Charged dislocations in semiconductor crystals

V.B. Shikin^a, Yu.V. Shikina^b
^aOsipyan Institute of Solid State Physics, Russian Academy of Sciences, Akademika Osip'yana str. 2, Chernogolovka, Moscow Region, 142432, Russian Federation
^bInstitute of Problems of Microelectronic Technology, Russian Academy of Sciences, Moscow region, Chernogolovka, Russian Federation

The current status of the subject of charged dislocations in germanium and silicon semiconductor crystals is discussed. Equilibrium properties of plastically deformed germanium and silicon are described by a phenomenological model of the electron spectrum of charged dislocations in these crystals. This model is a development of the Shockley-Read theory and it postulates two acceptor levels, E₁ and E₂ and also one donor level, ε₁. Moreover, it is necessary to introduce a finite capacity C₁ of the acceptor level E₁. The adopted model provides a self-consistent description of the main electrical properties of plastically deformed germanium and silicon. These properties include the conductivity of the crystals in the n and p states, details of inversion of the type of conduction caused by dislocations, some features of the current-voltage characteristics of crystals with oriented sets of dislocations, simplest relaxation phenomena, etc. In germanium, the level E₁ is located near E₁ approx 0,1 eV above the top of the valence band and its capacity is C₁ lesssim 0.1. The corresponding parameters of silicon are E₁ approx 0,4 eV and C₁ lesssim 0.1. It is worth noting the smallness of the capacitiy C₁, which justifies inclusion of this additional parameter among the characteristics of the electron spectrum of dislocations.

PACS: 61.72.Lk, 71.55.Cn, 72.80.Cw (all)
DOI: 10.1070/PU1995v038n08ABEH000099
URL: https://ufn.ru/en/articles/1995/8/b/
Web of Science

A1995TF94900002
Citation: Shikin V B, Shikina Yu V "Charged dislocations in semiconductor crystals" Phys. Usp. 38 845–875 (1995)

BibTexBibNote ® (generic)BibNote ® (RIS)MedlineRefWorks

Оригинал: Шикин В Б, Шикина Ю В «Заряженные дислокации в полупроводниковых кристаллах» УФН 165 887–917 (1995); DOI: 10.3367/UFNr.0165.199508b.0887

References (66) Cited by (24) Similar articles (20) ↓

V.S. Vavilov “The nature and energy spectrum of radiation defects in semiconductors” 7 797–808 (1965)
V.B. Shikin “Instability and reconstruction of a charged liquid surface” 54 1203–1225 (2011)
V.B. Shikin “Mobility of charges in liquid, solid, and dense gaseous helium” 20 226–248 (1977)
A.A. Shklyaev, M. Ichikawa “Extremely dense arrays of germanium and silicon nanostructures” 51 133–161 (2008)
N.A. Tyapunina, É.P. Belozerova “Charged dislocations and properties of alkali halide crystals” 31 1060–1084 (1988)
A.I. Zhakin “Electrohydrodynamics of charged surfaces” 56 141–163 (2013)
A.I. Olemskoi, I.A. Sklyar “Evolution of the defect structure of a solid during plastic deformation” 35 (6) 455–480 (1992)
Yu.B. Bolkhovityanov, O.P. Pchelyakov, S.I. Chikichev “Silicon-germanium epilayers: physical fundamentals of growing strained and fully relaxed heterostructures” 44 655–680 (2001)
G.S. Buberman “The band structure of diamond” 14 180–196 (1971)
A.L. Suvorov “Field-ion microscopy of radiation defects in single crystals” 13 317–334 (1970)
A.M. Kosevich “Dynamical theory of dislocations” 7 837–854 (1965)
M.D. Frank-Kamenetskii, V.V. Anshelevich, A.V. Lukashin “Polyelectrolyte model of DNA” 30 317–330 (1987)
V.S. Edel’man “Levitated electrons” 23 227–244 (1980)
M.I. Shliomis “Magnetic fluids” 17 153–169 (1974)
S.G. Tikhodeev “The electron-hole liquid in a semiconductor” 28 1–30 (1985)
V.V. Kirsanov, A.N. Orlov “Computer simulation of the atomic structure of defects in metals” 27 106–133 (1984)
Yu.B. Bolkhovityanov, O.P. Pchelyakov “GaAs epitaxy on Si substrates: modern status of research and engineering” 51 437–456 (2008)
V.A. Milichko, A.S. Shalin et al “Solar photovoltaics: current state and trends” 59 727–772 (2016)
R.I. Garber, I.A. Gindin “Physics of the strength of crystalline materials” 3 41–77 (1960)
V.S. Vavilov “Radiative recombination in semiconductors” 2 455–464 (1959)

The list is formed automatically.