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Coulomb gap and metal-insulator transitions in doped semiconductors


Ioffe Institute, ul. Polytekhnicheskaya 26, St. Petersburg, 194021, Russian Federation
PACS: 71.30.+h
DOI: 10.1070/PU1998v041n07ABEH000422
URL: https://ufn.ru/en/articles/1998/7/g/
Citation: Zabrodskii A G "Coulomb gap and metal-insulator transitions in doped semiconductors" Phys. Usp. 41 722–726 (1998)
BibTexBibNote ® (generic)BibNote ® (RIS)Medline RefWorks
RT Journal
T1 Coulomb gap and metal–insulator transitions in doped semiconductors
A1 Zabrodskii,A.G.
PB Physics-Uspekhi
PY 1998
FD 10 Jul, 1998
JF Physics-Uspekhi
JO Phys. Usp.
VO 41
IS 7
SP 722-726
DO 10.1070/PU1998v041n07ABEH000422
LK https://ufn.ru/en/articles/1998/7/g/

Оригинал: Забродский А Г «Кулоновская щель и фазовый переход металл-изолятор в легированных полупроводниках» УФН 168 804–808 (1998); DOI: 10.3367/UFNr.0168.199807h.0804

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