebedev A A, Kozlovski V V et al Semiconductors 57 239 (2023)
  8. Lebedev A A, Kozlovski V V et al Semiconductors 56 189 (2022)
  9. Kohn V G, Argunova T S Physica Status Solidi (b) 259 (4) (2022)
  10. Levinshtein M E, Lebedev A A et al Solid-State Electronics 196 108405 (2022)
  11. Argunova T S, Kohn V G Materials 15 856 (2022)
  12. Yurov V Yu, Ralchenko V G et al 39 (2) (2021)
  13. Grossner U, Grillenberger J K et al Wide Bandgap Semiconductors for Power Electronics 1 (2021) p. 137
  14. Davydov S Yu, Posrednik O V Semiconductors 55 399 (2021)
  15. Ivanov P A, Samsonova T P et al J. Commun. Technol. Electron. 65 956 (2020)
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