Coulomb gap and metal–insulator transitions in doped semiconductors

Issues

A.G. Zabrodskii
Ioffe Institute, ul. Polytekhnicheskaya 26, St. Petersburg, 194021, Russian Federation

PACS: 71.30.+h
DOI: 10.1070/PU1998v041n07ABEH000422
URL: https://ufn.ru/en/articles/1998/7/g/
Web of Science

000075638400007
Citation: Zabrodskii A G "Coulomb gap and metal-insulator transitions in doped semiconductors" Phys. Usp. 41 722–726 (1998)

References (18) Cited by (14) ↓ Similar articles (20)

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Fedotov A K, Svito I A et al Semiconductors 49 (6) 705 (2015)
Lu Ch, Quindeau A et al Applied Physics Letters 105 (8) (2014)
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González J C, Ribeiro G M et al J. Phys. D: Appl. Phys. 46 (15) 155107 (2013)
Petrov P V, Ivánov Yu L et al Solid State Communications 152 (24) 2185 (2012)
Harutyunyan S L J. Contemp. Phys. 44 (1) 19 (2009)
Harutyunyan S L J. Contemp. Phys. 44 (2) 99 (2009)
Haroutunian S L Phys. Solid State 47 (4) 604 (2005)
Yakimov A I, Nenashev A V et al Jetp Lett. 78 (4) 241 (2003)
Veinger A I, Zabrodskii A G, Tisnek T V Semiconductors 36 (7) 772 (2002)
Poklonskii N A, Lopatin S Yu, Zabrodskii A G Phys. Solid State 42 (3) 441 (2000)