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1995

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Instruments and methods of investigation


Impurity ion implantation into silicon single crystals: efficiency and radiation damage

 a,  b
a Lebedev Physical Institute, Russian Academy of Sciences, Leninsky prosp. 53, Moscow, 119991, Russian Federation
b Department of Physics, Belarussian State University, prosp. F. Skoriny 4, Minsk, 220050, Belarus

The ion implantation method is analysed from the point of view of its efficiency as a technique for doping silicon with donor and acceptor impurities, for synthesising silicon-based compounds and for producing gettering layers and optoelectronic structures. The introduction, agglomeration, and annealing of radiation-produced defects in ion-implanted silicon are considered. The role of interstitial defects in radiation-related defect formation is estimated. Mechanisms of athermal migration of silicon atoms in the silicon lattice are analysed.

Text can be downloaded in Russian. English translation is available on IOP Science.
PACS: 68.55.Ln, 78.50.Ge
DOI: 10.1070/PU1995v038n03ABEH000079
URL: https://ufn.ru/en/articles/1995/3/g/
Citation: Vavilov V S, Chelyadinskii A R "Impurity ion implantation into silicon single crystals: efficiency and radiation damage" Phys. Usp. 38 333–343 (1995)
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Оригинал: Вавилов В С, Челядинский А Р «Ионная имплантация примесей в монокристаллы кремния: эффективность метода и радиационные нарушения» УФН 165 347–358 (1995); DOI: 10.3367/UFNr.0165.199503g.0347

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