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Electronic processes in metal-silicon nitride-silicon dioxide-semiconductor (MNOS) structures

 a, ,
a Lebedev Physical Institute, Russian Academy of Sciences, Leninsky prosp. 53, Moscow, 119991, Russian Federation
Fulltext pdf (99 KB)
Fulltext is also available at DOI: 10.1070/PU1981v024n08ABEH004853
PACS: 01.10.Fv
DOI: 10.1070/PU1981v024n08ABEH004853
URL: https://ufn.ru/en/articles/1981/8/j/
Citation: Basov N G, Plotnikov A F, Seleznev V N "Electronic processes in metal-silicon nitride-silicon dioxide-semiconductor (MNOS) structures" Sov. Phys. Usp. 24 727–728 (1981)
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Оригинал: Басов Н Г, Плотников А Ф, Селезнев В Н «Электронные процессы в структурах маталл — нитрид кремния — двуокись кремния — полупроводник (МНОП)» УФН 134 747–748 (1981); DOI: 10.3367/UFNr.0134.198108k.0747

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