RSS feeds
РусскийEnglish
Issue 4, 2025 Retrieve →
Issues Authors PACS Subscription For authors
Search →

Issues

 / 

2008

 / 

May

←  →

Reviews of topical problems


GaAs epitaxy on Si substrates: modern status of research and engineering

,
Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, prosp. Akad. Lavrenteva 13, Novosibirsk, 630090, Russian Federation

While silicon and gallium arsenide are dominant materials in modern micro- and nanoelectronics, devices fabricated from them still use Si and GaAs substrates only separately. Integrating these materials on the (highest efficiency) substrate of Si has been the subject of much research effort for more than twenty years. This review systematizes and generalizes the current understanding of the fundamental physical mechanisms governing the epitaxial growth of GaAs and its related III-V compounds on Si substrates. Basic techniques available for improving the quality of such heterostructures are described, and recent advances in fabricating device-quality AIIIBV/Si heterostructures and devices on their bases are also presented.

Fulltext pdf (525 KB)
Fulltext is also available at DOI: 10.1070/PU2008v051n05ABEH006529
PACS: 61.72.Lk, 62.25.−g, 81.05.Cy, 81.05.Ea, 81.15.−z, 85.40.Sz (all)
DOI: 10.1070/PU2008v051n05ABEH006529
URL: https://ufn.ru/en/articles/2008/5/b/
000259376200002
2-s2.0-51549109577
2008PhyU...51..437B
Citation: Bolkhovityanov Yu B, Pchelyakov O P "GaAs epitaxy on Si substrates: modern status of research and engineering" Phys. Usp. 51 437–456 (2008)
BibTexBibNote ® (generic)BibNote ® (RIS)MedlineRefWorks

Оригинал: Болховитянов Ю Б, Пчеляков О П «Эпитаксия GaAs на кремниевых подложках: современное состояние исследований и разработок» УФН 178 459–480 (2008); DOI: 10.3367/UFNr.0178.200805b.0459

References (231) Cited by (227) ↓ Similar articles (20)

  1. Gilbert A, Ramonda M et al Advanced Physics Research 4 (1) (2025)
  2. Quispe D, Eng B et al IEEE J. Photovoltaics 15 223 (2025)
  3. Boussetta R, Hbibi M et al Philosophical Magazine 1 (2025)
  4. Gilbert A, Graser K et al Advanced Physics Research 4 (4) (2025)
  5. Yuan J, Li Zh et al Materials & Design 237 112547 (2024)
  6. Gucmann F, Meng B et al ACS Appl. Electron. Mater. (2024)
  7. Ashery A, Gaballah A E H et al IScience 27 110636 (2024)
  8. Putyato M A, Emel’yanov E A et al Žurnal èksperimentalʹnoj I Teoretičeskoj Fiziki 165 51 (2024)
  9. Hong C, Song Zh et al Journal Of Physics And Chemistry Of Solids 184 111717 (2024)
  10. Zhang Q, Dou Y et al Materials Today Communications 40 109550 (2024)
  11. Hervieu Yu Yu, Yesin M Yu et al MoEM 10 243 (2024)
  12. Xu B, Jin Ch et al InfoMat 6 (8) (2024)
  13. Strömberg A, Manavaimaran B et al Physica Status Solidi (a) 220 (8) (2023)
  14. Zeng C, Fu D et al Photonics 10 573 (2023)
  15. Suchikova Ya, Kovachov S et al 2023 IEEE 13th International Conference on Electronics and Information Technologies (ELIT), (2023) p. 330
  16. (SILICONPV 2022, THE 12TH INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS) Vol. SILICONPV 2022, THE 12TH INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICSScreen-printing SiGe layer on Si substrate for III-V solar cell applicationShotaSuzukiMoekoMatsubaraKosukeTsujiTakashiKurokiHideakiMinamiyamaMarwanDhamrinYukiharuUraoka2826 (2023) p. 100004
  17. Lovergine N, Miccoli I et al Applied Surface Science 634 157627 (2023)
  18. Navarro A, García-Tabarés E et al Applied Surface Science 610 155578 (2023)
  19. Kumar R, Saha S K et al Crystal Growth & Design 23 7385 (2023)
  20. Tejedor P, García-Tabarés E et al Applied Surface Science 616 156518 (2023)
  21. Oliva M, Flissikowski T et al ACS Appl. Nano Mater. 6 15278 (2023)
  22. Du Y, Xu B et al Nanomaterials 12 741 (2022)
  23. Ashery A, Gaballah A E H, Elnasharty M M M Silicon 14 6169 (2022)
  24. Petrushkov M O, Abramkin D S et al Nanomaterials 12 4449 (2022)
  25. Tamalampudi S R, Dushaq G et al IEEE J. Select. Topics Quantum Electron. 28 1 (2022)
  26. Saidov A S, Razzokov A Sh Crystallogr. Rep. 67 301 (2022)
  27. Wang X, He J et al Advanced Photonics Research 3 (12) (2022)
  28. Han Yu, Park H et al Adv. Opt. Photon. 14 404 (2022)
  29. Sushkov A  A, Pavlov D  A et al Semiconductors 56 122 (2022)
  30. Trippel M, Bläsing J et al 93 (11) (2022)
  31. Zhou J, Huang Q et al Nano Energy 92 106712 (2022)
  32. Catindig G A R, Bardolaza H R et al Opt. Mater. Express 12 4702 (2022)
  33. Shengurov V G, Chalkov V Yu et al Journal Of Crystal Growth 578 126421 (2022)
  34. Wangila E, Saha S K et al CrystEngComm 24 4372 (2022)
  35. Strömberg A, Yuan Ya et al Catalysts 12 1482 (2022)
  36. Shi B, Song B et al 118 (12) (2021)
  37. Strömberg A, Bhargava P et al Physica Status Solidi (a) 218 (3) (2021)
  38. Liang D, Bowers J E Gxjzz 2 59 (2021)
  39. Seredin P V, Goloshchapov D L et al Applied Surface Science 537 147985 (2021)
  40. Zubov F, Maximov M et al Opt. Lett. 46 3853 (2021)
  41. Du Y, Xu B et al J Mater Sci: Mater Electron (2021)
  42. Wan Ya, Norman Ju et al IEEE Nanotechnology Mag. 15 8 (2021)
  43. Afalla Je, Prieto E A et al J. Phys.: Condens. Matter 33 315704 (2021)
  44. Cheng Zh, Cao R et al Advanced Science 8 (11) (2021)
  45. Park Ja-S, Tang M et al Frontiers Of Nanoscience Vol. Semiconductor NanodevicesMonolithic III–V quantum dot lasers on silicon20 (2021) p. 353
  46. Kumar R, Saha S K et al Applied Surface Science 542 148554 (2021)
  47. Li Ch, Tian R et al ACS Photonics 8 2431 (2021)
  48. Dyakov S A, Stepikhova M V et al Laser & Photonics Reviews 15 (7) (2021)
  49. Ko Y-H, Kim K-J, Han W S Opt. Mater. Express 11 943 (2021)
  50. Gonzales K C, Prieto E A et al J Mater Sci: Mater Electron 32 13825 (2021)
  51. Yang Z-Yu, Wang Ju et al Chinese Phys. B 30 016102 (2021)
  52. Zhang Zh, Li Z et al Adv Funct Materials 30 (38) (2020)
  53. Sapunov G A, Fedorov V V et al Crystal Growth & Design 20 300 (2020)
  54. Zhukov A E, Moiseev E I et al Tech. Phys. Lett. 46 783 (2020)
  55. Cornet C, Charbonnier S et al Phys. Rev. Materials 4 (5) (2020)
  56. Eremenko M M, Solodovnik M S et al J. Phys.: Conf. Ser. 1695 012013 (2020)
  57. Rio C M, Rodriguez J -B et al Journal Of Crystal Growth 529 125299 (2020)
  58. Huntington A S InGaAs Avalanche Photodiodes for Ranging and Lidar (2020) p. 1
  59. Afalla Je, Catindig G et al J. Phys. D: Appl. Phys. 53 095105 (2020)
  60. Sushkov A A, Pavlov D A et al Semiconductors 54 1332 (2020)
  61. Petrushkov M O, Abramkin D S et al Semiconductors 54 1548 (2020)
  62. Li J, Liu Ch et al 9 2295 (2020)
  63. Mbeunmi A B P, El-Gahouchi M et al Solar Energy Materials And Solar Cells 217 110641 (2020)
  64. Kumar S, Avasthi S 2020 47th IEEE Photovoltaic Specialists Conference (PVSC), (2020) p. 1987
  65. Feifel M, Ohlmann Je et al Journal Of Crystal Growth 532 125422 (2020)
  66. Vichi S, Bietti S et al Nanotechnology 31 245203 (2020)
  67. Wang B, Syaranamual G J et al Semicond. Sci. Technol. 35 095036 (2020)
  68. Ko Y-H, Kim K-J et al Solid-State Electronics 166 107763 (2020)
  69. Park Ja-S, Tang M et al Crystals 10 1163 (2020)
  70. Nakahara M, Matsubara M et al Jpn. J. Appl. Phys. 59 SGGF07 (2020)
  71. Konoplev B G, Ryndin E A, Pisarenko I V Russ Microelectron 48 435 (2019)
  72. Frank-Rotsch Ch, Dropka N, Rotsch P Single Crystals of Electronic Materials (2019) p. 181
  73. Han Yu, Xue Y, Lau K M 114 (19) (2019)
  74. Ryndin E A, Konoplev B G Quantum Electron. 49 563 (2019)
  75. Wan Ya, Norman Ju, Bowers J Semiconductors And Semimetals Vol. Future Directions in Silicon PhotonicsQuantum dot microcavity lasers on silicon substrates101 (2019) p. 305
  76. Miccoli I, Prete P, Lovergine N Crystal Growth & Design 19 5523 (2019)
  77. Abramkin D S, Petrushkov M O et al Semiconductors 53 1143 (2019)
  78. Nakahara M, Matsubara M et al MRS Advances 4 749 (2019)
  79. Shi B, Wang L et al 114 (17) (2019)
  80. Kwoen J, Lee J et al Jpn. J. Appl. Phys. 58 SBBE07 (2019)
  81. Shi B, Lau K M Semiconductors And Semimetals Vol. Future Directions in Silicon PhotonicsGrowth of III–V semiconductors and lasers on silicon substrates by MOCVD101 (2019) p. 229
  82. Afalla Je, Gonzales K C et al Semicond. Sci. Technol. 34 035031 (2019)
  83. Yeu I W, Han G et al Sci Rep 9 (1) (2019)
  84. Hu Y, Liang D et al Light Sci Appl 8 (1) (2019)
  85. Ha M T H, Huynh S H et al Thin Solid Films 669 430 (2019)
  86. Uvarov A V, Zelentsov K S, Gudovskikh A S Semiconductors 53 1075 (2019)
  87. Boras G, Yu X, Liu H J. Semicond. 40 101301 (2019)
  88. Afalla Je, Mag-usara Valynn et al 2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), (2019) p. 1
  89. Tournet J, Parola S et al Solar Energy Materials And Solar Cells 191 444 (2019)
  90. Ballabio A, Bietti S et al Sci Rep 9 (1) (2019)
  91. Sushkov A A, Pavlov D A et al Semiconductors 53 1242 (2019)
  92. Hu H, Wang Ju et al Appl. Phys. A 124 (4) (2018)
  93. Abramkin D S, Petrushkov M O et al Optoelectron.Instrument.Proc. 54 181 (2018)
  94. Yako M, Ishikawa Ya, Wada K 123 (18) (2018)
  95. Feifel M, Ohlmann Je et al IEEE J. Photovoltaics 8 1590 (2018)
  96. Vahanka H, Purohit Z, Tripathi B (AIP Conference Proceedings) Vol. 1961 (2018) p. 030035
  97. Supplie O, Romanyuk O et al Progress In Crystal Growth And Characterization Of Materials 64 103 (2018)
  98. Kumar R, Dixit V K, Sharma T K Vacuum 154 214 (2018)
  99. Kim Y, Kim K et al J. Korean Phys. Soc. 72 633 (2018)
  100. Chen Y-H, Jheng J-W et al IEEE Photon. Technol. Lett. 30 1013 (2018)
  101. Tournié E, Rodriguez Je-B et al Semiconductors And Semimetals Vol. Silicon PhotonicsEpitaxial Integration of Antimonide-Based Semiconductor Lasers on Si99 (2018) p. 1
  102. Seredin P V, Lenshin A S et al Physica B: Condensed Matter 530 30 (2018)
  103. Kozak R, Prieto I et al Micron 113 83 (2018)
  104. Abramkin D S, Petrushkov M O et al Semiconductors 52 1484 (2018)
  105. Afalla Je, Gonzales K C et al 2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), (2018) p. 1
  106. Xue H, Wang Ya et al Adv Funct Materials 28 (47) (2018)
  107. Seredin P V, Goloshchapov D L et al Semiconductors 52 1012 (2018)
  108. Cariou R, Benick Ja et al Nat Energy 3 326 (2018)
  109. Niehle M, Rodriguez Je-B et al Acta Materialia 143 121 (2018)
  110. Seredin P V, Lenshin A S et al Physica E: Low-dimensional Systems And Nanostructures 97 218 (2018)
  111. Kumar R, Dixit V K et al Superlattices And Microstructures 122 636 (2018)
  112. Wang Yu-C, Yamamoto A et al 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC, A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC), (2018) p. 0264
  113. Tournié E, Castellano A et al Molecular Beam Epitaxy (2018) p. 625
  114. Prieto I, Kozak R et al Small 13 1603122 (2017)
  115. Prieto I, Kozak R et al Nanotechnology 28 135701 (2017)
  116. Bendayan M, Sabo R et al J. Nanophoton 11 1 (2017)
  117. Cariou R, Benick Ja et al IEEE J. Photovoltaics 7 367 (2017)
  118. Schlipf J, Frieiro J L et al 2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), (2017) p. 37
  119. Jung D, Callahan P G et al 122 (22) (2017)
  120. Ryndin E A, Pisarenko I V Russ Microelectron 46 186 (2017)
  121. Lee E, Luo T Phys. Chem. Chem. Phys. 19 18407 (2017)
  122. Kozak R, Kurdzesau F et al J Appl Crystallogr 50 1299 (2017)
  123. Li Q, Lau K M Progress In Crystal Growth And Characterization Of Materials 63 105 (2017)
  124. Yeu I W, Park Ja et al Sci Rep 7 (1) (2017)
  125. Niehle M, Trampert A et al Scripta Materialia 132 5 (2017)
  126. Ha M T H, Huynh S H et al Mater. Res. Express 4 085901 (2017)
  127. Baba M, Makita K et al Prog. Photovolt: Res. Appl. 25 255 (2017)
  128. (Photonic and Phononic Properties of Engineered Nanostructures VII) Vol. Photonic and Phononic Properties of Engineered Nanostructures VIIDual-mode MOS SOI nanoscale transistor serving as a building block for optical communication between blocksAliAdibiShawn-YuLinAxelSchererMichaelBendayanRoiSaboRoeeZolbergYaakovMandelbaumAvrahamChellyAviKarsenty10112 (2017) p. 101122A
  129. Loshkarev I D, Vasilenko A P et al Tech. Phys. Lett. 43 213 (2017)
  130. Fiordaliso E M, Balogh Z I et al European Microscopy Congress 2016: Proceedings 1 (2016) p. 743
  131. Aleshkin V Ya, Baidus N V et al 109 (6) (2016)
  132. Boulanger J P, Chia A C E et al IEEE J. Photovoltaics 6 661 (2016)
  133. Heidelberger Ch, Fitzgerald E A Journal Of Crystal Growth 446 7 (2016)
  134. Yablonsky A N, Morozov S V et al Semiconductors 50 1435 (2016)
  135. Bogumilowicz Y, Hartmann J M et al Journal Of Crystal Growth 453 180 (2016)
  136. Seel A, Davtyan A et al 2016 International Conference on Communications (COMM), (2016) p. 455
  137. Kumar R, Dixit V K et al 120 (13) (2016)
  138. Bendayan M, Karsenty A, Chelly A 2016 IEEE International Conference on the Science of Electrical Engineering (ICSEE), (2016) p. 1
  139. Youngblood N, Li M 6 1205 (2016)
  140. Rodriguez J B, Madiomanana K et al Journal Of Crystal Growth 439 33 (2016)
  141. Bergamaschini R, Salvalaglio M et al Advances In Physics: X 1 331 (2016)
  142. Vasil’evskii I S, Pushkarev S S et al Semiconductors 50 559 (2016)
  143. García‐Tabarés Elisa, Carlin J A et al Progress In Photovoltaics 24 634 (2016)
  144. Cariou R, Chen W et al Sci Rep 6 (1) (2016)
  145. Seel A, Davtyan A et al Mathematical Problems In Engineering 2016 1 (2016)
  146. Yao M, Sheng Ch et al ACS Nano 10 2424 (2016)
  147. Bogumilowicz Y, Hartmann J M et al 107 (21) (2015)
  148. Aleshkin V Ya, Dikareva N V et al Tech. Phys. Lett. 41 648 (2015)
  149. Orzali T, Vert A et al Journal Of Crystal Growth 427 72 (2015)
  150. Yurasov D V, Bobrov A I et al Semiconductors 49 1415 (2015)
  151. Gomes U P, Ercolani D et al Nanotechnology 26 415604 (2015)
  152. Aleshkin V Ya, Dikareva N V et al Jetp Lett. 100 795 (2015)
  153. He Yu, Wang Ju et al 106 (20) (2015)
  154. George I, Becagli F et al Semicond. Sci. Technol. 30 114004 (2015)
  155. Seredin P V, Lenshin A S et al Semiconductors 49 915 (2015)
  156. He Yu, Wang Ju et al Frontiers in Optics 2015, (2015) p. FTh4B.4
  157. Wang Ju, Hu H-Ya et al Chinese Phys. Lett. 32 088101 (2015)
  158. Rienäcker M, Borkenhagen B et al 118 (5) (2015)
  159. Kolesnikov A V, Trukhanov E M et al Modern Electronic Materials 1 22 (2015)
  160. Wang Ju, Hu H-Ya et al Chinese Phys. B 24 028101 (2015)
  161. Li Q, Ng K W, Lau K M 106 (7) (2015)
  162. Gao F, Wen L et al Thin Solid Films 589 32 (2015)
  163. Orzali T, Vert A et al 118 (10) (2015)
  164. Bhatnagar K, Caro M P et al 33 (6) (2015)
  165. Almansouri I, Bremner S et al 2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC), (2015) p. 1
  166. Wang Ju, Ren X et al J. Lightwave Technol. 33 3163 (2015)
  167. Jung A, Taboada A G et al 118 (7) (2015)
  168. Zhao M, Chen X et al Sci Rep 5 (1) (2015)
  169. Seredin P V, Lenshin A S et al Materials Science In Semiconductor Processing 39 551 (2015)
  170. Almansouri I, Bremner S et al IEEE J. Photovoltaics 5 683 (2015)
  171. Volz K, Stolz W et al Handbook of Crystal Growth (2015) p. 1249
  172. Wen L, Gao F et al 116 (19) (2014)
  173. Ward T, Sánchez A M et al 116 (6) (2014)
  174. Kabyshev A V, Konusov F V et al J. Synch. Investig. 8 1168 (2014)
  175. Dixit V K, Kumar Sh et al 104 (9) (2014)
  176. Balgos M H, Jaculbia R et al Journal Of Luminescence 155 27 (2014)
  177. Ponomarev K E, Shklyaev A A 2014 15th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM), (2014) p. 10
  178. Kolesnikov A V, Trukhanov E M et al J. Synch. Investig. 8 647 (2014)
  179. Polyakov M S, Badalyan A M et al AMR 875-877 246 (2014)
  180. Emel’yanov E A, Kokhanenko A P et al Russ Phys J 57 359 (2014)
  181. Emelyanov E A, Feklin D F et al Optoelectron.Instrument.Proc. 50 224 (2014)
  182. Geng Yu, Feng Sh et al Optical Fiber Communication Conference, (2014) p. M2G.2
  183. Polyakov M S, Badalyan A M et al Chemical Vapor Deposition 20 170 (2014)
  184. Jain N, Hudait M K 1 (3-4) (2014)
  185. Asthana P K, Ghosh B et al IEEE Trans. Electron Devices 61 479 (2014)
  186. Jiang Y, Zhang Sh et al CrystEngComm 16 8977 (2014)
  187. Yu G, Shaoqi F et al IEEE J. Select. Topics Quantum Electron. 20 36 (2014)
  188. He Yu, Wang Ju et al Asia Communications and Photonics Conference 2014, (2014) p. ATh2A.1
  189. Yu B, Fan H B et al AMR 1015 18 (2014)
  190. Zheng H, Jagannadham K Solid-State Electronics 99 41 (2014)
  191. DeMeo D, Shemelya C et al Journal Of Elec Materi 43 902 (2014)
  192. Kim S W, Cho Y D et al Journal Of Crystal Growth 401 319 (2014)
  193. Konoplev B G, Ryndin E A, Denisenko M A Tech. Phys. Lett. 39 986 (2013)
  194. Wang Ju, Deng C et al Chinese Phys. Lett. 30 116801 (2013)
  195. Emelyanov E A, Kokhanenko A P et al Russ Phys J 56 55 (2013)
  196. Shklyaev A A, Romanyuk K N, Latyshev A V JSEMAT 03 195 (2013)
  197. Frigeri C, Bietti S et al Applied Surface Science 267 86 (2013)
  198. Lee E H, Song J D et al Journal Of The Korean Vacuum Society 22 313 (2013)
  199. Burbaev T M, Gorbatsevich A A et al Bull. Lebedev Phys. Inst. 40 219 (2013)
  200. Kabyshev A V, Konusov F V, Remnev G E Russ Phys J 56 607 (2013)
  201. Wilkins M M, Boucherif A et al IEEE J. Photovoltaics 3 1125 (2013)
  202. Petrushkov M O, Putyato M A et al 2013 14th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, (2013) p. 27
  203. Bietti S, Scaccabarozzi A et al 103 (26) (2013)
  204. Buzynin Yu N, Shengurov V G et al Bull. Russ. Acad. Sci. Phys. 76 1036 (2012)
  205. Hsu Ch-W, Chen Yu-F, Su Ya-K Nanotechnology 23 495306 (2012)
  206. Hu W, Cheng B et al Thin Solid Films 520 5361 (2012)
  207. Hsu Ch-W, Chen Yu-F, Su Ya-K Nanoscale Res Lett 7 (1) (2012)
  208. Fonseka H A, Tan H H et al COMMAD 2012, (2012) p. 43
  209. Cavigli L, Bietti S et al 100 (23) (2012)
  210. Björk M T, Schmid H et al Journal Of Crystal Growth 344 31 (2012)
  211. Hsu Ch-W, Chen Yu-F, Su Ya-K ECS J. Solid State Sci. Technol. 1 P140 (2012)
  212. Biermanns A, Breuer S et al Nanotechnology 23 305703 (2012)
  213. Hu W, Cheng B et al Front. Optoelectron. 5 41 (2012)
  214. Horie Yu, Décosterd L et al Opt. Express 19 15732 (2011)
  215. Miccoli I, Prete P et al Cryst. Res. Technol. 46 795 (2011)
  216. Breuer S, Hilse M et al Journal Of Crystal Growth 323 311 (2011)
  217. Kabyshev A V, Konusov F V, Remnev G E J. Synch. Investig. 5 228 (2011)
  218. Paskiewicz D M, Tanto B et al ACS Nano 5 5814 (2011)
  219. Putyato M A, Semyagin B R et al Russ Phys J 53 906 (2011)
  220. D’Souza Sh, Haysom J et al 2011 IEEE Electrical Power and Energy Conference, (2011) p. 57
  221. Hu W, Cheng B et al 8th IEEE International Conference on Group IV Photonics, (2011) p. 314
  222. Bietti S, Somaschini C et al Nanoscale Res Lett 5 1905 (2010)
  223. Badalyan A M, Bakhturova L F et al Tech. Phys. Lett. 36 265 (2010)
  224. Breuer S, Hilse M et al Phys. Rev. B 82 (7) (2010)
  225. Yoon J, Jo S et al Nature 465 329 (2010)
  226. Kang J H, Gao Q et al Nanotechnology 21 035604 (2010)
  227. Putuato M A, Bolkhovityanov Yu B et al Semiconductors 43 1235 (2009)
© 1918–2025 Uspekhi Fizicheskikh Nauk
Email: ufn@ufn.ru Editorial office contacts About the journal Terms and conditions