Nanosecond semiconductor diodes for pulsed power switching

I.V. Grekhov^a, G.A. Mesyats^b
^aIoffe Institute, ul. Polytekhnicheskaya 26, St. Petersburg, 194021, Russian Federation
^bLebedev Physical Institute, Russian Academy of Sciences, Leninsky prosp. 53, Moscow, 119991, Russian Federation

The development of semiconductor-based nano- and subnanosecond high current breakers is crucial for advancing modern research in experimental physics and radioelectronics, particularly with increasing power (to 10¹⁰ W) and repetition rate (to 10⁴ Hz) of impulse devices. Highlighted in this review are two types of silicon diodes: drift step recovery diodes (DSRDs) and SOS diodes with the attainable current densities and switched-off powers being 10² A cm^-2 and 10⁸ W in the former case, and 10⁵ A cm^-2 and 10¹⁰ W in the latter. The possibility of utilizing not only monocrystalline silicon (as in DSRDs and SOS diodes) for the base material but also monocrystalline silicon carbide is examined.

PACS: 84.70.+p, 85.30.−z, 85.30.Kk (all)
DOI: 10.1070/PU2005v048n07ABEH002471
URL: https://ufn.ru/en/articles/2005/7/c/
Web of Science

000233309400003
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2005PhyU...48..703G
Citation: Grekhov I V, Mesyats G A "Nanosecond semiconductor diodes for pulsed power switching" Phys. Usp. 48 703–712 (2005)

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@article{Grekhov:2005,
	author = {I. V. Grekhov and G. A. Mesyats},
	title = {Nanosecond semiconductor diodes for pulsed power switching},
	publisher = {Physics-Uspekhi},
	year = {2005},
	journal = {Phys. Usp.},
	volume = {48},
	number = {7},
	pages = {703-712},
	url = {https://ufn.ru/en/articles/2005/7/c/},
	doi = {10.1070/PU2005v048n07ABEH002471}
}

Оригинал: Грехов И В, Месяц Г А «Полупроводниковые наносекундные диоды для размыкания больших токов» УФН 175 735–744 (2005); DOI: 10.3367/UFNr.0175.200507c.0735