GaAs epitaxy on Si substrates: modern status of research and engineering

Yu.B. Bolkhovityanov, O.P. Pchelyakov
Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, prosp. Akad. Lavrenteva 13, Novosibirsk, 630090, Russian Federation

While silicon and gallium arsenide are dominant materials in modern micro- and nanoelectronics, devices fabricated from them still use Si and GaAs substrates only separately. Integrating these materials on the (highest efficiency) substrate of Si has been the subject of much research effort for more than twenty years. This review systematizes and generalizes the current understanding of the fundamental physical mechanisms governing the epitaxial growth of GaAs and its related III-V compounds on Si substrates. Basic techniques available for improving the quality of such heterostructures are described, and recent advances in fabricating device-quality A^IIIB^V/Si heterostructures and devices on their bases are also presented.

PACS: 61.72.Lk, 62.25.−g, 81.05.Cy, 81.05.Ea, 81.15.−z, 85.40.Sz (all)
DOI: 10.1070/PU2008v051n05ABEH006529
URL: https://ufn.ru/en/articles/2008/5/b/
Web of Science

000259376200002
Scopus

2-s2.0-51549109577
ADS NASA

2008PhyU...51..437B
Citation: Bolkhovityanov Yu B, Pchelyakov O P "GaAs epitaxy on Si substrates: modern status of research and engineering" Phys. Usp. 51 437–456 (2008)

BibTexBibNote ® (generic)BibNote ® (RIS)MedlineRefWorks

Оригинал: Болховитянов Ю Б, Пчеляков О П «Эпитаксия GaAs на кремниевых подложках: современное состояние исследований и разработок» УФН 178 459–480 (2008); DOI: 10.3367/UFNr.0178.200805b.0459

References (231) Cited by (218) Similar articles (20) ↓

A.A. Shklyaev, M. Ichikawa “Extremely dense arrays of germanium and silicon nanostructures” 51 133–161 (2008)
Yu.B. Bolkhovityanov, O.P. Pchelyakov, S.I. Chikichev “Silicon-germanium epilayers: physical fundamentals of growing strained and fully relaxed heterostructures” 44 655–680 (2001)
A.D. Pogrebnjak, A.P. Shpak et al “Structures and properties of hard and superhard nanocomposite coatings” 52 29–54 (2009)
I.V. Antonova “Straintronics of 2D inorganic materials for electronic and optical applications” 65 567–596 (2022)
R.A. Andrievski, A.M. Glezer “Strength of nanostructures” 52 315 (2009)
G.A. Malygin “Strength and plasticity of nanocrystalline materials and nanosized crystals” 54 1091–1116 (2011)
V.I. Boiko, A.N. Valyaev, A.D. Pogrebnyak “Metal modification by high-power pulsed particle beams” 42 1139–1166 (1999)
A.D. Pogrebnyak, M.A. Lisovenko et al “Protective coatings with nanoscale multilayer architecture: current state and main trends” 64 253–279 (2021)
M.A. Semina, R.A. Suris “Localized excitons and trions in semiconductor nanosystems” 65 111–130 (2022)
R.I. Garber, I.A. Gindin “Physics of the strength of crystalline materials” 3 41–77 (1960)
R.Z. Bakhtizin, Q.-Zh. Xue et al “Scanning tunneling microscopy studies of III-nitride thin film heteroepitaxial growth” 47 371–391 (2004)
V.Ya. Pokrovskii, S.G. Zybtsev et al “High-frequency, ’quantum’ and electromechanical effects in quasi-one-dimensional charge density wave conductors” 56 29–48 (2013)
R.A. Andrievski “Metallic nano/microglasses: new approaches in nanostructured materials science” 56 261–268 (2013)
A.M. Zheltikov “The Raman effect in femto- and attosecond physics” 54 29–51 (2011)
S.A. Kukushkin, A.V. Osipov “Thin-film condensation processes” 41 983–1014 (1998)
E.F. Sheka, N.A. Popova, V.A. Popova “Physics and chemistry of graphene. Emergentness, magnetism, mechanophysics and mechanochemistry” 61 645–691 (2018)
V.B. Shikin, Yu.V. Shikina “Charged dislocations in semiconductor crystals” 38 845–875 (1995)
G.N. Makarov “Laser applications in nanotechnology: nanofabrication using laser ablation and laser nanolithography” 56 643–682 (2013)
A.I. Olemskoi, I.A. Sklyar “Evolution of the defect structure of a solid during plastic deformation” 35 (6) 455–480 (1992)
A.I. Gusev “Nonstoichiometry and superstructures” 57 839–876 (2014)

The list is formed automatically.