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Эпитаксия GaAs на кремниевых подложках: современное состояние исследований и разработок

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Институт физики полупроводников СО РАН, просп. Ак. Лаврентьева 13, Новосибирск, 630090, Российская Федерация

Кремний и арсенид галлия являются основными материалами современной микро- и наноэлектроники. Однако до сих пор приборы на их основе существуют раздельно на подложках Si и GaAs. Исследователи на протяжении последних более чем двадцати лет пытаются объединить эти материалы на наиболее эффективной подложке кремния. В настоящем обзоре систематизирован и обобщен достигнутый на сегодняшний день уровень понимания фундаментальных физических механизмов эпитаксиального формирования GaAs и соединений типа AIIIBV на его основе на подложках Si; представлены также основные технологические приемы, способствующие улучшению качества таких гетероструктур. Освещены достижения последних лет в изготовлении гетероструктур AIIIBV/Si приборного качества и приборов на их основе.

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English fulltext is available at DOI: 10.1070/PU2008v051n05ABEH006529
PACS: 61.72.Lk, 62.25.−g, 81.05.Cy, 81.05.Ea, 81.15.−z, 85.40.Sz (все)
DOI: 10.3367/UFNr.0178.200805b.0459
URL: https://ufn.ru/ru/articles/2008/5/b/
000259376200002
2-s2.0-51549109577
2008PhyU...51..437B
Цитата: Болховитянов Ю Б, Пчеляков О П "Эпитаксия GaAs на кремниевых подложках: современное состояние исследований и разработок" УФН 178 459–480 (2008)
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English citation: Bolkhovityanov Yu B, Pchelyakov O P “GaAs epitaxy on Si substrates: modern status of research and engineering” Phys. Usp. 51 437–456 (2008); DOI: 10.1070/PU2008v051n05ABEH006529

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