RSS feeds
РусскийEnglish
Issue 4, 2024
Volume year page
Issues Authors PACS Subscription For authors

Issues

 / 

2008

 / 

May

←  →

Reviews of topical problems


GaAs epitaxy on Si substrates: modern status of research and engineering

,
Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, prosp. Akad. Lavrenteva 13, Novosibirsk, 630090, Russian Federation

While silicon and gallium arsenide are dominant materials in modern micro- and nanoelectronics, devices fabricated from them still use Si and GaAs substrates only separately. Integrating these materials on the (highest efficiency) substrate of Si has been the subject of much research effort for more than twenty years. This review systematizes and generalizes the current understanding of the fundamental physical mechanisms governing the epitaxial growth of GaAs and its related III-V compounds on Si substrates. Basic techniques available for improving the quality of such heterostructures are described, and recent advances in fabricating device-quality AIIIBV/Si heterostructures and devices on their bases are also presented.

Fulltext pdf (525 KB)
Fulltext is also available at DOI: 10.1070/PU2008v051n05ABEH006529
PACS: 61.72.Lk, 62.25.−g, 81.05.Cy, 81.05.Ea, 81.15.−z, 85.40.Sz (all)
DOI: 10.1070/PU2008v051n05ABEH006529
URL: https://ufn.ru/en/articles/2008/5/b/
000259376200002
2-s2.0-51549109577
2008PhyU...51..437B
Citation: Bolkhovityanov Yu B, Pchelyakov O P "GaAs epitaxy on Si substrates: modern status of research and engineering" Phys. Usp. 51 437–456 (2008)
BibTexBibNote ® (generic)BibNote ® (RIS)MedlineRefWorks

Оригинал: Болховитянов Ю Б, Пчеляков О П «Эпитаксия GaAs на кремниевых подложках: современное состояние исследований и разработок» УФН 178 459–480 (2008); DOI: 10.3367/UFNr.0178.200805b.0459

References (231) Cited by (218) ↓ Similar articles (20)

  1. Hong C, Song Zh et al Journal Of Physics And Chemistry Of Solids 184 111717 (2024)
  2. Yuan J, Li Zh et al Materials & Design 237 112547 (2024)
  3. Zeng C, Fu D et al Photonics 10 573 (2023)
  4. Tejedor P, García-Tabarés E et al Applied Surface Science 616 156518 (2023)
  5. (SILICONPV 2022, THE 12TH INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS) Vol. SILICONPV 2022, THE 12TH INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICSScreen-printing SiGe layer on Si substrate for III-V solar cell applicationShotaSuzukiMoekoMatsubaraKosukeTsujiTakashiKurokiHideakiMinamiyamaMarwanDhamrinYukiharuUraoka2826 (2023) p. 100004
  6. Strömberg A, Manavaimaran B et al Physica Status Solidi (a) 220 (8) (2023)
  7. Kumar R, Saha S K et al Crystal Growth & Design 23 7385 (2023)
  8. Navarro A, García-Tabarés E et al Applied Surface Science 610 155578 (2023)
  9. Oliva M, Flissikowski T et al ACS Appl. Nano Mater. 6 15278 (2023)
  10. Suchikova Ya, Kovachov S et al 2023 IEEE 13th International Conference on Electronics and Information Technologies (ELIT), (2023) p. 330
  11. Lovergine N, Miccoli I et al Applied Surface Science 634 157627 (2023)
  12. Zhou J, Huang Q et al Nano Energy 92 106712 (2022)
  13. Saidov A S, Razzokov A Sh Crystallogr. Rep. 67 301 (2022)
  14. Trippel M, Bläsing J et al 93 (11) (2022)
  15. Du Y, Xu B et al Nanomaterials 12 741 (2022)
  16. Wang X, He J et al Advanced Photonics Research 3 (12) (2022)
  17. Han Yu, Park H et al Adv. Opt. Photon. 14 404 (2022)
  18. Shengurov V G, Chalkov V Yu et al Journal Of Crystal Growth 578 126421 (2022)
  19. Petrushkov M O, Abramkin D S et al Nanomaterials 12 4449 (2022)
  20. Tamalampudi S R, Dushaq G et al IEEE J. Select. Topics Quantum Electron. 28 1 (2022)
  21. Ashery A, Gaballah A E H, Elnasharty M M M Silicon 14 6169 (2022)
  22. Strömberg A, Yuan Ya et al Catalysts 12 1482 (2022)
  23. Sushkov A  A, Pavlov D  A et al Semiconductors 56 122 (2022)
  24. Wangila E, Saha S K et al CrystEngComm 24 4372 (2022)
  25. Catindig G A R, Bardolaza H R et al Opt. Mater. Express 12 4702 (2022)
  26. Kumar R, Saha S K et al Applied Surface Science 542 148554 (2021)
  27. Cheng Zh, Cao R et al Advanced Science 8 (11) (2021)
  28. Li Ch, Tian R et al ACS Photonics 8 2431 (2021)
  29. Afalla Je, Prieto E A et al J. Phys.: Condens. Matter 33 315704 (2021)
  30. Wan Ya, Norman Ju et al IEEE Nanotechnology Mag. 15 8 (2021)
  31. Zubov F, Maximov M et al Opt. Lett. 46 3853 (2021)
  32. Strömberg A, Bhargava P et al Physica Status Solidi (a) 218 (3) (2021)
  33. Ko Y-H, Kim K-J, Han W S Opt. Mater. Express 11 943 (2021)
  34. Dyakov S A, Stepikhova M V et al Laser & Photonics Reviews 15 (7) (2021)
  35. Seredin P V, Goloshchapov D L et al Applied Surface Science 537 147985 (2021)
  36. Yang Z-Yu, Wang Ju et al Chinese Phys. B 30 016102 (2021)
  37. Park Ja-S, Tang M et al Frontiers Of Nanoscience Vol. Semiconductor NanodevicesMonolithic III–V quantum dot lasers on silicon20 (2021) p. 353
  38. Shi B, Song B et al 118 (12) (2021)
  39. Liang D, Bowers J E Gxjzz 2 59 (2021)
  40. Du Y, Xu B et al J Mater Sci: Mater Electron (2021)
  41. Gonzales K C, Prieto E A et al J Mater Sci: Mater Electron 32 13825 (2021)
  42. Huntington A S InGaAs Avalanche Photodiodes for Ranging and Lidar (2020) p. 1
  43. Wang B, Syaranamual G J et al Semicond. Sci. Technol. 35 095036 (2020)
  44. Eremenko M M, Solodovnik M S et al J. Phys.: Conf. Ser. 1695 012013 (2020)
  45. Petrushkov M O, Abramkin D S et al Semiconductors 54 1548 (2020)
  46. Anyebe E A Nanomaterials 10 2064 (2020)
  47. Park Ja-S, Tang M et al Crystals 10 1163 (2020)
  48. Li J, Liu Ch et al 9 2295 (2020)
  49. Nakahara M, Matsubara M et al Jpn. J. Appl. Phys. 59 SGGF07 (2020)
  50. Feifel M, Ohlmann Je et al Journal Of Crystal Growth 532 125422 (2020)
  51. Sapunov G A, Fedorov V V et al Crystal Growth & Design 20 300 (2020)
  52. Sushkov A A, Pavlov D A et al Semiconductors 54 1332 (2020)
  53. Cornet C, Charbonnier S et al Phys. Rev. Materials 4 (5) (2020)
  54. Rio C M, Rodriguez J -B et al Journal Of Crystal Growth 529 125299 (2020)
  55. Afalla Je, Catindig G et al J. Phys. D: Appl. Phys. 53 095105 (2020)
  56. Vichi S, Bietti S et al Nanotechnology 31 245203 (2020)
  57. Zhukov A E, Moiseev E I et al Tech. Phys. Lett. 46 783 (2020)
  58. Zhang Zh, Li Z et al Adv Funct Materials 30 (38) (2020)
  59. Ko Y-H, Kim K-J et al Solid-State Electronics 166 107763 (2020)
  60. Kumar S, Avasthi S 2020 47th IEEE Photovoltaic Specialists Conference (PVSC), (2020) p. 1987
  61. Mbeunmi A B P, El-Gahouchi M et al Solar Energy Materials And Solar Cells 217 110641 (2020)
  62. Nakahara M, Matsubara M et al MRS Advances 4 749 (2019)
  63. Ha M T H, Huynh S H et al Thin Solid Films 669 430 (2019)
  64. Shi B, Wang L et al 114 (17) (2019)
  65. Boras G, Yu X, Liu H J. Semicond. 40 101301 (2019)
  66. Han Yu, Xue Y, Lau K M 114 (19) (2019)
  67. Abramkin D S, Petrushkov M O et al Semiconductors 53 1143 (2019)
  68. Afalla Je, Mag-usara Valynn et al 2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), (2019) p. 1
  69. Shi B, Lau K M Semiconductors And Semimetals Vol. Future Directions in Silicon PhotonicsGrowth of III–V semiconductors and lasers on silicon substrates by MOCVD101 (2019) p. 229
  70. Sushkov A A, Pavlov D A et al Semiconductors 53 1242 (2019)
  71. Ballabio A, Bietti S et al Sci Rep 9 (1) (2019)
  72. Afalla Je, Gonzales K C et al Semicond. Sci. Technol. 34 035031 (2019)
  73. Yeu I W, Han G et al Sci Rep 9 (1) (2019)
  74. Ryndin E A, Konoplev B G Quantum Electron. 49 563 (2019)
  75. Kwoen J, Lee J et al Jpn. J. Appl. Phys. 58 SBBE07 (2019)
  76. Frank-Rotsch Ch, Dropka N, Rotsch P Single Crystals of Electronic Materials (2019) p. 181
  77. Uvarov A V, Zelentsov K S, Gudovskikh A S Semiconductors 53 1075 (2019)
  78. Tournet J, Parola S et al Solar Energy Materials And Solar Cells 191 444 (2019)
  79. Konoplev B G, Ryndin E A, Pisarenko I V Russ Microelectron 48 435 (2019)
  80. Wan Ya, Norman Ju, Bowers J Semiconductors And Semimetals Vol. Future Directions in Silicon PhotonicsQuantum dot microcavity lasers on silicon substrates101 (2019) p. 305
  81. Hu Y, Liang D et al Light Sci Appl 8 (1) (2019)
  82. Miccoli I, Prete P, Lovergine N Crystal Growth & Design 19 5523 (2019)
  83. Seredin P V, Lenshin A S et al Physica E: Low-dimensional Systems And Nanostructures 97 218 (2018)
  84. Xue H, Wang Ya et al Adv Funct Materials 28 (47) (2018)
  85. Seredin P V, Lenshin A S et al Physica B: Condensed Matter 530 30 (2018)
  86. Yako M, Ishikawa Ya, Wada K 123 (18) (2018)
  87. Kozak R, Prieto I et al Micron 113 83 (2018)
  88. Afalla Je, Gonzales K C et al 2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), (2018) p. 1
  89. Seredin P V, Goloshchapov D L et al Semiconductors 52 1012 (2018)
  90. Niehle M, Rodriguez Je-B et al Acta Materialia 143 121 (2018)
  91. Tournié E, Rodriguez Je-B et al Semiconductors And Semimetals Vol. Silicon PhotonicsEpitaxial Integration of Antimonide-Based Semiconductor Lasers on Si99 (2018) p. 1
  92. Kumar R, Dixit V K, Sharma T K Vacuum 154 214 (2018)
  93. Wang Yu-C, Yamamoto A et al 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC, A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC), (2018) p. 0264
  94. Cariou R, Benick Ja et al Nat Energy 3 326 (2018)
  95. Hu H, Wang Ju et al Appl. Phys. A 124 (4) (2018)
  96. Abramkin D S, Petrushkov M O et al Semiconductors 52 1484 (2018)
  97. Feifel M, Ohlmann Je et al IEEE J. Photovoltaics 8 1590 (2018)
  98. Kumar R, Dixit V K et al Superlattices And Microstructures 122 636 (2018)
  99. Vahanka H, Purohit Z, Tripathi B (AIP Conference Proceedings) Vol. 1961 (2018) p. 030035
  100. Supplie O, Romanyuk O et al Progress In Crystal Growth And Characterization Of Materials 64 103 (2018)
  101. Chen Y-H, Jheng J-W et al IEEE Photon. Technol. Lett. 30 1013 (2018)
  102. Kim Y, Kim K et al J. Korean Phys. Soc. 72 633 (2018)
  103. Abramkin D S, Petrushkov M O et al Optoelectron.Instrument.Proc. 54 181 (2018)
  104. Tournié E, Castellano A et al Molecular Beam Epitaxy (2018) p. 625
  105. Bendayan M, Sabo R et al J. Nanophoton 11 1 (2017)
  106. Lee E, Luo T Phys. Chem. Chem. Phys. 19 18407 (2017)
  107. Schlipf J, Frieiro J L et al 2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), (2017) p. 37
  108. Li Q, Lau K M Progress In Crystal Growth And Characterization Of Materials 63 105 (2017)
  109. Loshkarev I D, Vasilenko A P et al Tech. Phys. Lett. 43 213 (2017)
  110. Ha M T H, Huynh S H et al Mater. Res. Express 4 085901 (2017)
  111. Prieto I, Kozak R et al Nanotechnology 28 135701 (2017)
  112. Prieto I, Kozak R et al Small 13 1603122 (2017)
  113. Kozak R, Kurdzesau F et al J Appl Crystallogr 50 1299 (2017)
  114. Yeu I W, Park Ja et al Sci Rep 7 (1) (2017)
  115. Ryndin E A, Pisarenko I V Russ Microelectron 46 186 (2017)
  116. Niehle M, Trampert A et al Scripta Materialia 132 5 (2017)
  117. Jung D, Callahan P G et al 122 (22) (2017)
  118. Cariou R, Benick Ja et al IEEE J. Photovoltaics 7 367 (2017)
  119. (Photonic and Phononic Properties of Engineered Nanostructures VII) Vol. Photonic and Phononic Properties of Engineered Nanostructures VIIDual-mode MOS SOI nanoscale transistor serving as a building block for optical communication between blocksAliAdibiShawn-YuLinAxelSchererMichaelBendayanRoiSaboRoeeZolbergYaakovMandelbaumAvrahamChellyAviKarsenty10112 (2017) p. 101122A
  120. Baba M, Makita K et al Prog. Photovolt: Res. Appl. 25 255 (2017)
  121. Aleshkin V Ya, Baidus N V et al 109 (6) (2016)
  122. Youngblood N, Li M 6 1205 (2016)
  123. Vasil’evskii I S, Pushkarev S S et al Semiconductors 50 559 (2016)
  124. Yablonsky A N, Morozov S V et al Semiconductors 50 1435 (2016)
  125. Kumar R, Dixit V K et al 120 (13) (2016)
  126. Bendayan M, Karsenty A, Chelly A 2016 IEEE International Conference on the Science of Electrical Engineering (ICSEE), (2016) p. 1
  127. Yao M, Sheng Ch et al ACS Nano 10 2424 (2016)
  128. Fiordaliso E M, Balogh Z I et al European Microscopy Congress 2016: Proceedings 1 (2016) p. 743
  129. Seel A, Davtyan A et al 2016 International Conference on Communications (COMM), (2016) p. 455
  130. Heidelberger Ch, Fitzgerald E A Journal Of Crystal Growth 446 7 (2016)
  131. Cariou R, Chen W et al Sci Rep 6 (1) (2016)
  132. Rodriguez J B, Madiomanana K et al Journal Of Crystal Growth 439 33 (2016)
  133. García‐Tabarés Elisa, Carlin J A et al Progress In Photovoltaics 24 634 (2016)
  134. Bogumilowicz Y, Hartmann J M et al Journal Of Crystal Growth 453 180 (2016)
  135. Seel A, Davtyan A et al Mathematical Problems In Engineering 2016 1 (2016)
  136. Boulanger J P, Chia A C E et al IEEE J. Photovoltaics 6 661 (2016)
  137. Bergamaschini R, Salvalaglio M et al Advances In Physics: X 1 331 (2016)
  138. Wang Ju, Hu H-Ya et al Chinese Phys. B 24 028101 (2015)
  139. Almansouri I, Bremner S et al 2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC), (2015) p. 1
  140. Bhatnagar K, Caro M P et al 33 (6) (2015)
  141. Yurasov D V, Bobrov A I et al Semiconductors 49 1415 (2015)
  142. Wang Ju, Hu H-Ya et al Chinese Phys. Lett. 32 088101 (2015)
  143. George I, Becagli F et al Semicond. Sci. Technol. 30 114004 (2015)
  144. Li Q, Ng K W, Lau K M 106 (7) (2015)
  145. Kolesnikov A V, Trukhanov E M et al Modern Electronic Materials 1 22 (2015)
  146. Volz K, Stolz W et al Handbook of Crystal Growth (2015) p. 1249
  147. Rienäcker M, Borkenhagen B et al 118 (5) (2015)
  148. Aleshkin V Ya, Dikareva N V et al Jetp Lett. 100 795 (2015)
  149. Seredin P V, Lenshin A S et al Semiconductors 49 915 (2015)
  150. He Yu, Wang Ju et al 106 (20) (2015)
  151. Almansouri I, Bremner S et al IEEE J. Photovoltaics 5 683 (2015)
  152. Orzali T, Vert A et al Journal Of Crystal Growth 427 72 (2015)
  153. Jung A, Taboada A G et al 118 (7) (2015)
  154. Bogumilowicz Y, Hartmann J M et al 107 (21) (2015)
  155. Orzali T, Vert A et al 118 (10) (2015)
  156. Seredin P V, Lenshin A S et al Materials Science In Semiconductor Processing 39 551 (2015)
  157. He Yu, Wang Ju et al Frontiers in Optics 2015, (2015) p. FTh4B.4
  158. Gao F, Wen L et al Thin Solid Films 589 32 (2015)
  159. Aleshkin V Ya, Dikareva N V et al Tech. Phys. Lett. 41 648 (2015)
  160. Zhao M, Chen X et al Sci Rep 5 (1) (2015)
  161. Gomes U P, Ercolani D et al Nanotechnology 26 415604 (2015)
  162. Wang Ju, Ren X et al J. Lightwave Technol. 33 3163 (2015)
  163. Yu G, Shaoqi F et al IEEE J. Select. Topics Quantum Electron. 20 36 (2014)
  164. Polyakov M S, Badalyan A M et al AMR 875-877 246 (2014)
  165. Dixit V K, Kumar Sh et al 104 (9) (2014)
  166. Jain N, Hudait M K 1 (3-4) (2014)
  167. DeMeo D, Shemelya C et al Journal Of Elec Materi 43 902 (2014)
  168. He Yu, Wang Ju et al Asia Communications and Photonics Conference 2014, (2014) p. ATh2A.1
  169. Ponomarev K E, Shklyaev A A 2014 15th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM), (2014) p. 10
  170. Zheng H, Jagannadham K Solid-State Electronics 99 41 (2014)
  171. Kim S W, Cho Y D et al Journal Of Crystal Growth 401 319 (2014)
  172. Emel’yanov E A, Kokhanenko A P et al Russ Phys J 57 359 (2014)
  173. Emelyanov E A, Feklin D F et al Optoelectron.Instrument.Proc. 50 224 (2014)
  174. Jiang Y, Zhang Sh et al CrystEngComm 16 8977 (2014)
  175. Ward T, Sánchez A M et al 116 (6) (2014)
  176. Asthana P K, Ghosh B et al IEEE Trans. Electron Devices 61 479 (2014)
  177. Kabyshev A V, Konusov F V et al J. Synch. Investig. 8 1168 (2014)
  178. Yu B, Fan H B et al AMR 1015 18 (2014)
  179. Geng Yu, Feng Sh et al Optical Fiber Communication Conference, (2014) p. M2G.2
  180. Kolesnikov A V, Trukhanov E M et al J. Synch. Investig. 8 647 (2014)
  181. Polyakov M S, Badalyan A M et al Chemical Vapor Deposition 20 170 (2014)
  182. Balgos M H, Jaculbia R et al Journal Of Luminescence 155 27 (2014)
  183. Wen L, Gao F et al 116 (19) (2014)
  184. Burbaev T M, Gorbatsevich A A et al Bull. Lebedev Phys. Inst. 40 219 (2013)
  185. Kabyshev A V, Konusov F V, Remnev G E Russ Phys J 56 607 (2013)
  186. Frigeri C, Bietti S et al Applied Surface Science 267 86 (2013)
  187. Shklyaev A A, Romanyuk K N, Latyshev A V JSEMAT 03 195 (2013)
  188. Emelyanov E A, Kokhanenko A P et al Russ Phys J 56 55 (2013)
  189. Petrushkov M O, Putyato M A et al 2013 14th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, (2013) p. 27
  190. Lee E H, Song J D et al Journal Of The Korean Vacuum Society 22 313 (2013)
  191. Bietti S, Scaccabarozzi A et al 103 (26) (2013)
  192. Wang Ju, Deng C et al Chinese Phys. Lett. 30 116801 (2013)
  193. Wilkins M M, Boucherif A et al IEEE J. Photovoltaics 3 1125 (2013)
  194. Konoplev B G, Ryndin E A, Denisenko M A Tech. Phys. Lett. 39 986 (2013)
  195. Buzynin Yu N, Shengurov V G et al Bull. Russ. Acad. Sci. Phys. 76 1036 (2012)
  196. Hsu Ch-W, Chen Yu-F, Su Ya-K Nanotechnology 23 495306 (2012)
  197. Biermanns A, Breuer S et al Nanotechnology 23 305703 (2012)
  198. Fonseka H A, Tan H H et al COMMAD 2012, (2012) p. 43
  199. Björk M T, Schmid H et al Journal Of Crystal Growth 344 31 (2012)
  200. Hu W, Cheng B et al Front. Optoelectron. 5 41 (2012)
  201. Cavigli L, Bietti S et al 100 (23) (2012)
  202. Hsu Ch-W, Chen Yu-F, Su Ya-K Nanoscale Res Lett 7 (1) (2012)
  203. Hu W, Cheng B et al Thin Solid Films 520 5361 (2012)
  204. Hsu Ch-W, Chen Yu-F, Su Ya-K ECS J. Solid State Sci. Technol. 1 P140 (2012)
  205. Kabyshev A V, Konusov F V, Remnev G E J. Synch. Investig. 5 228 (2011)
  206. Hu W, Cheng B et al 8th IEEE International Conference on Group IV Photonics, (2011) p. 314
  207. Putyato M A, Semyagin B R et al Russ Phys J 53 906 (2011)
  208. Miccoli I, Prete P et al Cryst. Res. Technol. 46 795 (2011)
  209. D’Souza Sh, Haysom J et al 2011 IEEE Electrical Power and Energy Conference, (2011) p. 57
  210. Horie Yu, Décosterd L et al Opt. Express 19 15732 (2011)
  211. Breuer S, Hilse M et al Journal Of Crystal Growth 323 311 (2011)
  212. Paskiewicz D M, Tanto B et al ACS Nano 5 5814 (2011)
  213. Badalyan A M, Bakhturova L F et al Tech. Phys. Lett. 36 265 (2010)
  214. Kang J H, Gao Q et al Nanotechnology 21 035604 (2010)
  215. Breuer S, Hilse M et al Phys. Rev. B 82 (7) (2010)
  216. Yoon J, Jo S et al Nature 465 329 (2010)
  217. Bietti S, Somaschini C et al Nanoscale Res Lett 5 1905 (2010)
  218. Putuato M A, Bolkhovityanov Yu B et al Semiconductors 43 1235 (2009)
© 1918–2024 Uspekhi Fizicheskikh Nauk
Email: ufn@ufn.ru Editorial office contacts About the journal Terms and conditions