 |
RSS feeds |
|
|||||
| Issue 12, 2024 |
|
||||||
|
|
|
||||||
Issues/1998/July |
← → |
| Conferences and symposia |
Coulomb gap and metal-insulator transitions in doped semiconductors
Ioffe Institute, ul. Polytekhnicheskaya 26, St. Petersburg, 194021, Russian Federation
|
PACS: 71.30.+h
DOI: URL: https://ufn.ru/en/articles/1998/7/g/  000075638400007 Citation: Zabrodskii A G "Coulomb gap and metal-insulator transitions in doped semiconductors" Phys. Usp. 41 722–726 (1998) Оригинал: Забродский А Г «Кулоновская щель и фазовый переход металл-изолятор в легированных полупроводниках» УФН 168 804–808 (1998); |
|
© 1918–2024 Uspekhi Fizicheskikh Nauk Email: ufn@ufn.ru Editorial office contacts About the journal Terms and conditions |