On the 100th anniversary of the Ioffe Institute of the Russian Academy of Sciences

SiC-based electronics (100th anniversary of the Ioffe Institute)

, , , , , ,
Ioffe Institute, ul. Polytekhnicheskaya 26, St. Petersburg, 194021, Russian Federation

We review the history and modern state of silicon carbide and SiC-based devices. Main techniques for growing bulk SiC crystals and epitaxial SiC films are discussed. Epitaxial SiC structures used for post-growth processing are briefly reviewed. The state of the art achieved in developing SiC-devices is presented. The main problems that occur in developing SiC-equipment and prospects for designing and developing such equipment are analyzed.

Fulltext pdf (4.4 MB)
Fulltext is also available at DOI: 10.3367/UFNe.2018.10.038437
Keywords: silicon carbide, bulk crystals, sublimation, polytypes, lateral overgrowth, dislocations, high-voltage power diodes, high-voltage subnanosecond pulse diodes, thyristors, bipolar junction transistors, analytical models, computer simulations, color center, spin, sensorics, magnetic field, ODMR, graphene, two-dimensional materials, Raman spectroscopy
PACS: 81.05.ue, 81.10.−h, 85.30.−z (all)
DOI: 10.3367/UFNe.2018.10.038437
Citation: Lebedev A A, Ivanov P A, Levinshtein M E, Mokhov E N, Nagalyuk S S, Anisimov A N, Baranov P G "SiC-based electronics (100th anniversary of the Ioffe Institute)" Phys. Usp. 62 754–794 (2019)
BibTexBibNote ® (generic)BibNote ® (RIS)MedlineRefWorks

Received: 4th, September 2018, revised: 1st, October 2018, 4th, October 2018

Оригинал: Лебедев А А, Иванов П А, Левинштейн М Е, Мохов Е Н, Нагалюк С С, Анисимов А Н, Баранов П Г «Электроника на основе SiC (к 100-летию Физико-технического института им. А.Ф. Иоффе РАН)» УФН 189 803–848 (2019); DOI: 10.3367/UFNr.2018.10.038437

References (239) Cited by (9) ↓ Similar articles (1)

  1. Guo N, Pei Y et al Crystals 13 1123 (2023)
  2. Lebedev A A, Kozlovski V V et al Semiconductors 56 189 (2022)
  3. Kohn V G, Argunova T S Physica Status Solidi (b) 259 (4) (2022)
  4. Levinshtein M E, Lebedev A A et al Solid-State Electronics 196 108405 (2022)
  5. Argunova T S, Kohn V G Materials 15 856 (2022)
  6. Yurov V Yu, Ralchenko V G et al 39 (2) (2021)
  7. Grossner U, Grillenberger J K et al Wide Bandgap Semiconductors for Power Electronics 1 (2021) p. 137
  8. Davydov S Yu, Posrednik O V Semiconductors 55 399 (2021)
  9. Ivanov P A, Samsonova T P et al J. Commun. Technol. Electron. 65 956 (2020)

© 1918–2023 Uspekhi Fizicheskikh Nauk
Email: Editorial office contacts About the journal Terms and conditions