Issues

 / 

1995

 / 

March

  

Instruments and methods of investigation


Impurity ion implantation into silicon single crystals: efficiency and radiation damage

 a,  b
a Lebedev Physical Institute, Russian Academy of Sciences, Leninsky prosp. 53, Moscow, 119991, Russian Federation
b Department of Physics, Belarussian State University, prosp. F. Skoriny 4, Minsk, 220050, Belarus

The ion implantation method is analysed from the point of view of its efficiency as a technique for doping silicon with donor and acceptor impurities, for synthesising silicon-based compounds and for producing gettering layers and optoelectronic structures. The introduction, agglomeration, and annealing of radiation-produced defects in ion-implanted silicon are considered. The role of interstitial defects in radiation-related defect formation is estimated. Mechanisms of athermal migration of silicon atoms in the silicon lattice are analysed.

Fulltext pdf (621 KB)
Fulltext is also available at DOI: 10.1070/PU1995v038n03ABEH000079
PACS: 68.55.Ln, 78.50.Ge
DOI: 10.1070/PU1995v038n03ABEH000079
URL: https://ufn.ru/en/articles/1995/3/g/
A1995QU24300007
Citation: Vavilov V S, Chelyadinskii A R "Impurity ion implantation into silicon single crystals: efficiency and radiation damage" Phys. Usp. 38 333–343 (1995)
BibTexBibNote ® (generic)BibNote ® (RIS)MedlineRefWorks

Оригинал: Вавилов В С, Челядинский А Р «Ионная имплантация примесей в монокристаллы кремния: эффективность метода и радиационные нарушения» УФН 165 347–358 (1995); DOI: 10.3367/UFNr.0165.199503g.0347

References (78) Cited by (19) Similar articles (4) ↓

  1. V.S. Vavilov “Possibilities and limitations of ion implantation in diamond, and comparison with other doping methodsPhys. Usp. 37 407–411 (1994)
  2. G.V. Spivak, V.I. Petrov, M.K. Antoshin “Local cathodoluminescence and its capabilities for the study of band structure in solidsSov. Phys. Usp. 29 364–380 (1986)
  3. A.E. Ieshkin, A.B. Tolstoguzov et alGas-dynamic sources of cluster ions for basic and applied researchPhys. Usp. 65 677–705 (2022)
  4. D.A. Zolotov, V.E. Asadchikov et alNew approaches to three-dimensional dislocation reconstruction in silicon from X-ray topo-tomography dataPhys. Usp. 66 943–950 (2023)

The list is formed automatically.

© 1918–2024 Uspekhi Fizicheskikh Nauk
Email: ufn@ufn.ru Editorial office contacts About the journal Terms and conditions