Coulomb gap and metal-insulator transitions in doped semiconductors
A.G. Zabrodskii Ioffe Institute, ul. Polytekhnicheskaya 26, St. Petersburg, 194021, Russian Federation
PACS:71.30.+h DOI:10.1070/PU1998v041n07ABEH000422 URL: https://ufn.ru/en/articles/1998/7/g/ 000075638400007 Citation: Zabrodskii A G "Coulomb gap and metal-insulator transitions in doped semiconductors" Phys. Usp.41 722–726 (1998)
PT Journal Article
TI Coulomb gap and metalinsulator transitions in doped semiconductors
AU Zabrodskii A G
FAU Zabrodskii AG
DP 10 Jul, 1998
TA Phys. Usp.
VI 41
IP 7
PG 722-726
RX 10.1070/PU1998v041n07ABEH000422
URL https://ufn.ru/en/articles/1998/7/g/
SO Phys. Usp. 1998 Jul 10;41(7):722-726