Impurity ion implantation into silicon single crystals: efficiency and radiation damage

V.S. Vavilov^a, A.R. Chelyadinskii^b
^aLebedev Physical Institute, Russian Academy of Sciences, Leninsky prosp. 53, Moscow, 119991, Russian Federation
^bDepartment of Physics, Belarussian State University, prosp. F. Skoriny 4, Minsk, 220050, Belarus

The ion implantation method is analysed from the point of view of its efficiency as a technique for doping silicon with donor and acceptor impurities, for synthesising silicon-based compounds and for producing gettering layers and optoelectronic structures. The introduction, agglomeration, and annealing of radiation-produced defects in ion-implanted silicon are considered. The role of interstitial defects in radiation-related defect formation is estimated. Mechanisms of athermal migration of silicon atoms in the silicon lattice are analysed.

PACS: 68.55.Ln, 78.50.Ge
DOI: 10.1070/PU1995v038n03ABEH000079
URL: https://ufn.ru/en/articles/1995/3/g/
Web of Science

A1995QU24300007
Citation: Vavilov V S, Chelyadinskii A R "Impurity ion implantation into silicon single crystals: efficiency and radiation damage" Phys. Usp. 38 333–343 (1995)

BibTexBibNote ® (generic)BibNote ® (RIS)MedlineRefWorks

Оригинал: Вавилов В С, Челядинский А Р «Ионная имплантация примесей в монокристаллы кремния: эффективность метода и радиационные нарушения» УФН 165 347–358 (1995); DOI: 10.3367/UFNr.0165.199503g.0347

References (78) Cited by (18) Similar articles (4) ↓

V.S. Vavilov “Possibilities and limitations of ion implantation in diamond, and comparison with other doping methods” Phys. Usp. 37 407–411 (1994)
G.V. Spivak, V.I. Petrov, M.K. Antoshin “Local cathodoluminescence and its capabilities for the study of band structure in solids” Sov. Phys. Usp. 29 364–380 (1986)
A.E. Ieshkin, A.B. Tolstoguzov et al “Gas-dynamic sources of cluster ions for basic and applied research” Phys. Usp. 65 677–705 (2022)
D.A. Zolotov, V.E. Asadchikov et al “New approaches to three-dimensional dislocation reconstruction in silicon from X-ray topo-tomography data” Phys. Usp. 66 943–950 (2023)

The list is formed automatically.