SiC-based electronics (100th anniversary of the Ioffe Institute)

We review the history and modern state of silicon carbide and SiC-based devices. Main techniques for growing bulk SiC crystals and epitaxial SiC films are discussed. Epitaxial SiC structures used for post-growth processing are briefly reviewed. The state of the art achieved in developing SiC-devices is presented. The main problems that occur in developing SiC-equipment and prospects for designing and developing such equipment are analyzed.

Keywords: silicon carbide, bulk crystals, sublimation, polytypes, lateral overgrowth, dislocations, high-voltage power diodes, high-voltage subnanosecond pulse diodes, thyristors, bipolar junction transistors, analytical models, computer simulations, color center, spin, sensorics, magnetic field, ODMR, graphene, two-dimensional materials, Raman spectroscopy
PACS: 81.05.ue, 81.10.−h, 85.30.−z (all)
DOI: 10.3367/UFNe.2018.10.038437
URL: https://ufn.ru/en/articles/2019/8/c/
Web of Science

000504891900002
Scopus

2-s2.0-85076766922
ADS NASA

2019PhyU...62..754L
Citation: Lebedev A A, Ivanov P A, Levinshtein M E, Mokhov E N, Nagalyuk S S, Anisimov A N, Baranov P G "SiC-based electronics (100th anniversary of the Ioffe Institute)" Phys. Usp. 62 754–794 (2019)

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%0 Journal Article
%T SiC-based electronics (100th anniversary of the Ioffe Institute)
%A A. A. Lebedev
%A P. A. Ivanov
%A M. E. Levinshtein
%A E. N. Mokhov
%A S. S. Nagalyuk
%A A. N. Anisimov
%A P. G. Baranov
%I Physics-Uspekhi
%D 2019
%J Phys. Usp.
%V 62
%N 8
%P 754-794
%U https://ufn.ru/en/articles/2019/8/c/
%U https://doi.org/10.3367/UFNe.2018.10.038437

Received: 4th, September 2018, revised: 1st, October 2018, accepted: 4th, October 2018

Оригинал: Лебедев А А, Иванов П А, Левинштейн М Е, Мохов Е Н, Нагалюк С С, Анисимов А Н, Баранов П Г «Электроника на основе SiC (к 100-летию Физико-технического института им. А.Ф. Иоффе РАН)» УФН 189 803–848 (2019); DOI: 10.3367/UFNr.2018.10.038437