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Some physical aspects of ion implantationLebedev Physical Institute, Russian Academy of Sciences, Leninsky prosp. 53, Moscow, 119991, Russian Federation Ion implantation and related processes of deposition and sputtering. -- The nonequilibrium and metastable nature of ion-implanted structures. -- Amorphous solids produced by ion implantation and planar structures that include them. -- Recrystallization of layers doped or (and) amortised by ion implantation. -- Analysis of the composition and properties of ion-implanted planar structures. -- Method of analyzing spectra of photo- and cathodoluminescence of ion-implanted layers. -- Optical methods for the study of near-surface layers of ion-implanted structures. -- Capacitive spectroscopy of energy levels. -- Limits of applicability of ion implantation as a method of controlling properties of semiconductors and other solids.
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