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Coulomb gap and metal-insulator transitions in doped semiconductors


Ioffe Institute, ul. Polytekhnicheskaya 26, St. Petersburg, 194021, Russian Federation
Fulltext pdf (191 KB)
Fulltext is also available at DOI: 10.1070/PU1998v041n07ABEH000422
PACS: 71.30.+h
DOI: 10.1070/PU1998v041n07ABEH000422
URL: https://ufn.ru/en/articles/1998/7/g/
000075638400007
Citation: Zabrodskii A G "Coulomb gap and metal-insulator transitions in doped semiconductors" Phys. Usp. 41 722–726 (1998)
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Оригинал: Забродский А Г «Кулоновская щель и фазовый переход металл-изолятор в легированных полупроводниках» УФН 168 804–808 (1998); DOI: 10.3367/UFNr.0168.199807h.0804

References (18) ↓ Cited by (14) Similar articles (20)

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  12. . Ortuno M et al., in Proc. 22nd Int. Conf. Phys. Semicond. (Vancouver, 1994), p. 41
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  14. . Zabrodskii A G, Andreev A G, in Proc. 22nd Int. Conf. Phys. Semicond. (Vancouver, 1994) p. 2681
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  18. . Zabrodskii A G, Andreev A G, Egorov S V Phys. Status Solidi B 205 381 (1998)
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