Some physical aspects of ion implantation

Ion implantation and related processes of deposition and sputtering. -- The nonequilibrium and metastable nature of ion-implanted structures. -- Amorphous solids produced by ion implantation and planar structures that include them. -- Recrystallization of layers doped or (and) amortised by ion implantation. -- Analysis of the composition and properties of ion-implanted planar structures. -- Method of analyzing spectra of photo- and cathodoluminescence of ion-implanted layers. -- Optical methods for the study of near-surface layers of ion-implanted structures. -- Capacitive spectroscopy of energy levels. -- Limits of applicability of ion implantation as a method of controlling properties of semiconductors and other solids.

PACS: 81.15.Cd, 68.55.Ln, 68.55.Nq, 78.55.−m, 78.60.Hk, 78.66.Jg (all)
DOI: 10.1070/PU1985v028n02ABEH003854
URL: https://ufn.ru/en/articles/1985/2/e/
Citation: Vavilov V S "Some physical aspects of ion implantation" Sov. Phys. Usp. 28 196–206 (1985)

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RT Journal
T1 Some physical aspects of ion implantation
A1 Vavilov,V.S.
PB Physics-Uspekhi
PY 1985
FD 10 Feb, 1985
JF Physics-Uspekhi
JO Phys. Usp.
VO 28
IS 2
SP 196-206
DO 10.1070/PU1985v028n02ABEH003854
LK https://ufn.ru/en/articles/1985/2/e/

Оригинал: Вавилов В С «Некоторые физические аспекты ионной имплантации» УФН 145 329–346 (1985); DOI: 10.3367/UFNr.0145.198502e.0329