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1985

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February

  

Physics of our days


Some physical aspects of ion implantation


Lebedev Physical Institute, Russian Academy of Sciences, Leninsky prosp. 53, Moscow, 119991, Russian Federation

Ion implantation and related processes of deposition and sputtering. -- The nonequilibrium and metastable nature of ion-implanted structures. -- Amorphous solids produced by ion implantation and planar structures that include them. -- Recrystallization of layers doped or (and) amortised by ion implantation. -- Analysis of the composition and properties of ion-implanted planar structures. -- Method of analyzing spectra of photo- and cathodoluminescence of ion-implanted layers. -- Optical methods for the study of near-surface layers of ion-implanted structures. -- Capacitive spectroscopy of energy levels. -- Limits of applicability of ion implantation as a method of controlling properties of semiconductors and other solids.

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Fulltext is also available at DOI: 10.1070/PU1985v028n02ABEH003854
PACS: 81.15.Cd, 68.55.Ln, 68.55.Nq, 78.55.−m, 78.60.Hk, 78.66.Jg (all)
DOI: 10.1070/PU1985v028n02ABEH003854
URL: https://ufn.ru/en/articles/1985/2/e/
Citation: Vavilov V S "Some physical aspects of ion implantation" Sov. Phys. Usp. 28 196–206 (1985)
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Оригинал: Вавилов В С «Некоторые физические аспекты ионной имплантации» УФН 145 329–346 (1985); DOI: 10.3367/UFNr.0145.198502e.0329

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