The development of semiconductor-based nano- and subnanosecond high current breakers is crucial for advancing modern research in experimental physics and radioelectronics, particularly with increasing power (to 10¹⁰ W) and repetition rate (to 10⁴ Hz) of impulse devices. Highlighted in this review are two types of silicon diodes: drift step recovery diodes (DSRDs) and SOS diodes with the attainable current densities and switched-off powers being 10² A cm^-2 and 10⁸ W in the former case, and 10⁵ A cm^-2 and 10¹⁰ W in the latter. The possibility of utilizing not only monocrystalline silicon (as in DSRDs and SOS diodes) for the base material but also monocrystalline silicon carbide is examined.

PACS: 84.70.+p, 85.30.−z, 85.30.Kk (all) DOI: 10.1070/PU2005v048n07ABEH002471 URL: https://ufn.ru/en/articles/2005/7/c/ 000233309400003 2005PhyU...48..703G Citation: Grekhov I V, Mesyats G A "Nanosecond semiconductor diodes for pulsed power switching" Phys. Usp. 48 703–712 (2005) BibTexBibNote ® (generic)BibNote ® (RIS) MedlineRefWorks PT Journal Article TI Nanosecond semiconductor diodes for pulsed power switching AU Grekhov I V FAU Grekhov IV AU Mesyats G A FAU Mesyats GA DP 10 Jul, 2005 TA Phys. Usp. VI 48 IP 7 PG 703-712 RX 10.1070/PU2005v048n07ABEH002471 URL https://ufn.ru/en/articles/2005/7/c/ SO Phys. Usp. 2005 Jul 10;48(7):703-712 Оригинал: Грехов И В, Месяц Г А «Полупроводниковые наносекундные диоды для размыкания больших токов» УФН 175 735–744 (2005); DOI: 10.3367/UFNr.0175.200507c.0735