RSS feeds
РусскийEnglish
Issue 11, 2024
Volume year page
Issues Authors PACS Subscription For authors

Issues

 / 

2008

 / 

May

←  →

Reviews of topical problems


GaAs epitaxy on Si substrates: modern status of research and engineering

,
Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, prosp. Akad. Lavrenteva 13, Novosibirsk, 630090, Russian Federation

While silicon and gallium arsenide are dominant materials in modern micro- and nanoelectronics, devices fabricated from them still use Si and GaAs substrates only separately. Integrating these materials on the (highest efficiency) substrate of Si has been the subject of much research effort for more than twenty years. This review systematizes and generalizes the current understanding of the fundamental physical mechanisms governing the epitaxial growth of GaAs and its related III-V compounds on Si substrates. Basic techniques available for improving the quality of such heterostructures are described, and recent advances in fabricating device-quality AIIIBV/Si heterostructures and devices on their bases are also presented.

Fulltext pdf (525 KB)
Fulltext is also available at DOI: 10.1070/PU2008v051n05ABEH006529
PACS: 61.72.Lk, 62.25.−g, 81.05.Cy, 81.05.Ea, 81.15.−z, 85.40.Sz (all)
DOI: 10.1070/PU2008v051n05ABEH006529
URL: https://ufn.ru/en/articles/2008/5/b/
000259376200002
2-s2.0-51549109577
2008PhyU...51..437B
Citation: Bolkhovityanov Yu B, Pchelyakov O P "GaAs epitaxy on Si substrates: modern status of research and engineering" Phys. Usp. 51 437–456 (2008)
BibTexBibNote ® (generic)BibNote ® (RIS)MedlineRefWorks

Оригинал: Болховитянов Ю Б, Пчеляков О П «Эпитаксия GaAs на кремниевых подложках: современное состояние исследований и разработок» УФН 178 459–480 (2008); DOI: 10.3367/UFNr.0178.200805b.0459

References (231) ↓ Cited by (224) Similar articles (20)

  1. Wang W I Appl. Phys. Lett. 44 1149 (1984)
  2. Fischer R et al. J. Appl. Phys. 58 374 (1985)
  3. Iles P A et al. IEEE Electron. Device Lett. 11 140 (1990)
  4. Chen J C et al. J. Electron. Mater. 21 347 (1992)
  5. Masselink W T et al. Appl. Phys. Lett. 45 1309 (1984)
  6. Tsaur B-Y, Metze G M Appl. Phys. Lett. 45 535 (1984)
  7. Uppal P N, Kroemer H J. Appl. Phys. 58 2195 (1985)
  8. Akiyama M, Kawarada Y, Kaminishi K Jpn. J. Appl. Phys. 23 L843 (1984)
  9. Fischer R et al. Appl. Phys. Lett. 47 397 (1985)
  10. Soga T et al. J. Appl. Phys. 57 4578 (1985)
  11. Fischer R et al. J. Appl. Phys. 60 1640 (1986)
  12. Lee J W et al. Appl. Phys. Lett. 50 31 (1987)
  13. Yamaguchi M, Nishioka T, Sugo M Appl. Phys. Lett. 54 24 (1989)
  14. Yamaguchi M, Sugo M, Itoh Y Appl. Phys. Lett. 54 2568 (1989)
  15. Yamaguchi M J. Mater. Res. 6 376 (1991)
  16. Fang S F et al. J. Appl. Phys. 68 R31 (1990)
  17. Chadi D J Phys. Rev. Lett. 43 43 (1979)
  18. Voigtländer B et al. Phys. Rev. Lett. 78 2164 (1997)
  19. Chadi D J J. Vac. Sci. Technol. A 5 834 (1987)
  20. Olshanetsky B Z, Shklyaev A A Surf. Sci. 82 445 (1979)
  21. Bringans R D, Biegelsen D K, Swartz L-E Phys. Rev. B 44 3054 (1991)
  22. Joshkin V et al. J. Cryst. Growth 147 13 (1995)
  23. Tachikawa M et al. Jpn. J. Appl. Phys. L1252 (1993)
  24. Hao M S et al. Jpn. J. Appl. Phys. L900 (1995)
  25. Taylor P J et al. J. Appl. Phys. 89 4365 (2001)
  26. Akahori K et al. Solar Energy Mater. Solar Cells 66 593 (2001)
  27. Vinokurov D A i dr. Fiz. Tekh. Poluprovodn. 25 1022 (1991); Vinokurov D A et al. Sov. Phys. Semicond. 25 617 (1991)
  28. Uen W-Y et al. J. Cryst. Growth 295 103 (2006)
  29. Ma K et al. IEEE J. Quantum Electron. 40 800 (2004)
  30. Ackaert A et al. J. Cryst. Growth 107 822 (1991)
  31. Chand N et al. J. Appl. Phys. 67 2343 (1990)
  32. Mori H et al. Appl. Phys. Lett. 63 1963 (1993)
  33. Yodo T, Tamura M J. Vac. Sci. Technol. B 13 1000 (1995)
  34. Uen W-Y, Ohori T, Nishinaga T J. Cryst. Growth 156 133 (1995)
  35. Takano Y et al. Appl. Phys. Lett. 73 2917 (1998)
  36. Kakinuma H et al. J. Cryst. Growth 205 25 (1999)
  37. Luo G-L et al. J. Appl. Phys. 101 084501 (2007)
  38. Arokiaraj J et al. Appl. Phys. Lett. 75 3826 (1999)
  39. Zimmermann G et al. J. Cryst. Growth 124 136 (1992)
  40. Biegelsen D K et al. J. Appl. Phys. 61 1856 (1987)
  41. Hull R et al. Appl. Phys. Lett. 51 1723 (1987)
  42. Tournié E, Ploog K H J. Cryst. Growth 135 97 (1994)
  43. Stranski I N, Krastanov L Sitzungber. Akad. Wiss. Math.-Naturwiss. Kl. Abt. 2. 146 797 (1938)
  44. Lüth H Appl. Surf. Sci. 130-132 855 (1998)
  45. Nötzel R Semicond. Sci. Technol. 11 1365 (1996)
  46. Chen Y, Washburn J Phys. Rev. Lett. 77 4046 (1996)
  47. Asaro R J, Tiller W A Metall. Trans. 3 1789 (1972)
  48. Grinfel’d M A Dokl. Akad. Nauk SSSR 290 1358 (1986); Grinfel’d M A Sov. Phys. Dokl. 31 831 (1986)
  49. Politi P et al. Phys. Rep. 324 271 (2000)
  50. Seifert W et al. Prog. Cryst. Growth Charact. Mater. 33 423 (1996)
  51. Pchelyakov O P i dr. Fiz. Tekh. Poluprovodn. 34 1281 (2000); Pchelyakov O P et al. Semicond. 34 1229 (2000)
  52. Aleksandrov L N et al. J. Cryst. Growth 298 (1974)
  53. Asai M, Ueba H, Tatsuyama C J. Appl. Phys. 58 2577 (1985)
  54. Westwood D I et al. J. Vac. Sci. Technol. B 16 2358 (1998)
  55. Adomi K et al. J. Appl. Phys. 69 220 (1991)
  56. Asai K, Kamei K, Katahama H Appl. Phys. Lett. 71 701 (1997)
  57. Finnie P, Homma Y Phys. Rev. B 59 15240 (1999)
  58. Soutadé J, Fontaine C, Muñoz-Yagüe A Appl. Phys. Lett. 59 1764 (1991)
  59. Lioutas Ch B, Delimitisi A, Georgakilas A Thin Solid Films 336 96 (1998)
  60. Chriqui Y et al. J. Cryst. Growth 265 53 (2004)
  61. Mori H et al. Appl. Phys. Lett. 51 1245 (1987)
  62. Bi W G, Mei X B, Tu C W J. Cryst. Growth 164 256 (1996)
  63. Komatsu Y et al. Jpn. J. Appl. Phys. 36 5425 (1997)
  64. Sadeghi M, Wang S J. Cryst. Growth 227-228 279 (2001)
  65. Kitahara K et al. Jpn. J. Appl. Phys. 29 L2457 (1990)
  66. Horikoshi Y, Kawashima M J. Cryst. Growth 95 17 (1989)
  67. Tsai H L, Kao Y C J. Appl. Phys. 67 2862 (1990)
  68. Usui H, Yasuda H, Mori H Appl. Phys. Lett. 89 173127 (2006)
  69. LeGoues F K et al. Phys. Rev. Lett. 73 300 (1994)
  70. Guha S, Madhukar A, Rajkumar K C Appl. Phys. Lett. 57 2110 (1990)
  71. Chen Y et al. Appl. Phys. Lett. 68 111 (1996)
  72. Trampert A, Tournié E, Ploog K H J. Cryst. Growth 146 368 (1995)
  73. Johnson H T, Freund L B J. Appl. Phys. 81 6081 (1997)
  74. Spencer B J, Tersoff J Appl. Phys. Lett. 77 2533 (2000)
  75. Stowell M, in Epitaxial Growth Pt. B (Materials Science and Technology, Ed. J W Matthews) (New York: Academic Press, 1975) p. 437, Ch. 5
  76. Castagné J et al. J. Appl. Phys. 64 2372 (1988)
  77. Nannarone S, Pedio M Surf. Sci. Rep. 51 1 (2003)
  78. Picard E et al. Appl. Phys. Lett. 75 677 (1999)
  79. Kafader U, Sirringhaus H, von Känel H Appl. Surf. Sci. 90 297 (1995)
  80. Lambert A D et al. Semicond. Sci. Technol. 14 L1 (1999)
  81. Asai K et al. Appl. Surf. Sci. 153 134 (2000)
  82. Su C et al. Surf. Sci. 445 139 (2000)
  83. Kahng S-J et al. J. Vac. Sci. Technol. A 15 927 (1997)
  84. Chun Y J, Okada Y, Kawabe M J. Cryst. Growth 150 497 (1995)
  85. Sakai A, Tatsumi T Appl. Phys. Lett. 64 52 (1994)
  86. Spila T et al. J. Appl. Phys. 91 3579 (2002)
  87. Copel M, Tromp R M Appl. Phys. Lett. 58 2648 (1991)
  88. Sugii N et al. J. Vac. Sci. Technol. B 18 1724 (2000)
  89. Kahng S-J et al. Appl. Phys. Lett. 77 981 (2000)
  90. LaPierre R R, Robinson B J, Thompson D A J. Cryst. Growth 191 319 (1998)
  91. Okada M et al. J. Cryst. Growth 188 119 (1998)
  92. Okada Y, Shimomura H, Kawabe M J. Appl. Phys. 73 7376 (1993)
  93. ShimizuY, Okada Y J. Cryst. Growth 265 99 (2004)
  94. Neave J H et al. J. Vac. Sci. Technol. B 1 668 (1983)
  95. Cho N-H et al. Appl. Phys. Lett. 47 879 (1985)
  96. Mizuguchi K et al. J. Cryst. Growth 77 509 (1986)
  97. Strite S et al. J. Vac. Sci. Technol. B 8 1131 (1990)
  98. Gutakovskii A K i dr. Pis’ma ZhTF 24 (24) 7 (1998); Gutakovskii A K et al. Tech. Phys. Lett. 24 949 (1998)
  99. Abrahams M S et al. J. Mater. Sci. 4 223 (1969)
  100. Burd J W Trans. Metall. Soc. AIME 245 571 (1969)
  101. Fitzgerald E A et al. Appl. Phys. Lett. 59 811 (1991)
  102. Samavedam S B, Fitzgerald E A J. Appl. Phys. 81 3108 (1997)
  103. Currie M T et al. Appl. Phys. Lett. 72 1718 (1998)
  104. Samavedam S B et al. Appl. Phys. Lett. 73 2125 (1998)
  105. Lee M L et al. J. Appl. Phys. 97 011101 (2005)
  106. Groenert M E et al. J. Appl. Phys. 93 362 (2003)
  107. Hartmann J M et al. Semicond. Sci. Technol. 15 362 (2000)
  108. Hartmann J M et al. Semicond. Sci. Technol. 15 370 (2000)
  109. Hartmann J M et al. Semicond. Sci. Technol. 19 311 (2004)
  110. Bogumilowicz Y et al. J. Cryst. Growth 290 523 (2006)
  111. Rosenblad C et al. J. Vac. Sci. Technol. A 16 2785 (1998)
  112. Rosenblad C et al. Appl. Phys. Lett. 76 427 (2000)
  113. Kummer M et al. Mater. Sci. Eng. B 89 288 (2002)
  114. Thomas S G et al. J. Electron. Mater. 32 976 (2003)
  115. Isella G et al. Solid-State Electron. 48 1317 (2004)
  116. Chrastina D et al. J. Cryst. Growth 281 281 (2005)
  117. Pin G et al. J. Cryst. Growth 286 11 (2006)
  118. Ramm J, von Kaenel H IEICE Trans. Electron. E Ser. C 86 1935 (2003)
  119. Bolkhovityanov Yu B et al. J. Cryst. Growth 297 57 (2006)
  120. Sieg R M et al. Appl. Phys. Lett. 73 3111 (1998)
  121. Sieg R M et al. J. Vac. Sci. Technol. B 16 1471 (1998)
  122. Carlin J A et al. Appl. Phys. Lett. 76 1884 (2000)
  123. Ting S M, Fitzgerald E A J. Appl. Phys. 87 2618 (2000)
  124. Carlin J A et al. Prog. Photovoltaics 8 323 (2000)
  125. Andre C L et al. Appl. Phys. Lett. 84 3447 (2004)
  126. Olson J M et al. J. Cryst. Growth 77 515 (1986)
  127. Takagi Y et al. J. Cryst. Growth 150 677 (1995)
  128. Tsuji T, Yonezu H, Ohshima N J. Vac. Sci. Technol. B 22 1428 (2004)
  129. Geisz J F et al., in 2006 IEEE 4th World Conf. on Photovoltaic Energy Conversion, Waikoloa, Hawaii, May 7 – 12, 2006: WCPEC-4 (Piscataway, NJ: IEEE, 2006)
  130. Komatsu Y et al. Jpn. J. Appl. Phys. 36 5425 (1997)
  131. Tsaur B-Y et al. Appl. Phys. Lett. 38 779 (1981)
  132. Sheldon P et al. Appl. Phys. Lett. 45 274 (1984)
  133. Sheldon P et al. J. Appl. Phys. 58 4186 (1985)
  134. Chang E Y et al. J. Electron. Mater. 34 23 (2005)
  135. Seifert W et al. Prog. Cryst. Growth Charact. Mater. 33 423 (1996)
  136. Eaglesham D J, Cerullo M Phys. Rev. Lett. 64 1943 (1990)
  137. Luan H-C et al. Appl. Phys. Lett. 75 2909 (1999)
  138. Colace L et al. Appl. Phys. Lett. 76 1231 (2000)
  139. Halbwax M et al. J. Appl. Phys. 97 064907 (2005)
  140. Liu J et al. J. Appl. Phys. 96 916 (2004)
  141. Sakai A, Tatsumi T Appl. Phys. Lett. 64 52 (1994)
  142. Dentel D et al. Surf. Sci. 402-404 211 (1998)
  143. Kahng S-J et al. Phys. Rev. Lett. 80 4931 (1998)
  144. Kahng S-J et al. Phys. Rev. B 61 10827 (2000)
  145. Portavoce A et al. Phys. Rev. B 69 155414 (2004)
  146. Horn-von Hoegen M, Müller B H, Al-Falou A Phys. Rev. B 50 11640 (1994)
  147. Schmidt Th et al. Appl. Phys. Lett. 86 111910 (2005)
  148. LeGoues F K et al. Phys. Rev. B 44 12894 (1991)
  149. Horn-von Hoegen M et al. Surf. Sci. 298 29 (1993)
  150. Horn-von Hoegen M et al. Phys. Rev. Lett. 67 1130 (1991)
  151. Horn-von Hoegen M et al. Phys. Rev. B 50 10811 (1994)
  152. Eaglesham D J et al. Phys. Rev. Lett. 70 1643 (1993)
  153. Osten H J et al. Phys. Rev. Lett. 69 450 (1992)
  154. Thornton J M C et al. Surf. Sci. 273 1 (1992)
  155. Wietler T F, Bugiel E, Hofmann K R Appl. Phys. Lett. 87 182102 (2005)
  156. Wietler T F, Bugiel E, Hofmann K R Thin Solid Films 508 6 (2006)
  157. Bauer M et al. Appl. Phys. Lett. 81 2992 (2002)
  158. Roucka R et al. Appl. Phys. Lett. 86 191912 (2005)
  159. Tolle J et al. Appl. Phys. Lett. 88 252112 (2006)
  160. "Motorola and IQE grow GaAs on large-area Si substrates" Compound Semicond. 7 (9) 47 (2001)
  161. Yu Z et al. J. Vac. Sci. Technol. B 18 2139 (2000); Yu Z et al. "GaAs-Based heterostructures on silicon" GaAs Mantech Conf., April 8 – 11, 2002, San Diego, Calif., USA
  162. Eisenbeiser K et al. IEEE Electron. Device Lett. 23 300 (2002)
  163. Droopad R et al. J. Cryst. Growth 251 638 (2003)
  164. Chediak A, Scott K, Zhang P TICS 4, Prof. Sands, MSE 225 April 12 (2002)
  165. Wright S L, Kroemer H, Inada M J. Appl. Phys. 55 2916 (1984)
  166. Mori H et al. Appl. Phys. Lett. 51 1245 (1987)
  167. Suzuki T et al. Jpn. J. Appl. Phys. 31 2079 (1992)
  168. Bi W G, Mei X B, Tu C W J. Cryst. Growth 164 256 (1996)
  169. Takagi Y et al. J. Cryst. Growth 187 42 (1998)
  170. Dixit V K et al. J. Cryst. Growth 293 5 (2006)
  171. Yu X et al. J. Vac. Sci. Technol. B 22 1450 (2004)
  172. Tsuji T et al. Jpn. J. Appl. Phys. 36 5431 (1997)
  173. Kunert B et al., in 5th Intern. Conf. on Silicon Epitaxy and Heterostructures (ICSI-5), May 20 – 25, 2007, Marseille, France, Abstracts p. 178
  174. Kästner G, Gösele U, Tan T Y Appl. Phys. A 66 13 (1998)
  175. Brown A S J. Vac. Sci. Technol. B 16 2308 (1998)
  176. Bourret A Appl. Surf. Sci. 164 3 (2000)
  177. Kästner G, Gösele U J. Appl. Phys. 88 4048 (2000)
  178. Vanhollebeke K et al. Prog. Cryst. Growth Charact. Mater. 41 1 (2000)
  179. Bolkhovityanov Yu B, Pchelyakov O P, Chikichev S I Usp. Fiz. Nauk 171 689 (2001); Bolkhovityanov Yu B, Pchelyakov O P, Chikichev S I Phys. Usp. 44 655 (2001)
  180. Bolkhovityanov Yu B, Pchelyakov O P, Sokolov L V, Chikichev S I Fiz. Tekh. Poluprovodn. 37 513 (2003); Bolkhovityanov Yu B, Pchelyakov O P, Sokolov L V, Chikichev S I Semicond. 37 493 (2003)
  181. Brunner K et al. Thin Solid Films 321 245 (1998)
  182. Pei C W et al. J. Appl. Phys. 90 5959 (2001)
  183. Sridhar N, Srolovitz D J, Suo Z Appl. Phys. Lett. 78 2482 (2001)
  184. Yin H et al. J. Appl. Phys. 91 9716 (2002)
  185. Yu C-Y et al. J. Appl. Phys. 100 063510 (2006)
  186. Rehder E M et al. J. Appl. Phys. 94 7892 (2003)
  187. Tezuka T et al. Appl. Phys. Lett. 80 3560 (2002)
  188. Alexander H, in Dislocations In Solids Vol. 7 (Ed. F R N Nabarro) (New York: Elsevier, 1986) p. 113
  189. Fischer A, Richter H Appl. Phys. Lett. 64 1218 (1994)
  190. Yonenaga I Phys. Status Solidi A 171 41 (1999)
  191. Houghton D C J. Appl. Phys. 70 2136 (1991)
  192. Gillard V T, Nix W D, Freund L B J. Appl. Phys. 76 7280 (1994)
  193. Hirth J P, Lothe J Theory Of Dislocations 2nd ed. (New York: Wiley, 1982)
  194. Hull R et al. Appl. Phys. Lett. 65 327 (1994)
  195. Hull R et al. Phys. Rev. B 40 1681 (1989)
  196. Jain S C et al. J. Appl. Phys. 87 965 (2000)
  197. Hull R et al. J. Appl. Phys. 70 2052 (1991)
  198. Seaford M L et al. J. Electron. Mater. 29 906 (2000)
  199. Pei C W et al. J. Vac. Sci. Technol. B 20 1196 (2002)
  200. Gösele U et al. J. Vac. Sci. Technol. A 17 1145 (1999)
  201. Tong Q Y et al. J. Microelectromech. Syst. 3 29 (1994)
  202. Takagi H, Maeda R J. Cryst. Growth 292 429 (2006)
  203. McKay K S et al. Appl. Phys. Lett. 90 222111 (2007)
  204. Antypas G A, Edgecumbe J Appl. Phys. Lett. 26 371 (1975)
  205. Fleming J G, Roherty-Osmun E, Godshall N A J. Electrochem. Soc. 139 3300 (1992)
  206. Cioccio L Di, Jalaguier E, Letertre F Phys. Status Solidi A 202 509 (2005)
  207. Peterson R L et al. Appl. Phys. Lett. 88 201913 (2006)
  208. Huang H et al. Appl. Phys. Lett. 90 161102 (2007)
  209. Lin H C et al. J. Vac. Sci. Technol. B 20 752 (2002)
  210. Cengher D et al. J. Cryst. Growth 251 754 (2003)
  211. Gösele U, Tong Q-Y Annu. Rev. Mater. Sci. 28 215 (1998)
  212. Ivanyutin L A i dr. Fiz. Tekh. Poluprovodn. 29 1750 (1995); Ivanyutin L A et al. Semicond. 29 914 (1995)
  213. Joshkin V A et al. J. Appl. Phys. 79 3774 (1996)
  214. Umeno M et al. Solar Energy Mater. Solar Cells 50 203 (1998)
  215. Wang G et al. Appl. Phys. Lett. 76 730 (2000)
  216. Carlin J A et al. Solar Energy Mater. Solar Cells 66 621 (2001)
  217. Ringel S A et al. Prog. Photovoltaics 10 417 (2002)
  218. Shimizu Y, Okada Y J. Cryst. Growth 265 99 (2004)
  219. Ginige R et al. Semicond. Sci. Technol. 21 775 (2006)
  220. Lueck M R et al. IEEE Electron. Device Lett. 27 142 (2006)
  221. Carlin J F et al. J. Cryst. Growth 201 994 (1999)
  222. Groenert M E et al. J. Vac. Sci. Technol. B 21 1064 (2003)
  223. Chriqui Y et al. Electron. Lett. 39 1658 (2003)
  224. Kwon O et al. J. Appl. Phys. 97 034504 (2005)
  225. Chriqui Y et al. Opt. Mater. 27 846 (2005)
  226. Chilukuri K et al. Semicond. Sci. Technol. 22 29 (2007)
  227. Luo G-L et al. J. Appl. Phys. 101 084501 (2007)
  228. Lew K L et al. J. Vac. Sci. Technol. B 25 902 (2007)
  229. Oye M M et al. J. Vac. Sci. Technol. B 25 1098 (2007)
  230. Yang V K et al. J. Mater. Sci. 13 377 (2002)
  231. Dohrman C L et al. Mater. Sci. Eng. B 135 235 (2006)
© 1918–2024 Uspekhi Fizicheskikh Nauk
Email: ufn@ufn.ru Editorial office contacts About the journal Terms and conditions