PACS numbers

81.15.−z Methods of deposition of films and coatings; film growth and epitaxy
  1. V.N. Polkovnikov, N.N. Salashchenko et alBeryllium-based multilayer X-ray opticsPhys. Usp. 63 83–95 (2020)
    07.60.−j, 07.85.Fv, 42.79.−e, 68.35.Ct, 68.35.Fx, 68.47.De, 68.55.A, 68.65.Ac, 81.15.−z (all)
  2. Yu.B. Bolkhovityanov, O.P. Pchelyakov “GaAs epitaxy on Si substrates: modern status of research and engineeringPhys. Usp. 51 437–456 (2008)
    61.72.Lk, 62.25.−g, 81.05.Cy, 81.05.Ea, 81.15.−z, 85.40.Sz (all)
  3. I. Božović “Experiments with atomically smooth thin films of cuprate superconductors: strong electron-phonon coupling and other surprisesPhys. Usp. 51 170–180 (2008)
    74.45.+c, 74.78.−w, 81.15.−z (all)
  4. G.N. Makarov “Extreme processes in clusters impacting on a solid surfacePhys. Usp. 49 117–166 (2006)
    34.50.−s, 36.40.−c, 43.25.Cb, 79.20.Rf, 81.15.−z (all)
  5. A.D. Pogrebnyak, Yu.N. Tyurin “Modification of material properties and coating deposition using plasma jetsPhys. Usp. 48 487–514 (2005)
    52.77.−j, 81.15.−z, 81.65.−b, 82.45.Bb (all)
  6. Yu.B. Bolkhovityanov, O.P. Pchelyakov, S.I. Chikichev “Silicon-germanium epilayers: physical fundamentals of growing strained and fully relaxed heterostructuresPhys. Usp. 44 655–680 (2001)
    61.72.Lk, 62.25.+g, 73.40.Kp, 81.15.−z (all)
  7. V.I. Boiko, A.N. Valyaev, A.D. Pogrebnyak “Metal modification by high-power pulsed particle beamsPhys. Usp. 42 1139–1166 (1999)
    41.75.−i, 61.80.−x, 81.15.−z, 81.40.−z (all)
  8. S.A. Kukushkin, A.V. Osipov “Thin-film condensation processesPhys. Usp. 41 983–1014 (1998)
    68.35.−p, 68.18.+p, 68.15.+e, 81.15.−z (all)
  9. V.B. Timofeev “Current state of semiconductor silicon technology and material scienceSov. Phys. Usp. 33 (6) 492–493 (1990)
    01.30.Vv, 85.40.−e, 81.10.−h, 81.15.−z (all)
  10. O.A. Pankratov “Two-dimensional systems: physics and new devicesSov. Phys. Usp. 30 754–755 (1987)
    01.30.Vv, 81.15.−z, 71.55.−i, 73.43.−f (all)
© 1918–2024 Uspekhi Fizicheskikh Nauk
Email: ufn@ufn.ru Editorial office contacts About the journal Terms and conditions