PT Journal Article
TI Electronic processes in metal-silicon nitride-silicon dioxide-semiconductor (MNOS) structures
AU Basov N G
FAU Basov NG
AU Plotnikov A F
FAU Plotnikov AF
AU Seleznev V N
FAU Seleznev VN
DP 10 Aug, 1981
TA Phys. Usp.
VI 24
IP 8
PG 727-728
RX 10.1070/PU1981v024n08ABEH004853
URL https://ufn.ru/en/articles/1981/8/j/
SO Phys. Usp. 1981 Aug 10;24(8):727-728