RSS feeds
РусскийEnglish
Issue 11, 2025
Volume year page
Issues Authors PACS Subscription For authors

Issues

 / 

2005

 / 

July

←  →



Nanosecond semiconductor diodes for pulsed power switching

 a,  b
a Ioffe Institute, ul. Polytekhnicheskaya 26, St. Petersburg, 194021, Russian Federation
b Lebedev Physical Institute, Russian Academy of Sciences, Leninsky prosp. 53, Moscow, 119991, Russian Federation

The development of semiconductor-based nano- and subnanosecond high current breakers is crucial for advancing modern research in experimental physics and radioelectronics, particularly with increasing power (to 1010 W) and repetition rate (to 104 Hz) of impulse devices. Highlighted in this review are two types of silicon diodes: drift step recovery diodes (DSRDs) and SOS diodes with the attainable current densities and switched-off powers being 102 A cm-2 and 108 W in the former case, and 105 A cm-2 and 1010 W in the latter. The possibility of utilizing not only monocrystalline silicon (as in DSRDs and SOS diodes) for the base material but also monocrystalline silicon carbide is examined.

Fulltext pdf (277 KB)
Fulltext is also available at DOI: 10.1070/PU2005v048n07ABEH002471
PACS: 84.70.+p, 85.30.−z, 85.30.Kk (all)
DOI: 10.1070/PU2005v048n07ABEH002471
URL: https://ufn.ru/en/articles/2005/7/c/
000233309400003
2005PhyU...48..703G
Citation: Grekhov I V, Mesyats G A "Nanosecond semiconductor diodes for pulsed power switching" Phys. Usp. 48 703–712 (2005)
BibTexBibNote ® (generic)BibNote ® (RIS)MedlineRefWorks

Оригинал: Грехов И В, Месяц Г А «Полупроводниковые наносекундные диоды для размыкания больших токов» УФН 175 735–744 (2005); DOI: 10.3367/UFNr.0175.200507c.0735

References (28) Cited by (80) ↓

  1. Lowery S, Halterman E et al 2025 IEEE Electric Ship Technologies Symposium (ESTS), (2025) p. 199
  2. Gonzalez N E, Cooper J, Lehr Ja Eng 6 (7) 144 (2025)
  3. Pei Ya, Boudikian D 2025 International Symposium on Electromagnetic Compatibility – EMC Europe, (2025) p. 1086
  4. Shahriari E, Gusev A I et al IEEE Trans. Plasma Sci. 53 (7) 1583 (2025)
  5. Chapin C A, Shao Q et al IEEE Trans. Electron Devices 72 (10) 5496 (2025)
  6. Graves D Z, Lehmann M et al 2024 IEEE International Power Modulator and High Voltage Conference (IPMHVC), (2024) p. 1
  7. Bancheri Ju, Currell A et al Nuclear Instruments And Methods In Physics Research Section A: Accelerators, Spectrometers, Detectors And Associated Equipment 1069 169935 (2024)
  8. Lin M, Li H et al IEEE Trans. Instrum. Meas. 73 1 (2024)
  9. Kesar A S, Raizman A et al IEEE Trans. Plasma Sci. 52 (11) 5385 (2024)
  10. Guo J, Chen Ya et al Electronics 13 (11) 2152 (2024)
  11. Graves D Z, Bilbao A V et al 2023 IEEE Pulsed Power Conference (PPC), (2023) p. 1
  12. Kesar A S, Wolf M et al IEEE Trans. Plasma Sci. 51 (4) 1133 (2023)
  13. Gusev A I, Lavrinovich I et al IEEE Trans. Plasma Sci. 51 (10) 2858 (2023)
  14. Huiskamp T, van Heesch E J M, Pemen A J M Pulsed Discharge Plasmas Springer Series In Plasma Science And Technology Chapter 1 (2023) p. 3
  15. Garnov S V, Selemir V D et al Dokl. Phys. 68 (3) 67 (2023)
  16. Lyublinsky A G, Kardo-Sysoev A F et al IEEE Trans. Power Electron. 37 (6) 6271 (2022)
  17. Yuan Q, Deng Z et al Review of Scientific Instruments 93 (5) (2022)
  18. Bukin V V, Dolmatov T V et al Tech. Phys. Lett. 48 (10) 283 (2022)
  19. Huang X, Liang L Lecture Notes In Electrical Engineering Vol. Conference Proceedings of 2021 International Joint Conference on Energy, Electrical and Power EngineeringA DSRD-Based Trigger Circuit for RBDT899 Chapter 2 (2022) p. 11
  20. Yang Z, Liang L, Yan X IEEE Trans. Plasma Sci. 50 (5) 1276 (2022)
  21. Degnon M R, Gusev A I et al IEEE Trans. Plasma Sci. 50 (10) 3384 (2022)
  22. Jiang S, Wang Z et al IEEE Trans. Plasma Sci. 50 (2) 374 (2022)
  23. Rozhkov A V Instrum Exp Tech 64 (5) 680 (2021)
  24. Bobreshov A M, Zhabin A S et al IEEE Microw. Wireless Compon. Lett. 31 (2) 204 (2021)
  25. Grover H S, Dawson F IEEE Trans. Plasma Sci. 49 (12) 3907 (2021)
  26. Fang X, Song H et al Review of Scientific Instruments 92 (8) (2021)
  27. Huiskamp T Plasma Sources Sci. Technol. 29 (2) 023002 (2020)
  28. Yang J, Xie Ya et al IEEE Lett. On Electromagn. Compat. Pract. And Appl. 2 (4) 142 (2020)
  29. Wang Gan-ping, Li F et al 2020 IEEE International Conference on High Voltage Engineering and Application (ICHVE), (2020) p. 1
  30. Azizi M, van Oorschot J J, Huiskamp T IEEE Trans. Plasma Sci. 48 (12) 4262 (2020)
  31. Korotkov S V, Aristov Yu V, Zhmodikov A L Instrum Exp Tech 63 (1) 53 (2020)
  32. Kladukhin V, Kladukhin S, Khramtsov S 2020 7th International Congress on Energy Fluxes and Radiation Effects (EFRE), (2020) p. 286
  33. Kyuregyan A S Semiconductors 53 (7) 969 (2019)
  34. Korotkov S V, Smorodinov V V et al IOP Conf. Ser.: Mater. Sci. Eng. 643 (1) 012081 (2019)
  35. Lebedev A A, Ivanov P A et al Phys.-Usp. 62 (8) 754 (2019)
  36. Kyuregyan A S Semiconductors 53 (7) 962 (2019)
  37. Gorbatyuk A V, Ivanov B V Semiconductors 53 (4) 524 (2019)
  38. Bokhan P A, Gugin P P et al J. Phys. D: Appl. Phys. 51 (36) 364001 (2018)
  39. Smirnov A A, Shevchenko S A J. Phys.: Conf. Ser. 993 012033 (2018)
  40. Gorbatyuk A V, Ivanov B V Tech. Phys. Lett. 44 (12) 1241 (2018)
  41. Ivanov P A, Grekhov I V Tech. Phys. 63 (1) 86 (2018)
  42. Samizadeh N M, Hashemi S M-A, Farzaneh F IEEE Trans. Plasma Sci. 46 (2) 427 (2018)
  43. Poklonski N A, Vyrko S A, Dzeraviaha A N Semiconductors 52 (6) 692 (2018)
  44. Kyuregyan A S Semiconductors 52 (3) 341 (2018)
  45. Ivanov P A, Kon’kov O I et al Tech. Phys. Lett. 44 (2) 87 (2018)
  46. Ivanov B V, Smirnov A A et al 2017 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (EIConRus), (2017) p. 291
  47. Sharabani Ya, Shafir I et al IEEE Electron Device Lett. 37 (8) 1041 (2016)
  48. Ivanov P A, Grekhov I V Tech. Phys. 61 (2) 240 (2016)
  49. Bokhan P A, Gugin P P et al J. Phys. D: Appl. Phys. 49 (24) 245202 (2016)
  50. Kesar A S, Sharabani Ya et al IEEE Trans. Plasma Sci. 44 (10) 2424 (2016)
  51. Afanasyev A V, Ivanov B V et al J. Phys.: Conf. Ser. 741 012175 (2016)
  52. Ivanov B V, Smirnov A A et al 2016 57th International Scientific Conference on Power and Electrical Engineering of Riga Technical University (RTUCON), (2016) p. 1
  53. Bokhan P A, Gugin P P et al Tech. Phys. Lett. 42 (5) 451 (2016)
  54. Grekhov I V, Rozhkov A V Instrum Exp Tech 59 (1) 82 (2016)
  55. Sharabani Y, Rosenwaks Y, Eger D Phys. Rev. Applied 4 (1) (2015)
  56. Ivanov P A, Grekhov I V Tech. Phys. 60 (6) 897 (2015)
  57. Bokhan P A, Gugin P P et al Physics of Plasmas 22 (6) (2015)
  58. Gusev A I, Pedos M S et al Review of Scientific Instruments 86 (11) (2015)
  59. Ivanov P A, Kon’kov O I et al Semiconductors 49 (11) 1511 (2015)
  60. Bokhan P A, Gugin P P et al Tech. Phys. 60 (10) 1464 (2015)
  61. Korotkov S V, Voronkov V B, Aristov Yu V Instrum Exp Tech 58 (4) 488 (2015)
  62. Grekhov I V, Lyublinskii A G, Smirnova I A Tech. Phys. 60 (11) 1677 (2015)
  63. Driessen A B J M, van Heesch E J M et al IEEE Trans. Plasma Sci. 42 (10) 3083 (2014)
  64. Lyubutin S K, Rukin S N et al Semiconductors 47 (5) 670 (2013)
  65. Bokhan P A, Gugin P P et al Physics of Plasmas 20 (3) (2013)
  66. Wang G, Su J et al Review of Scientific Instruments 84 (12) (2013)
  67. Lyublinsky A G, Korotkov S V et al IEEE Trans. Plasma Sci. 41 (10) 2625 (2013)
  68. Kesar A S, Sharabani Ya et al IEEE Trans. Plasma Sci. 40 (11) 3100 (2012)
  69. Lyubutin S K, Rukin S N et al Semiconductors 46 (4) 519 (2012)
  70. Ivanov P A, Grekhov I V Semiconductors 46 (4) 528 (2012)
  71. Lyubutin S, Pedos M et al IEEE Trans. Dielect. Electr. Insul. 18 (4) 1221 (2011)
  72. Vasil’ev P V, Lyubutin S K et al Instrum Exp Tech 54 (1) 54 (2011)
  73. Grekhov I V IEEE Trans. Plasma Sci. 38 (5) 1118 (2010)
  74. Grekhov I V, Kostina L S, Rozhkov A V Tech. Phys. Lett. 36 (10) 926 (2010)
  75. Gupta S, Farmer J et al J. Mater. Res. 25 (3) 444 (2010)
  76. Rukin S N, Tsyranov S N Tech. Phys. 54 (11) 1591 (2009)
  77. Vasiliev P V, Lyubutin S K et al Semiconductors 43 (7) 953 (2009)
  78. Gupta S, Muralikiran M et al J. Mater. Res. 24 (4) 1498 (2009)
  79. Rukin S N, Tsyranov S N Semiconductors 43 (7) 957 (2009)
  80. Gupta S, Dudipala A et al Journal of Applied Physics 104 (7) (2008)
© 1918–2025 Uspekhi Fizicheskikh Nauk
Email: ufn@ufn.ru Editorial office contacts About the journal Terms and conditions