The current status of studies and new trends in obtaining and exploring surface characteristics of III-nitride semiconductors are analyzed and reviewed. Using a unique setup combining a scanning tunneling microscope (STM) with an inline molecular-beam epitaxy (MBE) chamber, the surface atomic structures on both hexagonal and cubic GaN films grown by nitrogen-plasma-assisted MBE have been studied in situ over a broad range of temperatures and [N]/[Ga] ratios.
Models of the observed surface phases are developed based on the comparative analysis of their atomic-resolution STM images and ab initio total energy calculations.
PACS:61.14.Hg, 71.15.Nc, 81.05.Ea (all) DOI:10.1070/PU2004v047n04ABEH001643 URL: https://ufn.ru/en/articles/2004/4/d/ Citation: Bakhtizin R Z, Xue Q-Zh, Xue Q-K, Wu K-H, Sakurai T "Scanning tunneling microscopy studies of III-nitride thin film heteroepitaxial growth" Phys. Usp.47 371–391 (2004)