Impurity ion implantation into silicon single crystals: efficiency and radiation damage

V.S. Vavilov^a, A.R. Chelyadinskii^b
^aLebedev Physical Institute, Russian Academy of Sciences, Leninsky prosp. 53, Moscow, 119991, Russian Federation
^bDepartment of Physics, Belarussian State University, prosp. F. Skoriny 4, Minsk, 220050, Belarus

The ion implantation method is analysed from the point of view of its efficiency as a technique for doping silicon with donor and acceptor impurities, for synthesising silicon-based compounds and for producing gettering layers and optoelectronic structures. The introduction, agglomeration, and annealing of radiation-produced defects in ion-implanted silicon are considered. The role of interstitial defects in radiation-related defect formation is estimated. Mechanisms of athermal migration of silicon atoms in the silicon lattice are analysed.

PACS: 68.55.Ln, 78.50.Ge
DOI: 10.1070/PU1995v038n03ABEH000079
URL: https://ufn.ru/en/articles/1995/3/g/
Web of Science

A1995QU24300007
Citation: Vavilov V S, Chelyadinskii A R "Impurity ion implantation into silicon single crystals: efficiency and radiation damage" Phys. Usp. 38 333–343 (1995)

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Оригинал: Вавилов В С, Челядинский А Р «Ионная имплантация примесей в монокристаллы кремния: эффективность метода и радиационные нарушения» УФН 165 347–358 (1995); DOI: 10.3367/UFNr.0165.199503g.0347

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